Semiconductor laser diode
First Claim
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1. A semiconductor laser diode comprising:
- a semiconductor body having an emitter region; and
a first connection element that electrically contacts the semiconductor body in the emitter region, the first connection element comprises a metallic layer,whereinthe semiconductor body is in contact with the first connection element in the emitter region,at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element,the structuring has a density of structures and the density of the structures increases toward a radiation exit surface,the structuring comprises a plurality of structures, andthe closer the structures are to the radiation exit surface, the smaller a distance (d) is between neighboring structures.
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Abstract
A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, and at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element.
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Citations
13 Claims
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1. A semiconductor laser diode comprising:
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a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, the first connection element comprises a metallic layer, wherein the semiconductor body is in contact with the first connection element in the emitter region, at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element, the structuring has a density of structures and the density of the structures increases toward a radiation exit surface, the structuring comprises a plurality of structures, and the closer the structures are to the radiation exit surface, the smaller a distance (d) is between neighboring structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor laser diode comprising:
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a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, the first connection element comprises a metallic layer, wherein the semiconductor body is in contact with the first connection element in the emitter region, at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element, and the structuring has a density of structures and the density of the structures increases toward a radiation exit surface.
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Specification