Magnetic sensor circuits and systems and methods for forming magnetic sensor circuits

• US 10,996,292 B2
• Filed: 12/11/2017
• Issued: 05/04/2021
• Est. Priority Date: 12/13/2016
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Raberg, Wolfgang
• Primary Examiner(s): Schindler, David M
• Application Number:
  US15/837,736
• Publication Number:
  US 20180164387A1
• Time in Patent Office: 1,240 Days
• CPC Class Codes: G01R 33/098 comprising tunnel junctions, e.g. tunnel magnetoresistance sensors

Abstract

A sensor circuit includes a first magnetoresistor. The first magnetoresistor has a first resistance transfer function. Furthermore, the sensor circuit includes a second magnetoresistor. The second magnetoresistor has a second resistance transfer function. The second resistance transfer function is different from the first resistance transfer function. The first magnetoresistor and the second magnetoresistor are connected in series between a first supply terminal of the sensor circuit and a second supply terminal of the sensor circuit.

Claims

1. A sensor circuit, comprising:

a first magnetoresistor having a first resistance transfer function, the first magnetoresistor comprising a first magnetic free layer configured to spontaneously generate a first vortex magnetization pattern in the first magnetic free layer, and a first magnetic reference layer having a first straight reference magnetization pattern;

a second magnetoresistor having a second, different, resistance transfer function, the second magnetoresistor comprising a second magnetic free layer configured to spontaneously generate a second vortex magnetization pattern in the second magnetic free layer, and a second magnetic reference layer having a second straight reference magnetization pattern,

wherein the first magnetoresistor and the second magnetoresistor are connected, by a common node, in series between a first supply terminal and a second supply terminal of the sensor circuit, and

wherein an annihilation field strength for removing the first vortex magnetization pattern in the first magnetic free layer of the first magnetoresistor is different from an annihilation field strength for removing the second vortex magnetization pattern in the second magnetic free layer of the second magnetoresistor; and

a monitoring circuit configured to monitor a monitored voltage as a voltage difference between the common node and a reference node and configured to generate a warning signal based on the monitored voltage and a reference voltage, wherein the warning signal indicates that at least one of the first magnetoresistor and the second magnetoresistor is in saturation,

wherein the monitoring circuit is configured to generate the warning signal when the monitored voltage deviates by more than a predefined threshold amount from the reference voltage and maintain the warning signal until a signal turn-off condition is satisfied,

wherein, while the warning signal is not being generated by the monitoring circuit, the monitoring circuit is configured to continue to not generate the warning signal when the monitored voltage does not deviate by more than the predefined threshold amount from the reference voltage,

wherein, while the warning signal is being generated by the monitoring circuit, the monitoring circuit is configured to cease generating the warning signal only when the signal turn-off condition is satisfied,

wherein the monitoring circuit is configured to monitor for a discontinuous voltage jump in the monitored voltage and determine that the signal turn-off condition is satisfied only when the discontinuous voltage jump is detected,

wherein the discontinuous voltage jump is a discontinuous change in the monitored voltage from a saturation voltage value to being equal to the reference voltage without the monitored voltage being equal to any intermediate voltage between the saturation voltage value and the reference voltage,

wherein the saturation voltage value is a voltage value generated as the monitored voltage when at least one of the first magnetoresistor and the second magnetoresistor is in saturation and differs from the reference voltage by an amount greater than the predefined threshold amount,

wherein, while the warning signal is being generated by the monitoring circuit, the monitoring circuit is configured to maintain the warning signal despite the monitored voltage not deviating by more than the predefined threshold amount from the reference voltage if the discontinuous voltage jump is not detected by the monitoring circuit, and

wherein the reference voltage is 0V.

2. The sensor circuit of claim 1, wherein the first resistance transfer function and the second resistance transfer function each comprise a respective linear range and a respective saturation range, wherein respective transitions from the linear range to the saturation range of the first transfer function and the second resistance transfer function occur at different strengths of an externally imposed magnetic field.

3. The sensor circuit of claim 2, wherein, for a given variation of the externally imposed magnetic field:

a first resistance variation of the first magnetoresistor, while operating in a first linear range of the first resistance transfer function, is induced according to a first factor relative to a first base resistance of the first magnetoresistor, and

a second resistance variation of the second magnetoresistor, while operating in a second linear range of the second resistance transfer function, is induced according to a second factor relative to a second base resistance of the second magnetoresistor, wherein the first factor is the same as the second factor,

wherein the first base resistance denotes a resistance at which no externally imposed magnetic field is applied to the first magnetoresistor,

wherein the second base resistance denotes a resistance at which no externally imposed magnetic field is applied to the second magnetoresistor, and

wherein a ratio of the second base resistance to the first base resistance is substantially equal to a ratio of a sensitivity of the second resistance transfer function to a sensitivity of the first resistance transfer function, wherein the second base resistance is equal to a product of the first base resistance and a constant factor, the constant factor being different than a value of 1.

4. The sensor circuit of claim 1, wherein a dimension of the first magnetic free layer of the first magnetoresistor is different than a corresponding dimension of the second magnetic free layer of the second magnetoresistor.

5. The sensor circuit of claim 1, wherein the sensor circuit is a bridge circuit, and wherein a first branch of the bridge circuit comprises the first magnetoresistor and the second magnetoresistor.

6. The sensor circuit of claim 5, further comprising:

a second branch, the second branch comprising a third magnetoresistor having a third resistance transfer function and a fourth magnetoresistor having a fourth resistance transfer function different from the third resistance transfer function, wherein the third magnetoresistor and the fourth magnetoresistor are connected, by the reference node, in series between the first and the second supply terminal of the sensor circuit.

7. The sensor circuit of claim 1, wherein:

the monitored voltage is zero in response to the first magnetoresistor and the second magnetoresistor each operating in a respective linear range, and

the monitored voltage is non-zero in response to at least one of the first magnetoresistor and the second magnetoresistor operating in a respective saturation range.

8. The sensor circuit of claim 7, wherein the monitored voltage remains constant, at zero, while the first magnetoresistor and the second magnetoresistor each vary within the respective linear range.

9. The sensor circuit of claim 1, wherein, in response to generating the warning signal, the monitoring circuit is configured to shut off a current source that generates an externally imposed magnetic field being detected by the sensor circuit.

10. A magnetic sensor bridge circuit, comprising:

a first magnetoresistive vortex sensor element and a second magnetoresistive vortex sensor element connected in series;

a third magnetoresistive vortex sensor element and a fourth magnetoresistive vortex sensor element connected in series,

wherein the first magnetoresistive vortex sensor element and the third magnetoresistive vortex sensor element are connected to a first supply terminal of the magnetic sensor bridge circuit,

wherein the second magnetoresistive vortex sensor element and the fourth magnetoresistive vortex sensor element are connected to a second, different, supply terminal of the magnetic sensor bridge circuit,

wherein the first magnetoresistive vortex sensor element and the fourth magnetoresistive vortex sensor element have a first resistance transfer function with a first annihilation field strength for removing a vortex magnetization pattern in a magnetic free layer of the first magnetoresistive vortex sensor element and removing a vortex magnetization pattern in a magnetic free layer of the fourth magnetoresistive vortex sensor element, and

wherein the second magnetoresistive vortex sensor element and the third magnetoresistive vortex sensor element have a second resistance transfer function with a second annihilation field strength for removing a vortex magnetization pattern in a magnetic free layer of the second magnetoresistive vortex sensor element and removing a vortex magnetization pattern in a magnetic free layer of the third magnetoresistive vortex sensor element, wherein the first resistance transfer function and the second resistance transfer function are different from each other, and the first annihilation field strength and the second annihilation field strength are different from each other; and

a monitoring circuit configured to monitor a voltage between a first common terminal of the first magnetoresistive vortex sensor element and the second magnetoresistive vortex sensor element and a second common terminal of the third magnetoresistive vortex sensor element and the fourth magnetoresistive vortex sensor element, and configured to generate a warning signal based on the monitored voltage and a reference voltage, wherein the warning signal indicates that at least one of the first, the second, the third, and the fourth magnetoresistive vortex sensor element is in saturation,

wherein the monitoring circuit is configured to generate the warning signal when the monitored voltage deviates by more than a predefined threshold amount from the reference voltage and maintain the warning signal until a signal turn-off condition is satisfied,

wherein, while the warning signal is not being generated by the monitoring circuit, the monitoring circuit is configured to continue to not generate the warning signal when the monitored voltage does not deviate by more than the predefined threshold amount from the reference voltage,

wherein, while the warning signal is being generated by the monitoring circuit, the monitoring circuit is configured to cease generating the warning signal only when the signal turn-off condition is satisfied,

wherein the monitoring circuit is configured to monitor for a discontinuous voltage jump in the monitored voltage and determine that the signal turn-off condition is satisfied only when the discontinuous voltage jump is detected,

wherein the discontinuous voltage jump is a discontinuous change in the monitored voltage from a saturation voltage value to being equal to the reference voltage without the monitored voltage being equal to any intermediate voltage between the saturation voltage value and the reference voltage,

wherein the saturation voltage value is a voltage value generated as the monitored voltage when at least one of the first magnetoresistor and the second magnetoresistor is in saturation and differs from the reference voltage by an amount greater than the predefined threshold amount,

wherein, while the warning signal is being generated by the monitoring circuit, the monitoring circuit is configured to maintain the warning signal despite the monitored voltage not deviating by more than the predefined threshold amount from the reference voltage if the discontinuous voltage jump is not detected by the monitoring circuit, and

wherein the reference voltage is 0V.

11. The magnetic sensor bridge circuit of claim 10, wherein an annihilation field strength of the second resistance transfer function is at least 1.1 times larger than an annihilation field strength of the first resistance transfer function.

12. The magnetic sensor bridge circuit of claim 10, wherein a ratio of a base resistance of the second resistance transfer function to a base resistance of the first resistance transfer function corresponds to a ratio of a sensitivity of the second resistance transfer function to a sensitivity of the first resistance transfer function.

13. The magnetic sensor bridge circuit of claim 10, wherein a base resistance of the second resistance transfer function is equal to the base resistance of the first resistance transfer function.

14. The magnetic sensor bridge circuit of claim 10, wherein:

the monitored voltage is zero in response to the first magnetoresistive vortex sensor element, the second magnetoresistive vortex sensor element, the third magnetoresistive vortex sensor element, and the fourth magnetoresistive vortex sensor each operating in a respective linear range, and

the monitored voltage is non-zero in response to at least one of the first magnetoresistive vortex sensor element, the second magnetoresistive vortex sensor element, the third magnetoresistive vortex sensor element, and the fourth magnetoresistive vortex sensor operating in a respective saturation range.

15. The magnetic sensor bridge circuit of claim 10, wherein:

the warning signal indicates that at least one of the first magnetoresistive vortex sensor element, the second magnetoresistive vortex sensor element, the third magnetoresistive vortex sensor element, and the fourth magnetoresistive vortex sensor is operating in a respective saturation range, and

an absence of the warning signal indicates that the first magnetoresistive vortex sensor element, the second magnetoresistive vortex sensor element, the third magnetoresistive vortex sensor element, and the fourth magnetoresistive vortex sensor are each operating in a respective linear range.

16. The magnetic sensor bridge circuit of claim 10, wherein, in response to generating the warning signal, the monitoring circuit is configured to shut off a current source that generates an externally imposed magnetic field being detected by the magnetic sensor bridge circuit.

17. The magnetic sensor bridge circuit of claim 10, wherein the predefined threshold amount is at least 10 mV.

18. The magnetic sensor bridge circuit of claim 10, wherein:

the monitored voltage remains at the reference voltage that is independent of an externally imposed magnetic field, while the first and the fourth magnetoresistors operate in a linear range of the first resistance transfer function and while the second and the third magnetoresistors operates in a linear range of the second resistance transfer function,

the monitored voltage deviates from the reference voltage by an amount dependent on the externally imposed magnetic field, while at least one of the first or the fourth magnetoresistor operates in a saturation region of the first resistance transfer function or while at least one of the second or the third magnetoresistor operates in a saturation region of the second resistance transfer function.

19. A sensor system, comprising:

a first magnetic sensor bridge circuit comprising a first magnetoresistive vortex sensor element and a second magnetoresistive vortex sensor element connected in series and a third magnetoresistive vortex sensor element and a fourth magnetoresistive vortex sensor element connected in series, wherein the first magnetoresistive vortex sensor element and the third magnetoresistive vortex sensor element are connected to a first supply terminal of the sensor system, wherein the second magnetoresistive vortex sensor element and the fourth magnetoresistive vortex sensor element are connected to a second, different, supply terminal of the sensor system, and wherein the first magnetoresistive vortex sensor element and the fourth magnetoresistive vortex sensor element have a first resistance transfer function with a first annihilation field strength for removing a vortex magnetization pattern in a magnetic free layer of the first magnetoresistive vortex sensor element and removing a vortex magnetization pattern in a magnetic free layer of the fourth magnetoresistive vortex sensor element;

a second magnetic sensor bridge circuit located in proximity to the first magnetic sensor bridge circuit and comprising a fifth magnetoresistive vortex sensor element and a sixth magnetoresistive vortex sensor element connected in series and a seventh magnetoresistive vortex sensor element and an eighth magnetoresistive vortex sensor element connected in series, wherein the fifth magnetoresistive vortex sensor element and the seventh magnetoresistive vortex sensor element are connected to a third supply terminal of the sensor system, wherein the sixth magnetoresistive vortex sensor element and the eighth magnetoresistive vortex sensor element are connected to a fourth, different, supply terminal of the sensor system, and wherein the fifth magnetoresistive vortex sensor element and the eighth magnetoresistive vortex sensor element have a second resistance transfer function with a second annihilation field strength for removing a vortex magnetization pattern in a magnetic free layer of the fifth magnetoresistive vortex sensor element and removing a vortex magnetization pattern in a magnetic free layer of the eighth magnetoresistive vortex sensor element, wherein the first resistance transfer function and the second resistance transfer function are different from each other, and the first annihilation field strength and the second annihilation field strength are different from each other; and

a monitoring circuit configured to monitor a voltage between a first test terminal and a second test terminal of the sensor system, and configured to generate a warning signal based on the monitored voltage and a reference voltage, wherein the warning signal indicates that at least one of the first, the second, the third, the fourth, the fifth, the sixth, the seventh, and the eight magnetoresistive vortex sensor element is in saturation,

wherein the monitoring circuit is configured to generate the warning signal when the monitored voltage deviates by more than a predefined threshold amount from the reference voltage and maintain the warning signal until a signal turn-off condition is satisfied,

wherein, while the warning signal is not being generated by the monitoring circuit, the monitoring circuit is configured to continue to not generate the warning signal when the monitored voltage does not deviate by more than the predefined threshold amount from the reference voltage,

wherein, while the warning signal is being generated by the monitoring circuit, the monitoring circuit is configured to cease generating the warning signal only when the signal turn-off condition is satisfied,

wherein the monitoring circuit is configured to monitor for a discontinuous voltage jump in the monitored voltage and determine that the signal turn-off condition is satisfied only when the discontinuous voltage jump is detected,

wherein the discontinuous voltage jump is a discontinuous change in the monitored voltage from a saturation voltage value to being equal to the reference voltage without the monitored voltage being equal to any intermediate voltage between the saturation voltage value and the reference voltage,

wherein the saturation voltage value is a voltage value generated as the monitored voltage when at least one of the first magnetoresistor and the second magnetoresistor is in saturation and differs from the reference voltage by an amount greater than the predefined threshold amount,

wherein, while the warning signal is being generated by the monitoring circuit, the monitoring circuit is configured to maintain the warning signal despite the monitored voltage not deviating by more than the predefined threshold amount from the reference voltage if the discontinuous voltage jump is not detected by the monitoring circuit, and

wherein the reference voltage is 0V.

20. The sensor system of claim 19, wherein a maximal distance from any one of the first magnetoresistive vortex sensor element, second magnetoresistive vortex sensor element, third magnetoresistive vortex sensor element, or fourth magnetoresistive vortex sensor element to any one of the fifth magnetoresistive vortex sensor element, sixth magnetoresistive vortex sensor element, seventh magnetoresistive vortex sensor element, or eighth magnetoresistive vortex sensor element is smaller than 5 mm.

21. The sensor system of claim 19, wherein the sixth magnetoresistive vortex sensor element and the seventh magnetoresistive vortex sensor element have a resistance transfer function that is inverted with respect to the second resistance transfer function.

22. The sensor system of claim 19, wherein the second magnetoresistive vortex sensor element and the third magnetoresistive vortex sensor element have a resistance transfer function that is inverted with respect to the first resistance transfer function.

23. The sensor system of claim 22, wherein:

a voltage of the first test terminal corresponds to a voltage between a common terminal of the first magnetoresistive vortex sensor element and the second magnetoresistive vortex sensor element and a common terminal of the third magnetoresistive vortex sensor element and the fourth magnetoresistive vortex sensor element, and

a voltage of the second test terminal corresponds to a voltage between a common terminal of the fifth magnetoresistive vortex sensor element and the sixth magnetoresistive vortex sensor element and a common terminal of the seventh magnetoresistive vortex sensor element and the eighth magnetoresistive vortex sensor element.

24. The sensor system of claim 22, wherein a voltage between the first supply terminal and the second supply terminal is different than a voltage between the third supply terminal and the fourth supply terminal during operating the sensor system.

25. The sensor system of claim 19, wherein the second magnetoresistive vortex sensor element and the third magnetoresistive vortex sensor element have the second resistance transfer function.

26. The sensor system of claim 25, wherein the first test terminal is connected to a common terminal of the first magnetoresistive vortex sensor element and the second magnetoresistive vortex sensor element, wherein the second test terminal is connected to a common terminal of the third magnetoresistive vortex sensor element and the fourth magnetoresistive vortex sensor element.

27. The sensor system of claim 25, wherein respective reference magnetization patterns of respective magnetic reference layers of the first magnetoresistive vortex sensor element, second magnetoresistive vortex sensor element, third magnetoresistive vortex sensor element, and fourth magnetoresistive vortex sensor element are parallel with respect to each other.