Semiconductor device and method for manufacturing the same

  • US 10,937,897 B2
  • Filed: 07/21/2017
  • Issued: 03/02/2021
  • Est. Priority Date: 07/31/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a thin film transistor comprising;

    a gate electrode;

    a gate insulating layer over the gate electrode;

    an oxide semiconductor layer over the gate insulating layer;

    a first conductive layer over the oxide semiconductor layer;

    a second conductive layer over the first conductive layer;

    a third conductive layer over the second conductive layer;

    a fourth conductive layer over the oxide semiconductor layer;

    a fifth conductive layer over the fourth conductive layer; and

    a sixth conductive layer over the fifth conductive layer; and

    an insulating layer over the oxide semiconductor layer, the insulating layer being in direct contact with a top surface of the oxide semiconductor layer,wherein a gap between the first conductive layer and the fourth conductive layer is smaller than a gap between the second conductive layer and the fifth conductive layer,wherein the gap between the first conductive layer and the fourth conductive layer is smaller than a gap between the third conductive layer and the sixth conductive layer, andwherein a top surface of a first portion of the first conductive layer is in direct contact with the second conductive layer, and each of a top surface and a side surface of each of both end portions of the first conductive layer in a channel length direction of the thin film transistor is not in direct contact with the second conductive layer.

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