Thin film transistor, method for manufacturing the same, and semiconductor device

  • US 11,011,549 B2
  • Filed: 03/05/2020
  • Issued: 05/18/2021
  • Est. Priority Date: 02/20/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor;

    a second transistor;

    a capacitor; and

    a light-emitting element,wherein each of the first transistor and the second transistor comprises;

    a gate electrode comprising titanium and molybdenum;

    a first insulating layer;

    an oxide semiconductor layer overlapping with the gate electrode with the first insulating layer interposed therebetween;

    a source electrode electrically connected to the oxide semiconductor layer, the source electrode comprising titanium and molybdenum; and

    a drain electrode electrically connected to the oxide semiconductor layer, the drain electrode comprising titanium and molybdenum,wherein one electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the first transistor and the gate electrode of the second transistor,wherein the light-emitting element is electrically connected to one of the source electrode and the drain electrode of the second transistor, andwherein the first insulating layer includes a contact hole in a region where the first transistor, the second transistor, and the capacitor are not overlapped with each other.

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