Power converting device

• US 11,018,596 B2
• Filed: 10/04/2016
• Issued: 05/25/2021
• Est. Priority Date: 10/09/2015
• Status: Active Grant

• Current Assignee: Delta Electronics Incorporated
• Original Assignee: Delta Electronics Incorporated
• Inventors: Zeng, Jian-Hong, Xin, Xiao-Ni, Wu, Rui, Zhou, Min, Ye, Hao-Yi
• Primary Examiner(s): Smith, Courtney L
• Application Number:
  US15/285,473
• Publication Number:
  US 20170104419A1
• Time in Patent Office: 1,694 Days
• Field of Search: None
• CPC Class Codes: H01F 17/04 with magnetic core
• CPC Class Codes: H01F 2017/065 Core mounted around conductor to absorb noise, e.g. EMI filter
• CPC Class Codes: H01F 38/14 Inductive couplings for wireless supply or distribution of electric power using inductive coupling H02J50/10
• CPC Class Codes: H02M 3/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H02M 3/158 including plural semiconductor devices as final control devices for a single load
• CPC Class Codes: H02M 5/293 using semiconductor devices only
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H02M 7/537 using semiconductor devices only, e.g. single switched pulse inverters
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

A power converter device includes a power element module, a conductor, and a magnetic-conductive assembly. The power element module includes at least two electrodes and a power semiconductor unit. Voltage among these electrodes is AC voltage. The power semiconductor unit includes at least one pure die, and the pure die includes plural surfaces. The surface which occupies the most area of the pure die is the pure die surface. The conductor is coupled to the power element module. A current loop forms between the power element module and the conductor. A magnetic loop forms in the magnetic-conductive assembly. The magnetic-conductive assembly includes a chamber. The current loop passes through the chamber and intersects the magnetic loop to form inductance which the current loop needs. A part of the power element module is disposed in the chamber.

Claims

1. A power converting device, comprising:

a power element module, comprising;

at least two electrodes, wherein voltage among the at least two electrodes is AC voltage; and

a power semiconductor unit, comprising;

at least one pure die including a plurality of surfaces, wherein the surface which occupies a most area of the at least one pure die is a pure die surface;

a conductor coupled to the power element module, wherein a current loop forms between the power element module and the conductor; and

a magnetic-conductive assembly, wherein the magnetic-conductive assembly comprises a magnetic core, and a magnetic loop forms in the magnetic core of the magnetic-conductive assembly, wherein the magnetic-conductive assembly comprises;

a chamber, wherein the current loop passes through the chamber, and intersects the magnetic loop to form inductance which the current loop needs, wherein a part of the power element module is disposed in the chamber;

wherein an included angle between the pure die surface and an axis of the current loop is equal to 0 degrees in a one configuration and may be greater than 0 degrees but less than or equal to 45 degrees in another configuration.

2. The power converting device of claim 1, wherein the conductor is disposed outside the chamber, wherein the power element module is disposed to enter into the chamber with at least ⅓

of a depth of the chamber.

3. The power converting device of claim 1, wherein the power element module comprises:

a first power element module; and

a second power element module, wherein the first power element module and the second power element module are connected in series to simultaneously perform a power conversion for an input to generate an output, wherein at least one of the first power element module and the second power element module is disposed in the chamber.

4. The power converting device of claim 1, further comprising:

a carrier board, wherein the power semiconductor unit is disposed on the carrier board;

wherein the magnetic-conductive assembly comprises a first magnetic-conductive portion and a second magnetic-conductive portion, and the first magnetic-conductive portion and the second magnetic-conductive portion are combined with each other to form the chamber;

wherein the conductor is disposed on an outer surface of the magnetic-conductive assembly, and coupled to the carrier board.

5. The power converting device of claim 4, wherein the conductor comprises a first portion and a second portion, and an area of the first portion is larger than an area of the second portion;

wherein the first portion is disposed as a first pin of the power converting device, and the second portion is disposed as a second pin of the power converting device.

6. The power converting device of claim 5, wherein the first pin is connected in series with the current loop.

7. The power converting device of claim 4, wherein the first magnetic-conductive portion of the magnetic-conductive assembly is disposed above the power semiconductor unit, and the second magnetic-conductive portion of the magnetic-conductive assembly is disposed under the carrier board, wherein a contact area of the second magnetic-conductive portion and the carrier board is larger than a contact area of the first magnetic-conductive portion and the power semiconductor unit, wherein a thickness of the second magnetic-conductive portion is less than a thickness of the first magnetic-conductive portion.

8. The power converting device of claim 7, wherein the conductor is disposed in outer side of the second magnetic-conductive portion of the magnetic-conductive assembly, an area of the second magnetic-conductive portion and the conductor is larger than 50% of an area of a footprint of the power converting device.

9. The power converting device of claim 1, wherein the conductor is used to be coupled to an external system, wherein the pure die surface and a plane of a system board of the external system are parallel or vertical.

10. The power converting device of claim 4, wherein the power semiconductor unit comprises a first Driver and Metal-Oxide-Semiconductor Field-Effect Transistor (Dr. MOS), wherein the first Dr. MOS comprises at least two power semiconductor devices and at least one driving element to drive the at least two power semiconductor devices, and integrates to a package device.

11. The power converting device of claim 10, wherein the power semiconductor unit further comprises:

a second Dr. MOS connected in parallel with the first Dr. MOS, wherein the first Dr. MOS is disposed on an upper surface of the carrier board, and the second Dr. MOS is disposed on a lower surface of the carrier board.

12. The power converting device of claim 11, wherein if the power converting device is in a heavy loading condition, the first Dr. MOS and the second Dr. MOS are both turned on to simultaneously perform the power conversion for an input to generate an output;

wherein if the power converting device is in a light loading condition, the first Dr. MOS or the second Dr. MOS is turned on to perform the power conversion for the input to generate the output.

13. The power converting device of claim 10, wherein each of the at least two power semiconductor devices comprises two Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET), a coupling node between the two MOSFETs is an electrode, wherein the power converting device further comprises:

an input pin coupled to one of the two MOSFETs; and

a ground pin coupled to the other one of the two MOSFETs, wherein the ground pin, the input pin, and the electrode are sequentially arranged.

14. The power converting device of claim 13, further comprising:

a signal plate coupled to the two MOSFETs, wherein the signal plate, the ground pin, the input pin, and the electrode are sequentially arranged.

15. The power converting device of claim 10, wherein each of the at least two power semiconductor devices comprises a high-side MOSFET and a low-side MOSFET, wherein the at least one driving element, the low-side MOSFET, and the high-side MOSFET are sequentially arranged.

16. The power converting device of claim 15, wherein the high-side MOSFET and low-side MOSFET are partially overlapping arrangement in the chamber.

17. The power converting device of claim 15, wherein a coupling node between the high-side MOSFET and low-side MOSFET is an electrode, wherein the power converting device further comprises:

an input pin coupled to the high-side MOSFET; and

a ground pin coupled to the low-side MOSFET;

wherein the input pin and the ground pin are parallel arrangement, the electrode is disposed in one side of a structure which is formed by parallel arrangement of the input pin and the ground pin.

18. The power converting device of claim 10, wherein the first Dr. MOS is disposed as a rectangle, each of the at least two power semiconductor devices comprises two MOSFETs, wherein the rectangle has longer sides and shorter sides, a coupling node between two MOSFETs is an electrode, the electrode is disposed near the shorter sides, wherein the power converting device further comprises:

an input pin disposed on an upper surface of the first Dr. MOS, and

a ground pin disposed on a lower surface of the first Dr. MOS.

19. The power converting device of claim 1, wherein the power element module comprises a plurality of power semiconductor units, the power converting device comprises a plurality of conductors, and the magnetic-conductive assembly comprises a plurality of magnetic windows, wherein each of the plurality of conductors is coupled to the power semiconductor unit correspondingly, a plurality of current loops form among the power semiconductor units and the conductors, wherein a plurality of magnetic loops form in the magnetic windows, the current loops intersect the magnetic loops to form inductance which the current loops need, wherein the power semiconductor units are connected in parallel to provide one channel output or multiple channel outputs.

20. The power converting device of claim 1, wherein an average ring wall thickness of the current loop is less than a length of the current loop.