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SOI-structure MIS field-effect transistor and method of manufacturing the same

  • US 20010015461A1
  • Filed: 12/08/2000
  • Published: 08/23/2001
  • Est. Priority Date: 12/08/1999
  • Status: Active Grant
First Claim
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1. A metal insulator semiconductor (MIS) field-effect transistor of a silicon-on-insulator (SOI) structure, comprising:

  • a source region;

    a drain region;

    a body region;

    a gate electrode; and

    a PN junction portion;

    wherein the body region is interposed between the source region and the drain region;

    wherein the body region is electrically connected to the gate electrode by the PN junction portion; and

    wherein the PN junction portion is disposed in such a manner that when a voltage is applied to the gate electrode, a reverse voltage is applied to the PN junction portion.

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