Transistor comprising an oxide semiconductor

  • US 11,107,838 B2
  • Filed: 04/23/2019
  • Issued: 08/31/2021
  • Est. Priority Date: 11/06/2009
  • Status: Active Grant
First Claim
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1. A transistor comprising:

  • a gate electrode layer;

    a gate insulating layer;

    an oxide semiconductor layer comprising a region overlapping with the gate electrode layer with the gate insulating layer provided therebetween;

    a first insulating layer over the oxide semiconductor layer;

    a second insulating layer over the first insulating layer; and

    a source electrode layer and a drain electrode layer,wherein the oxide semiconductor layer comprises indium, gallium, and zinc,wherein a side surface of the oxide semiconductor layer is in contact with a side surface of the source electrode layer or a side surface of the drain electrode layer,wherein the source electrode layer and the drain electrode layer overlap with the gate electrode layer,wherein the oxide semiconductor layer comprises a crystal region including a nanocrystal with a particle size greater than or equal to 1 nm and less than or equal to 20 nm,wherein an end portion of the oxide semiconductor layer has a tapered shape, andwherein c-axes of crystal grains in the crystal region are oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer.

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