Apparatus provided with a crucible including a porous baffle plate therein for manufacturing compound single crystal and method for manufacturing compound single crystal
First Claim
1. An apparatus for manufacturing compound single crystal, comprising:
- a crystal growth section having a susceptor to hold a seed crystal;
a gas supply section to supply a metal-contained gas (gas containing a metal vapor) generated from a metal source and a reactant gas, the reactant gas reacting with the metal-contained gas to form an inorganic compound, toward the seed crystal; and
a heating section having a heating unit to heat the seed crystal and the metal source,wherein the gas supply section includesa crucible disposed separately from the susceptor and holding the metal source,a carrier gas supply unit that supplies a carrier gas into the crucible, and supplies a mixed gas of the metal-contained gas and the carrier gas toward the seed crystal, anda reactant gas supply unit to supply the reactant gas toward the seed crystal,a porous baffle plate is provided in an opening of the crucible, andthe porous baffle plate satisfies Expressions (1) and (2),
80%≤
(1−
VH/VB)×
100≤
92.8%
(1)
0.0003 mm<
a2/L≤
1.0 mm
(2)whereVB is an apparent volume of the porous baffle plate,VH is a total volume of through-holes contained in the porous baffle plate,“
a”
is a diameter of the through-hole, andL is a length of the through-hole.
1 Assignment
0 Petitions
Accused Products
Abstract
An apparatus for manufacturing compound single crystal includes a crystal growth section to hold a seed crystal, a gas supply section to supply a metal-contained gas and a reactant gas toward the seed crystal, and a heating section to heat the seed crystal and a metal source. The gas supply section includes a crucible holding the metal source, a carrier gas supply unit, and a reactant gas supply unit. A porous baffle plate is provided in an opening of the crucible. The porous baffle plate satisfies a relationship of 80%≤(1−VH/VB)×100<100% and a relationship of 0.0003<a2/L<1.1. VB is an apparent volume of the porous baffle plate, VH is a total volume of the through-holes contained in the porous baffle plate, “a” is a diameter of the through-hole, and L is a length of the through-hole.
6 Citations
17 Claims
-
1. An apparatus for manufacturing compound single crystal, comprising:
-
a crystal growth section having a susceptor to hold a seed crystal; a gas supply section to supply a metal-contained gas (gas containing a metal vapor) generated from a metal source and a reactant gas, the reactant gas reacting with the metal-contained gas to form an inorganic compound, toward the seed crystal; and a heating section having a heating unit to heat the seed crystal and the metal source, wherein the gas supply section includes a crucible disposed separately from the susceptor and holding the metal source, a carrier gas supply unit that supplies a carrier gas into the crucible, and supplies a mixed gas of the metal-contained gas and the carrier gas toward the seed crystal, and a reactant gas supply unit to supply the reactant gas toward the seed crystal, a porous baffle plate is provided in an opening of the crucible, and the porous baffle plate satisfies Expressions (1) and (2),
80%≤
(1−
VH/VB)×
100≤
92.8%
(1)
0.0003 mm<
a2/L≤
1.0 mm
(2)where VB is an apparent volume of the porous baffle plate, VH is a total volume of through-holes contained in the porous baffle plate, “
a”
is a diameter of the through-hole, andL is a length of the through-hole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
-
Specification