Direct-deposition system including standoffs for controlling substrate-mask separation

• US 11,035,033 B2
• Filed: 10/24/2018
• Issued: 06/15/2021
• Est. Priority Date: 10/24/2017
• Status: Active Grant

• Current Assignee: eMagin Corporation (Samsung Electronics Co. Ltd.)
• Original Assignee: eMagin Corporation (Samsung Electronics Co. Ltd.)
• Inventors: Donoghue, Evan P., Vazan, Fridrich, Tice, Kerry, Khayrullin, Ilyas I., Ali, Tariq, Wang, Qi, Sziklas, Laurie, Ghosh, Amalkumar P.
• Primary Examiner(s): Chen, Keath T
• Application Number:
  US16/169,678
• Publication Number:
  US 20200131617A1
• Time in Patent Office: 965 Days
• CPC Class Codes: C23C 14/042 using masks
• CPC Class Codes: C23C 14/048 using irradiation by energy or particles
• CPC Class Codes: C23C 14/34 Sputtering
• CPC Class Codes: C23C 14/542 Controlling the film thickness or evaporation rate
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/166 using selective deposition, e.g. using a mask

Abstract

The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.

Claims

1. A direct-deposition system for forming a patterned layer of a first material on a substrate by depositing the first material onto the substrate through a shadow mask, wherein the system comprises:

a first chuck for holding the substrate;

a second chuck for holding the shadow mask;

a first plurality of standoffs, each standoff of the first plurality thereof having a first height that establishes a first separation between the shadow mask and the substrate when the shadow mask and substrate are in contact; and

the shadow mask, wherein the shadow mask includes a first plurality of apertures that is arranged in an aperture pattern that includes;

(i) an array of fields, each field being standoff-free and including a two-dimensional array of apertures of the first plurality thereof; and

(ii) a plurality of lanes, each lane being aperture free;

wherein the plurality of lanes is arranged in a two-dimensional arrangement such that (1) each pair of adjacent fields of the plurality thereof is separated by a different lane of the plurality thereof and (2) each lane resides between two fields of the array thereof;

wherein the plurality of first standoffs is arranged in a two-dimensional arrangement such that at least one standoff of the first plurality thereof is affixed to the shadow mask within each lane of the plurality thereof; and

wherein each standoff of the first plurality thereof is located only on the shadow mask and is capable of being removed from contact with the substrate.

2. The system of claim 1 wherein the first material is an organic material.

3. The system of claim 2 wherein the first material is an organic material operative for emitting light.

4. The system of claim 1 further comprising a second plurality of standoffs, wherein at least one standoff of the second plurality thereof is affixed to the shadow mask at a location outside the aperture pattern.

5. The system of claim 1 further comprising an alignment system that is configured to establish the first separation by placing the first plurality of standoffs in an abutting relationship with at least one of the substrate, the first chuck, and the second chuck.

6. The system of claim 5, wherein the alignment system is further configured to establish a second separation between the shadow mask and substrate that is different than the first separation by inducing a relative motion between the shadow mask and substrate after the first separation has been established.

7. The system of claim 1 wherein the first plurality of standoffs is in direct contact with the substrate when the shadow mask and substrate are in contact.

8. The system of claim 1 wherein the substrate is standoff-free.

9. The system of claim 1 wherein each of the first plurality of standoffs is located in a lane of the plurality thereof, and wherein each lane is larger in a first spacing between adjacent apertures within each field of the plurality thereof.

10. A direct-deposition system for forming a patterned layer of a first material on a substrate by depositing the first material onto the substrate through a shadow mask, wherein the system comprises:

a first chuck for holding the substrate;

a second chuck for holding the shadow mask;

the shadow mask, wherein the shadow mask includes (1) a first plurality of standoffs, each standoff of the plurality thereof having a first height that establishes a first separation between the shadow mask and the substrate when the shadow mask and substrate are in contact and (2) a first plurality of apertures that is arranged in an aperture pattern that includes;

(i) an array of fields, each field being standoff-free and including a two-dimensional array of apertures of the first plurality thereof; and

(ii) a plurality of lanes, each lane being aperture free;

wherein the plurality of lanes is arranged in a two-dimensional arrangement such that (1) each pair of adjacent fields of the plurality thereof is separated by a different lane of the plurality thereof and (2) each lane resides between two fields of the array thereof; and

wherein the plurality of standoffs is arranged in a two-dimensional arrangement such that at least one standoff of the first plurality thereof is affixed to the shadow mask within each lane of the plurality thereof; and

an alignment system configured to establish a second separation between the shadow mask and substrate, the second separation being based on the first separation;

wherein each standoff of the first plurality thereof is located only on the shadow mask and is movable relative to the substrate.

11. The system of claim 10 wherein the second separation is equal to the first separation, and wherein the alignment system is configured to establish the first separation by placing the first plurality of standoffs in an abutting relationship with at least one of the first chuck, second chuck, and substrate.

12. The system of claim 10 wherein the second separation is greater than the first separation, and wherein the alignment system is configured to (1) establish the first separation by placing the first plurality of standoffs in an abutting relationship with at least one of the first chuck, second chuck, and substrate, and (2) establish the second separation by inducing a relative motion between the shadow mask and substrate after the first separation has been established.

13. The system of claim 10 further comprising a second plurality of standoffs, wherein at least one standoff of the second plurality thereof is affixed to the shadow mask at a location outside the aperture pattern.

14. The system of claim 10 wherein each of the first plurality of standoffs is in direct contact with the substrate when the shadow mask and substrate are in contact.

15. The system of claim 10 wherein the substrate is standoff-free.

16. The system of claim 10 wherein each of the first plurality of standoffs is located in a lane of the plurality thereof, and wherein each lane is larger in a first spacing between adjacent apertures within each field of the plurality thereof.