Organic photoelectronic device and image sensor

• US 11,024,675 B2
• Filed: 07/22/2019
• Issued: 06/01/2021
• Est. Priority Date: 07/03/2015
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Gae Hwang, Yun, Sung Young, Jin, Yong Wan
• Primary Examiner(s): Shamsuzzaman, Mohammed
• Application Number:
  US16/518,167
• Publication Number:
  US 20190348468A1
• Time in Patent Office: 680 Days
• CPC Class Codes: H10K 30/30 comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
• CPC Class Codes: H10K 30/81 Electrodes
• CPC Class Codes: H10K 39/32 Organic image sensors
• CPC Class Codes: H10K 85/211 Fullerenes, e.g. C60
• CPC Class Codes: H10K 85/621 Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
• CPC Class Codes: H10K 85/633 comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
• CPC Class Codes: H10K 85/636 comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
• CPC Class Codes: H10K 85/649 Aromatic compounds comprising a hetero atom
• CPC Class Codes: Y02E 10/549 Organic PV cells

Abstract

An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p₁/n₁) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p₂/n₂) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p₃/n₃) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p₁/n₁) and the second composition ratio (p₂/n₂).

Claims

1. An organic photoelectronic device, comprising:

a first electrode and a second electrode facing each other; and

a light-absorption layer between the first electrode and the second electrode, the light-absorption layer including,

a first region closest to the first electrode, the first region having a first composition ratio (p₁/n₁) of a p-type semiconductor relative to an n-type semiconductor,

a second region closest to the second electrode, the second region having a second composition ratio (p₂/n₂) of the p-type semiconductor relative to the n-type semiconductor, and

a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p₃/n₃) of the p-type semiconductor relative to the n-type semiconductor,

wherein the third composition ratio (p₃/n₃) is greater than the first composition ratio (p₁/n₁) and the second composition ratio (p₂/n₂),

an amount of the p-type semiconductor in the third region is greater than an amount of the p-type semiconductor in the first region and an amount of the p-type semiconductor in the second region, respectively.

2. The organic photoelectronic device of claim 1, wherein the first composition ratio (p₁/n₁) is the same as the second composition ratio (p₂/n₂).

3. The organic photoelectronic device of claim 1, wherein a composition ratio (p/n) of the p-type semiconductor relative to the n-type semiconductor of the light-absorption layer is discontinuously increased and then decreased along the thickness direction.

4. The organic photoelectronic device of claim 1, wherein the third composition ratio (p₃/n₃) is about 5% to 80% greater than the first composition ratio (p₁/n₁) and the second composition ratio (p₂/n₂).

5. The organic photoelectronic device of claim 1, wherein one of the p-type semiconductor and the n-type semiconductor is a light-absorbing material configured to selectively absorb a first visible light selected from light in blue wavelength region, light in green wavelength region, and light in red wavelength region, and the other of the p-type semiconductor and the n-type semiconductor is a light-absorbing material configured to absorb the first visible light and a second visible light, the second visible light being different from the first visible light and selected from light in blue wavelength region, light in green wavelength region, and light in red wavelength region.

6. The organic photoelectronic device of claim 5, wherein the first visible light is light in green wavelength region, and the second visible light is light in blue wavelength region.

7. The organic photoelectronic device of claim 5, wherein the p-type semiconductor is the light-absorbing material configured to selectively absorb the first visible light;

and the n-type semiconductor is the light-absorbing material configured to absorb the first visible light and the second visible light.

8. An image sensor comprising the organic photoelectronic device of claim 1.

9. The image sensor of claim 8, wherein

the light-absorption layer is configured to absorb light in at least one part of a visible ray wavelength region;

the visible ray wavelength region includes first visible light, second visible light, and third visible light,

each of the first visible light, the second visible light and the third visible light are different wavelength regions,

the organic photoelectronic device is configured to selectively absorb the first visible light; and

the image sensor further comprises a semiconductor substrate integrated with a plurality of first photo-sensing devices configured to sense the second visible light and a plurality of second photo-sensing devices configured to sense the third visible light.

10. The organic photoelectronic device of claim 9, wherein the first visible light is light in green wavelength region, the second visible light is light in blue wavelength region, and the third visible light is light in red wavelength region.

11. The image sensor of claim 9, wherein the plurality of first photo-sensing devices and the plurality of second photo-sensing devices are spaced apart from each other in a horizontal direction.

12. The image sensor of claim 11, further comprising:

a first color filter overlapping the plurality of first photo-sensing devices, the first color filter configured to selectively transmit the second visible light; and

a second color filter overlapping the plurality of second photo-sensing devices, the second color filter configured to selectively transmit the third visible light.

13. The image sensor of claim 9, wherein the plurality of first photo-sensing devices and the plurality of second photo-sensing devices are spaced apart from each other in a vertical direction.

14. The image sensor of claim 9, wherein

the light-absorption layer is configured to absorb light in at least one part of a visible ray wavelength region;

the visible ray wavelength region includes first visible light, second visible light, and third visible light, each of the first visible light, the second visible light and the third visible light are different wavelength regions;

the organic photoelectronic device is a first organic photoelectronic device configured to selectively absorb the first visible light;

the image sensor further comprises a second organic photoelectronic device configured to selectively absorb the second visible light and a third organic photoelectronic device configured to selectively absorb the third visible light; and

the first organic photoelectronic device, the second organic photoelectronic device, and the third organic photoelectronic device are sequentially stacked.

15. An electronic device comprising the image sensor of claim 8.

16. An organic photoelectronic device, comprising:

a first electrode and a second electrode facing each other; and

a light-absorption layer between the first electrode and the second electrode, the light-absorption layer including,

a first region closest to the first electrode, the first region having a first composition ratio (p₁/n₁) of a p-type semiconductor relative to an n-type semiconductor,

a second region closest to the second electrode, the second region having a second composition ratio (p₂/n₂) of the p-type semiconductor relative to the n-type semiconductor, and

a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p₃/n₃) of the p-type semiconductor relative to the n-type semiconductor,

wherein the first composition ratio (p₁/n₁) is the same as the second composition ratio (p₂/n₂), and

the third composition ratio (p₃/n₃) is greater than the first composition ratio (p₁/n₁) and the second composition ratio (p₂/n₂).

17. The organic photoelectronic device of claim 16, wherein an amount of the p-type semiconductor in the third region is greater than an amount of the p-type semiconductor in the first region and an amount of the p-type semiconductor in the second region, respectively.

18. The organic photoelectronic device of claim 16, wherein an amount of the n-type semiconductor in the third region is lesser than an amount of the n-type semiconductor in the first region and an amount of the n-type semiconductor in the second region, respectively.

19. An image sensor comprising the organic photoelectronic device of claim 16.

20. An electronic device comprising the image sensor of claim 19.