Method for passing photovoltaic current between a subcell formed from a group II-VI semiconductor material and a subcell formed from a group IV semiconductor material

• US 11,257,973 B2
• Filed: 07/01/2019
• Issued: 02/22/2022
• Est. Priority Date: 12/10/2009
• Status: Active Grant

• Current Assignee: Epic Technology
• Original Assignee: Epic Technology
• Inventors: Sivananthan, Sivalingam, Carmody, Michael, Bower, Robert W., Mallick, Shubhrangshu, Garland, James
• Primary Examiner(s): Bernier, Lindsey A
• Application Number:
  US16/459,296
• Publication Number:
  US 20200135955A1
• Time in Patent Office: 967 Days
• CPC Class Codes: H01L 29/267 in different semiconductor regions , e.g. heterojunctions H01L29/263 takes precedence
• CPC Class Codes: H01L 31/0687 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/0725 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/074 comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y02E 10/543 Solar cells from Group II-VI materials
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

A method for passing photovoltaic current between a subcell formed from a single crystal Group ll-VI semiconductor material and a subcell formed from a single crystal Group IV semiconductor material, includes the steps of forming a first subcell by an epitaxial growth process, the first subcell having a first upper surface; forming a tunnel heterojunction between the first subcell and the second subcell, and tunneling carriers formed by light incident on the first and second subcells through the tunnel heterojunction, thereby permitting a photoelectric series current to flow through the first and second subcells.

Claims

1. A method for passing photovoltaic current between a second subcell formed from a single crystal Group II-VI semiconductor material and a first subcell formed from a single crystal Group IV semiconductor material, comprising the steps of:

forming the first subcell by an epitaxial growth process, the first subcell having a first upper surface;

forming a tunnel heterojunction between the first subcell and the second subcell, said step of forming the tunnel heterojunction including the substeps of

forming a first layer on the first upper surface of the first subcell by an epitaxial growth process, the first layer comprising a single crystal Group IV semiconductor material, the first layer having a first conductivity type and forming one side of the tunnel heterojunction, the first layer having a second upper surface;

forming a second layer, by an epitaxial growth process on the second upper surface of the first layer, the second layer comprising a single crystal Group II-VI semiconductor material and having a second conductivity type opposite the first conductivity type, the second layer forming the other side of the tunnel heterojunction, the second layer having a third upper surface;

forming the second subcell by an epitaxial growth process on the third upper surface; and

responsive to said step of forming the heterojunction, tunneling carriers formed by light incident on the first and second subcells through the tunnel heterojunction, thereby permitting a photoelectric series current to flow through the first and second subcells.

2. The method of claim 1, wherein the first conductivity type is (n).

3. The method of claim 1, and further comprising the step of forming the first subcell to have an emitter of the first conductivity type and a base having the second conductivity type and being adjacent to the emitter.

4. The method of claim 1, and further comprising the steps of

forming the first subcell to have a base of the second conductivity type and to adjoin the first layer of the tunnel junction;

and

using the first layer of the tunnel junction to be an emitter of the first subcell.

5. The method of claim 1, and further comprising the steps of forming the first layer of the tunnel heterojunction to be comprised of a Group IV semiconductor material selected from the group consisting of silicon, silicon-germanium and strained silicon-germanium.

6. The method of claim 1, and further comprising the steps of forming the second layer of the tunnel heterojunction to be comprised of a Group II-VI semiconductor material selected from the group consisting of ZnTe, ZnS, MgTe, CdMgTe and composites thereof.

7. The method of claim 1, wherein the step of forming the second layer is further defined in that the second layer is more highly doped than an adjacent portion of the second subcell.

8. The method of claim 1, wherein the step of forming the first layer is further defined in that the first layer is more highly doped than an adjacent portion of the first subcell.

9. The method of claim 1, wherein the first conductivity type is (p).