SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

  • US 20010003379A1
  • Filed: 12/21/1998
  • Published: 06/14/2001
  • Est. Priority Date: 12/31/1997
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a semiconductor substrate;

    a plurality of conductive layers on the semiconductor substrate; and

    an insulating layer on the semiconductor substrate including the conductive layers, the insulating layer having at least one void between each adjacent conductive layer.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×