Electrical, mechanical, computing, and/or other devices formed of extremely low resistance materials

• US 11,289,639 B2
• Filed: 05/08/2019
• Issued: 03/29/2022
• Est. Priority Date: 03/30/2011
• Status: Active Grant

• Current Assignee: Ambature
• Original Assignee: Ambature
• Inventors: Gilbert, Douglas J., Shteyn, Y. Eugene, Smith, Michael J., Hanna, Joel Patrick, Greenland, Paul, Coppa, Brian, North, Forrest
• Primary Examiner(s): Kopec, Mark
• Application Number:
  US16/407,160
• Publication Number:
  US 20190326501A1
• Time in Patent Office: 1,056 Days
• Field of Search: 505190, 505236, 505237, 505238
• CPC Class Codes: C04B 35/45 based on copper oxide or solid solutions thereof with other oxides
• CPC Class Codes: G01K 7/006 using superconductive elements
• CPC Class Codes: G01L 21/12 measuring changes in electric resistance of measuring members, e.g. of filaments; Vacuum gauges of the Pirani type
• CPC Class Codes: G01R 33/0354 SQUIDS
• CPC Class Codes: H01B 1/00 Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
• CPC Class Codes: H01F 6/06 Coils, e.g. winding, insulating, terminating or casing arrangements therefor
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 23/53285 containing superconducting materials
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/10329 Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/1461 MEMS
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H02K 3/02 : Windings characterised by the conductor material
• CPC Class Codes: H02K 55/00 : Dynamo-electric machines having windings operating at cryogenic temperatures
• CPC Class Codes: H10N 60/124 : comprising high-Tc ceramic materials
• CPC Class Codes: H10N 60/203 : comprising high-Tc ceramic materials
• CPC Class Codes: H10N 60/857 : comprising copper oxide
• CPC Class Codes: H10N 60/858 : Multi-layered structures, e.g. superlattices
• CPC Class Codes: Y02E 40/60 : Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment

Abstract

Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

Claims

1. A Josephson junction comprising:

a first ELR conductor comprising a modified ELR material;

a second ELR conductor comprising the modified ELR material; and

a barrier material disposed between the first ELR conductor and the second ELR conductor,

wherein the modified ELR material comprises a first layer of ELR material having a face and a crystalline structure, wherein the face is parallel to a b-plane of the crystalline structure, and a second layer of modifying material bonded to the face of the first layer of ELR material, wherein the modified ELR material has improved operating characteristics over those of the ELR material alone.

2. The Josephson junction of claim 1, wherein the barrier material comprises an insulating material.

3. The Josephson junction of claim 1, wherein the barrier material comprises an conductive material.

4. The Josephson junction of claim 3, wherein the barrier material comprises an conductive metal.

5. The Josephson junction of claim 1, wherein the barrier material comprises an semi-conductor material.

6. The Josephson junction of claim 1, wherein the barrier material comprises an ELR material.

7. The Josephson junction of claim 1, wherein the first ELR conductor and the second ELR conductor each comprise an ELR wire formed from the modified ELR material.

8. The Josephson junction of claim 1, wherein the first ELR conductor and the second ELR conductor each comprise an ELR nanowire formed from the modified ELR material.

9. The Josephson junction of claim 1, wherein the first ELR conductor and the second ELR conductor each comprise an ELR trace formed from the modified ELR material.

10. The Josephson junction of claim 1, wherein the modified ELR material operates in an ELR state at temperatures greater than 150.

11. A Josephson junction comprising:

a first ELR conductor comprising a modified ELR material having a critical temperature greater than 150K;

a second ELR conductor comprising the modified ELR material; and

a barrier material disposed between the first ELR conductor and the second ELR conductor,

wherein the modified ELR material comprises a first layer of ELR material having a face and a crystalline structure, wherein the face is parallel to a b-plane of the crystalline structure, and a second layer of modifying material bonded to the face of the first layer of ELR material.

12. The Josephson junction of claim 11, wherein the barrier material comprises an insulating material.

13. The Josephson junction of claim 11, wherein the barrier material comprises an conductive material.

14. The Josephson junction of claim 13, wherein the barrier material comprises an conductive metal.

15. The Josephson junction of claim 11, wherein the barrier material comprises an semi-conductor material.

16. The Josephson junction of claim 11, wherein the barrier material comprises an ELR material.

17. The Josephson junction of claim 11, wherein the first ELR conductor and the second ELR conductor each comprise an ELR wire formed from the modified ELR material.

18. The Josephson junction of claim 11, wherein the first ELR conductor and the second ELR conductor each comprise an ELR nanowire formed from the modified ELR material.

19. The Josephson junction of claim 11, wherein the first ELR conductor and the second ELR conductor each comprise an ELR trace formed from the modified ELR material.

20. A circuit comprising:

a plurality of Josephson junctions, wherein each of the plurality of Joseph junctions comprises;

a first ELR conductor comprising a modified ELR material having a critical temperature greater than 150K,

a second ELR conductor comprising the modified ELR material, and

a barrier material disposed between the first ELR conductor and the second ELR conductor,

wherein the modified ELR material comprises a first layer of ELR material having a face and a crystalline structure, wherein the face is parallel to a b-plane of the crystalline structure, and a second layer of modifying material bonded to the face of the first layer of ELR material.