Plasma processing apparatus

  • US 11,037,762 B2
  • Filed: 10/31/2017
  • Issued: 06/15/2021
  • Est. Priority Date: 03/30/2009
  • Status: Active Grant
First Claim
Patent Images

1. A plasma processing apparatus in which a high frequency electrode is provided in a processing chamber to mount a target object and, when a plasma process is performed on the target object in the processing chamber, a first high frequency power is applied to a rear surface of the high frequency electrode and a surface of the high frequency electrode is exposed to plasma of a processing gas, the apparatus comprising:

  • a plasma density distribution controller that is arranged to suppress a non-uniformity of plasma density around the high frequency electrode in an azimuthal direction; and

    a power feed rod connected with a central portion of the rear surface of the high frequency electrode and configured to supply the first high frequency power to the high frequency electrode,wherein the plasma density distribution controller comprises;

    a first conductor which has first and second surfaces facing opposite directions to each other and is electrically connected with the rear surface of the high frequency electrode with respect to the first high frequency power, the first surface facing a portion of the rear surface of the high frequency electrode;

    a second conductor which includes a first connecting portion electrically connected with a portion of the second surface of the first conductor and a second connecting portion electrically connected with a conductive grounding member electrically grounded with respect to the first high frequency power; and

    a rotation unit for rotating at least one of the first conductor and the second conductor around the power feed rod in an azimuthal direction of the high frequency electrode.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×