Semiconductor device

  • US 11,004,983 B2
  • Filed: 01/31/2020
  • Issued: 05/11/2021
  • Est. Priority Date: 10/21/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a transistor,wherein a channel formation region of the transistor comprises an oxide semiconductor layer,wherein the oxide semiconductor layer comprises indium, gallium, and zinc, andwherein an off-state current of the transistor is 1×

    10

    12
    A or lower at a drain voltage of 6V and a gate voltage of −

    5V or −

    10V.

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