CHEMICAL VAPOR DEPOSITION APPARATUS WITH LIQUID FEED

• US 20010001949A1
• Filed: 06/15/1998
• Published: 05/31/2001
• Est. Priority Date: 05/14/1993
• Status: Active Grant

• Current Assignee: Donald L. Westmoreland, Gurtej Sandhu
• Original Assignee: Donald L. Westmoreland, Gurtej Sandhu
• Inventors: SANDHU, GURTEJ S., WESTMORELAND, DONALD L.
• Granted Patent: US 6,428,623 B2
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/4485 by evaporation without using carrier gas in contact with the source material C23C16/4486 takes precedence

Abstract

The invention is a method directed to the use of a nonvolatile precursor, either a solid precursor or a liquid precursor, suitable for chemical vapor deposition (CVD), including liquid source CVD (LSCVD), of a semiconductor film. Using the method of the invention the nonvolatile precursor is dissolved in a solvent. The choice of solvent is typically an inorganic compound that has a moderate to high vapor pressure at room temperature and that can be liquified by a combination of pressure and cooling. The solution thus formed is then transported at an elevated pressure and/or a reduced temperature to the CVD chamber. In CVD the solution evaporates at a higher temperature and a lower pressure upon entry to the CVD chamber, and the nonvolatile precursor, in its gaseous state, along with a gas reactant, produces a product which is deposited as a thin film on a semiconductor wafer. In LSCVD the liquid enters the chamber, contacts the wafer, evaporates, produces a product which is deposited as a thin film on the wafer surface.

Claims

1. A method for performing a chemical vapor deposition of a film on a surface of a wafer, comprising the following steps:

a) solubilizing a nonvolatile precursor in an inorganic solvent to form a liquid solution;

b) transporting said liquid solution as a continuous liquid stream to a control chamber, said transporting performed at a temperature and a pressure to ensure a state of said nonvolatile precursor remains liquid;

c) evaporating said liquid solution in said control chamber to change said state of said nonvolatile precursor to a vapor;

d) creating a reaction between said vapor of said nonvolatile precursor and a reactant vapor; and

e) depositing the film on the surface of the wafer in response to said reaction.

2. The method as specified in

claim 1

, further comprising the step of eliminating contaminates during the depositing of the film by selecting said inorganic solvent and said nonvolatile precursor to ensure non-reaction of said inorganic solvent and said nonvolatile precursor in said solution.

3. The method as specified in

claim 1

, further comprising the following steps:

a) creating a by-product during said step of depositing; and

b) removing said by-product from said chamber.

4. The method as specified in

claim 1

, further comprising the following steps:

a) injecting said liquid solution into said control chamber; and

b) controlling the temperature and pressure of said control chamber such that the temperature is high enough and the pressure is low enough to rapidly effect said step of evaporating said liquid solution when said liquid solution enters said control chamber.

5. The method as specified in

claim 4

, further comprising the step of heating said wafer to a temperature greater than said vapor of said nonvolatile precursor thereby precipitating said step of depositing.

6. The method as specified in

claim 1

, wherein said step of evaporating comprises the steps of:

a) heating said wafer to a temperature capable of evaporating said liquid solution;

b) applying said liquid solution to the surface of the wafer; and

c) increasing a temperature of said liquid solution to said temperature capable of evaporating said liquid solution in response to said step of applying and said step of heating thereby effecting said step of evaporating.

7. The method as specified in

claim 6

, further comprising the following steps:

a) nebulizing said liquid solution at said control chamber in order to create a mist of said liquid solution prior to said step of applying; and

b) uniformly covering the surface of the wafer with said mist during said step of applying.

8. The method as specified in

claim 6

, further comprising the following steps:

a) heating the wafer to a temperature greater than a temperature of said liquid solution prior to said step of applying; and

b) controlling a temperature and a pressure of said control chamber in order to effect said step of evaporating.

9. The method as specified in

claim 1

, further comprising the step of creating said reactant vapor during said step of evaporating.

10. The method as specified in

claim 1

, further comprising the step of injecting said reactant vapor into said control chamber.

11. The method as specified in

claim 1

, wherein said nonvolatile precursor is a nonvolatile solid at a temperature at or above 1500 degrees Kelvin and at a pressure at or below 10⁻

10 Torr.

12. The method as specified in

claim 11

, wherein said nonvolatile solid is selected from the group consisting of Tiaz, ZrCl4, and biscyclopentadienyltitanium diclhoride.

13. The method as specified in

claim 1

, wherein said nonvolatile precursor is a nonvolatile liquid at a normal temperature and pressure.

14. The method as specified in

claim 13

, wherein said nonvolatile liquid is selected from the group consisting of indenyltris(dimethylamido)zirconium, cyclopentadienyltris(diethylamido)titanium, and bis(cyclopentadienyl)bis(dimethylamido)titanium.

15. The method as specified in

claim 1

, wherein said inorganic solvent is selected from the group consisting of liquid ammonia (NH₃), liquid NO₂, liquid SO₂, liquid TiCl₄, liquid TaCl₅, liquid WF₆, liquid SiCl₄, borazine, hydrazine, liquid xenonfluorides, liquid phosphine, liquid arsine, diethylzinc, BCl₃, BF₃, SF₆, H₂S, SiF₄, CBrF₃, CCl₂F₂, CCl₃F, CClF₃, CCl₄, SiH₂Cl₂.

16. The method as specified in

claim 1

, wherein said reactant vapor is selected from the group consisting of hydrogen, ammonia, and silane.

17. The method as specified in

claim 1

, wherein said step of transporting further comprises transporting said liquid solution in pulses.

18. A method for depositing a film on a surface, comprising the following steps:

a) combining a nonvolatile precursor and an inorganic solvent to form a solution;

b) adjusting a temperature and a pressure in order to maintain said solution in a liquid state;

c) transporting said solution as a liquid stream to a chamber;

d) vaporizing the solution at said chamber to form a precursor vapor;

e) creating a reaction with a reactant vapor and said precursor vapor; and

f) depositing the film on the surface in response to said step of creating.