Semiconductor devices and methods for manufacturing the same

• US 11,063,086 B2
• Filed: 05/22/2019
• Issued: 07/13/2021
• Est. Priority Date: 06/21/2018
• Status: Active Grant

• Current Assignee: InnoLux Corporation
• Original Assignee: InnoLux Corporation
• Inventors: Kuo, Shu-Ming, Shih, Jian-Jung
• Primary Examiner(s): Pham, Long
• Application Number:
  US16/419,101
• Publication Number:
  US 20190393263A1
• Time in Patent Office: 783 Days
• Field of Search: None
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A semiconductor device is provided. The semiconductor device includes a first substrate. The semiconductor device also includes a first light-emitting diode on the first substrate. The semiconductor device further includes a first insulating layer on the first substrate and adjacent to the first light-emitting diode. In addition, the semiconductor device includes an adhesive structure on the first insulating layer. The adhesive structure includes a first side facing the first light-emitting diode and a second side opposite to the first side. The semiconductor device also includes a second substrate disposed on the adhesive structure. The semiconductor device further includes an optical structure in contact with at least one of the first side and the second side.

Claims

1. A semiconductor device, comprising:

a first substrate;

a first light-emitting diode disposed on the first substrate;

a first insulating layer disposed on the first substrate and adjacent to the first light-emitting diode;

an adhesive structure disposed on the first insulating layer, comprising;

a first side facing the first light-emitting diode; and

a second side opposite to the first side;

a second substrate disposed on the adhesive structure;

an optical structure in contact with at least one of the first side and the second side,

a light conversion layer disposed between the second substrate and the second side of the adhesive structure; and

a second insulating layer disposed on the second side of the adhesive structure and adjacent to the light conversion layer.

2. The semiconductor device as claimed in claim 1, wherein the optical structure comprises at least one of an absorptive material, a metal material and a metal oxide material.

3. The semiconductor device as claimed in claim 1, further comprising:

a second light-emitting diode disposed on the first substrate, wherein the first insulating layer is disposed between the first light-emitting diode and the second light-emitting diode, the first insulating layer has a first through hole, and the optical structure is disposed in the first through hole.

4. The semiconductor device as claimed in claim 3, wherein the optical structure comprises a reflective layer and an absorptive layer, and the absorptive layer is disposed on the reflective layer.

5. The semiconductor device as claimed in claim 1, further comprising:

a second light-emitting diode disposed on the first substrate, wherein the first insulating layer is disposed between the first light-emitting diode and the second light-emitting diode, the optical structure is in contact with the first side of the adhesive structure, a distance between the optical structure and the light conversion layer is D1, a pitch between the first light-emitting diode and the second light-emitting diode is P, a width of the light conversion layer is W, and the distance D1 fits the following relation;

0.5 μ

m≤

D1≤

((P−

W)/2)−

1 μ

m.

6. The semiconductor device as claimed in claim 1, further comprising:

a second light-emitting diode disposed on the first substrate, wherein the first insulating layer is disposed between the first light-emitting diode and the second light-emitting diode, the optical structure is in contact with the second side of the adhesive structure, a distance between the optical structure and the light conversion layer is D2, a pitch between the first light-emitting diode and the second light-emitting diode is P, a width of the light conversion layer is W, and the distance D2 fits the following relation;

0.5 μ

m≤

D2≤

((P−

W)/2)−

1 μ

m.

7. The semiconductor device as claimed in claim 1, wherein the second insulating layer has a second through hole, and the optical structure is disposed in the second through hole.

8. The semiconductor device as claimed in claim 7, wherein the optical structure comprises a reflective layer and an absorptive layer, and the absorptive layer is disposed between the reflective layer and the adhesive structure.

9. A semiconductor device, comprising:

a first substrate;

a first light-emitting diode disposed on the first substrate;

a first insulating layer disposed on the first substrate and adjacent to the first light-emitting diode;

an adhesive structure disposed on the first insulating layer, comprising;

a first side facing the first light-emitting diode; and

a second side opposite to the first side;

a second substrate disposed on the adhesive structure;

an optical structure in contact with at least one of the first side and the second side; and

a light conversion layer disposed between the first light-emitting diode and the adhesive structure.

10. A method for manufacturing a semiconductor device, comprising:

providing a first substrate;

forming a first light-emitting diode on the first substrate;

forming a first insulating layer on the first substrate and adjacent to the first light-emitting diode;

forming an adhesive structure on the first insulating layer, wherein the adhesive structure comprises a first side facing the first light-emitting diode and a second side opposite to the first side;

forming a second substrate on the adhesive structure;

forming an optical structure in contact with at least one of the first side and the second side,

forming a light conversion layer between the second substrate and the second side of the adhesive structure; and

forming a second insulating layer on the second side of the adhesive structure and adjacent to the light conversion layer.

11. The method as claimed in claim 10, wherein the optical structure comprises at least one of an absorption material, a metal material and a metal oxide material.

12. The method as claimed in claim 10, further comprising:

forming a first through hole in the first insulating layer; and

forming a second light-emitting diode on the first substrate, wherein the first insulating layer is disposed between the first light-emitting diode and the second light-emitting diode, and the optical structure is disposed in the first through hole.

13. The method as claimed in claim 12, wherein the optical structure comprises a reflective layer and an absorptive layer, and the absorptive layer is disposed on the reflective layer.

14. The method as claimed in claim 10, further comprising:

forming a second light-emitting diode on the first substrate, wherein the first insulating layer is disposed between the first light-emitting diode and the second light-emitting diode, the optical structure is in contact with the first side of the adhesive structure, a distance between the optical structure and the light conversion layer is D1, a pitch between the first light-emitting diode and the second light-emitting diode is P, a width of the light conversion layer is W, and the distance D1 fits the following relation;

0.5 μ

m≤

D1≤

((P−

W)/2)−

1 μ

m.

15. The method as claimed in claim 10, further comprising:

forming a second light-emitting diode disposed on the first substrate, wherein the first insulating layer is disposed between the first light-emitting diode and the second light-emitting diode, the optical structure is in contact with the second side of the adhesive structure, a distance between the optical structure and the light conversion layer is D2, a pitch between the first light-emitting diode and the second light-emitting diode is P, a width of the light conversion layer is W, and the distance D2 fits the following relation;

0.5 μ

m≤

D2≤

((P−

W)/2)−

1 μ

m.

16. The method as claimed in claim 10, further comprising:

forming a second through hole in the second insulating layer, wherein the optical structure is disposed in the second through hole.

17. The method as claimed in claim 16, wherein the optical structure comprises a reflective layer and an absorptive layer, and the absorptive layer is disposed between the reflective layer and the adhesive structure.