Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures

• US 20010020546A1
• Filed: 12/21/2000
• Published: 09/13/2001
• Est. Priority Date: 11/16/1993
• Status: Active Grant

• Current Assignee: FormFactor Incorporated
• Original Assignee: FormFactor Incorporated
• Inventors: Eldridge, Benjamin N., Grube, Gary W., Mathieu, Gaetan L., Khandros, Igor Y.
• Granted Patent: US 6,835,898 B2
• Time in Patent Office: Days
• US Class Current: 174/261
• CPC Class Codes: B23K 20/004 Wire welding
• CPC Class Codes: B23K 2101/40 Semiconductor devices
• CPC Class Codes: C23C 18/31 Coating with metals
• CPC Class Codes: C23C 18/32 Coating with nickel, cobalt or mixtures thereof with phosphorus or boron C23C18/50 takes precedence
• CPC Class Codes: C23C 18/38 Coating with copper
• CPC Class Codes: C25D 21/02 Heating or cooling
• CPC Class Codes: C25D 5/12 at least one layer being of nickel or chromium
• CPC Class Codes: C25D 5/16 Electroplating with layers of varying thickness
• CPC Class Codes: C25D 5/605 Surface topography of the layers, e.g. rough, dendritic or nodular layers
• CPC Class Codes: C25D 7/0607 Wires
• CPC Class Codes: G01R 1/0483 Sockets for un-leaded IC's having matrix type contact fields, e.g. BGA or PGA devices; Sockets for unpackaged, naked chips for IC's with connecting points around the edges only G01R1/0433
• CPC Class Codes: G01R 1/06711 Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
• CPC Class Codes: G01R 1/07314 the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support on an elastic support, e.g. a film, G01R1/0735
• CPC Class Codes: G01R 1/07342 the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
• CPC Class Codes: G01R 1/07357 with flexible bodies, e.g. buckling beams
• CPC Class Codes: G01R 1/07378 using an intermediate adapter, e.g. space transformers G01R1/07371 takes precedence
• CPC Class Codes: G01R 31/2884 using dedicated test connectors, test elements or test circuits on the IC under test G01R31/2855 takes precedence
• CPC Class Codes: G01R 31/2886 Features relating to contacting the IC under test, e.g. probe heads; chucks G01R31/2865 takes precedence, test connections, e.g. test sockets, or probes per se, G01R1/04 or G01R1/06
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 21/4889 Connection or disconnection of other leads to or from wire-like parts, e.g. wires
• CPC Class Codes: H01L 21/563 : Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 21/6715 : Apparatus for applying a liquid, a resin, an ink or the like H01L21/67126 takes precedence
• CPC Class Codes: H01L 21/67248 : Temperature monitoring
• CPC Class Codes: H01L 21/67253 : Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: H01L 21/67288 : Monitoring of warpage, curvature, damage, defects or the like
• CPC Class Codes: H01L 22/20 : Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
• CPC Class Codes: H01L 2224/05568 : the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05571 : the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05572 : the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05573 : Single external layer
• CPC Class Codes: H01L 2224/1134 : Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/13082 : Two-layer arrangements
• CPC Class Codes: H01L 2224/13099 : Material
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• CPC Class Codes: H01L 2224/13647 : Copper [Cu] as principal constituent
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• CPC Class Codes: H01L 2224/16145 : the bodies being stacked
• CPC Class Codes: H01L 2224/45014 : Ribbon connectors, e.g. rectangular cross-section
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• CPC Class Codes: H01L 2224/45565 : Single coating layer
• CPC Class Codes: H01L 2224/4569 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/48 : of an individual wire connector
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• CPC Class Codes: H01L 2224/48227 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48599 : Principal constituent of the connecting portion of the wire connector being Gold (Au)
• CPC Class Codes: H01L 2224/49109 : outside the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73203 : Bump and layer connectors
• CPC Class Codes: H01L 2224/78301 : Capillary
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2224/85043 : using a flame torch, e.g. hydrogen torch
• CPC Class Codes: H01L 2224/85045 : using a corona discharge, e.g. electronic flame off [EFO]
• CPC Class Codes: H01L 2224/851 : the connector being supplied to the parts to be connected in the bonding apparatus
• CPC Class Codes: H01L 2224/85201 : Compression bonding
• CPC Class Codes: H01L 2224/85203 : Thermocompression bonding
• CPC Class Codes: H01L 2224/85205 : Ultrasonic bonding
• CPC Class Codes: H01L 2225/0651 : Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06527 : Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
• CPC Class Codes: H01L 2225/06555 : Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
• CPC Class Codes: H01L 2225/06572 : Auxiliary carrier between devices, the carrier having an electrical connection structure
• CPC Class Codes: H01L 23/49811 : Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/72 : Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 24/78 : Apparatus for connecting with wire connectors
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 25/0652 : the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/16 : the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01044 : Ruthenium [Ru]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01048 : Cadmium [Cd]
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• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
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• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/01204 : 4N purity grades, i.e. 99.99%
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15165 : Monolayer substrate
• CPC Class Codes: H01L 2924/15312 : being a pin array, e.g. PGA
• CPC Class Codes: H01L 2924/1532 : the connection portion being formed on the die mounting surface of the substrate
• CPC Class Codes: H01L 2924/16195 : Flat cap [not enclosing an internal cavity]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/206 : Length ranges
• CPC Class Codes: H01L 2924/2075 : larger or equal to 1 micron less than 10 microns
• CPC Class Codes: H01L 2924/20751 : larger or equal to 10 microns less than 20 microns
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/20753 : larger or equal to 30 microns less than 40 microns
• CPC Class Codes: H01L 2924/20754 : larger or equal to 40 microns less than 50 microns
• CPC Class Codes: H01L 2924/20755 : larger or equal to 50 microns less than 60 microns
• CPC Class Codes: H01L 2924/20756 : larger or equal to 60 microns less than 70 microns
• CPC Class Codes: H01L 2924/20757 : larger or equal to 70 microns less than 80 microns
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01R 12/52 : connecting to other rigid printed circuits or like structures
• CPC Class Codes: H05K 1/141 : One or more single auxiliary printed circuits mounted on a main printed circuit, e.g. modules, adapters H05K1/142 and H05K1/147 take precedence
• CPC Class Codes: H05K 2201/0397 : Tab forming integral conductive tabs H05K3/4092
• CPC Class Codes: H05K 2201/068 : wherein the coefficient of thermal expansion is important
• CPC Class Codes: H05K 2201/1031 : Surface mounted metallic connector elements
• CPC Class Codes: H05K 2201/10318 : Surface mounted metallic pins
• CPC Class Codes: H05K 2201/10378 : Interposers
• CPC Class Codes: H05K 2201/10719 : Land grid array [LGA]
• CPC Class Codes: H05K 2201/10734 : Ball grid array [BGA]; Bump grid array
• CPC Class Codes: H05K 2201/10757 : Bent leads
• CPC Class Codes: H05K 2201/10878 : Means for retention of a lead in a hole
• CPC Class Codes: H05K 2201/10909 : Materials of terminal, e.g. of leads or electrodes of components
• CPC Class Codes: H05K 2201/10946 : Leads attached onto leadless component after manufacturing the component
• CPC Class Codes: H05K 3/20 : by affixing prefabricated conductor pattern H05K1/187, H05K3/046, H05K3/4658, H05K3/4682 takes precedence
• CPC Class Codes: H05K 3/308 : Adaptations of leads connectors to printed circuits H01R12/00
• CPC Class Codes: H05K 3/326 : the printed circuit having integral resilient or deformable parts, e.g. tabs or parts of flexible circuits H05K3/365 takes precedence
• CPC Class Codes: H05K 3/3421 : Leaded components
• CPC Class Codes: H05K 3/3426 : characterised by the leads
• CPC Class Codes: H05K 3/368 : parallel to each other H05K3/361 takes precedence
• CPC Class Codes: H05K 3/4015 : using auxiliary conductive elements, e.g. pieces of metal foil, metallic spheres
• CPC Class Codes: H05K 3/4092 : Integral conductive tabs, i.e. conductive parts partly detached from the substrate
• CPC Class Codes: H05K 7/1069 : with spring contact pieces
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10T 29/49147 : Assembling terminal to base
• CPC Class Codes: Y10T 29/49149 : by metal fusion bonding
• CPC Class Codes: Y10T 29/49174 : Assembling terminal to elongated conductor
• CPC Class Codes: Y10T 29/49204 : Contact or terminal manufacturing
• CPC Class Codes: Y10T 29/49208 : by assembling plural parts
• CPC Class Codes: Y10T 29/49213 : Metal

Abstract

Contact structures exhibiting resilience or compliance for a variety of electronic components are formed by bonding a free end of a wire to a substrate, configuring the wire into a wire stem having a springable shape, severing the wire stem, and overcoating the wire stem with at least one layer of a material chosen primarily for its structural (resiliency, compliance) characteristics.

Claims

1. Method of fabricating an electrical contact structure, comprising:

configuring a flexible elongate member to have a springable shape, said elongate member having a length;

selecting an overcoat material for its structural characteristics; and

applying the overcoat material onto the elongate member.

2. Method, according to

claim 1

, wherein:

the resulting contact structure exhibits both elasticity and plasticity.

3. Method, according to

claim 1

, wherein:

the elongate member serves as a falsework for the resulting resilient electrical contact structure; and

the overcoat material serves as a superstructure for the resulting resilient electrical contact structure.

4. Method, according to

claim 1

, further comprising:

leaving the elongate member in place after applying the overcoat.

5. Method, according to

claim 1

, further comprising:

at least partially removing the elongate member after applying the overcoat.

6. Method, according to

claim 5

, further comprising:

fully removing the elongate member after applying the overcoat material.

7. Method, according to

claim 1

,

wherein the elongate member is formed of a first material having a melting temperature;

and

further comprising;

prior to applying the overcoat material, coating the elongate member with a second material which is dissimilar from the first material and which is capable of forming an alloy with the first material, said alloy having a lower melting temperature than the melting temperature of the first material.

8. Method, according to

claim 6

, further comprising:

after applying the overcoat, heating the resulting resilient contact structure to form said alloy.

9. Method, according to

claim 7

, wherein the elongate member is a gold wire, and further comprising:

prior to applying the overcoat material, applying a layer of tin over the gold wire.

10. Method, according to

claim 1

, wherein:

the overcoat material has a set of structural properties; and

the resulting resilient electrical contact structure has a resilience which is determined primarily by the structural properties of the overcoat material.

11. Method, according to

claim 1

, wherein:

the elongate member has a set of physical properties; and

the resulting electrical contact structure has a compliance which is determined by the structural properties of the overcoat and the physical properties of the elongate member.

12. Method, according to

claim 1

, wherein:

the overcoat material is applied to the elongate member by plating.

13. Method, according to

claim 12

, further comprising:

while plating the elongate member, applying heat to create a thermal gradient along the length of the elongate member.

14. Method, according to

claim 12

, further comprising:

causing a thickness of the overcoat material to be greater at a one end of the elongate member than at an opposite end of the elongate member.

15. Method, according to

claim 1

, further comprising:

prior to configuring the elongate member to have a springable shape, bonding a proximal end of the elongate member to a contact area on a substrate.

16. Method, according to

claim 15

, wherein:

the proximal end of the elongate member is bonded to the contact area with a wirebonder.

17. Method, according to

claim 15

, further comprising:

applying the overcoat material along the length of the elongate member and over the contact area.

18. Method, according to

claim 17

, wherein:

the overcoat material is continuous over the contact area and along the length of the elongate member.

19. Method, according to

claim 15

, further comprising:

after configuring the elongate member to have a springable shape, severing the elongate member to have a distal end.

20. Method, according to

claim 19

, further comprising:

severing the elongate member with an electrical discharge from an electrode.

21. Method, according to

claim 20

, further comprising:

while severing the elongate member with the electrical discharge, illuminating at least one of the elongate member and the electrode with ultraviolet light.

22. Method, according to

claim 19

, further comprising:

severing the elongate member with a tool.

23. Method, according to

claim 1

, further comprising:

while configuring the elongate member, applying ultrasonic vibrations to the elongate member.

24. Method, according to

claim 1

, wherein:

the overcoat material is electrically conductive.

25. Method, according to

claim 1

, wherein:

the overcoat material comprises multiple layers of material; and

at least one layer of the overcoat is electrically conductive.

26. Method, according to

claim 1

, wherein:

the overcoat is applied by a technique selected from a group consisting of wet electrochemical techniques, including electrolytic or electroless aqueous solution plating of metals;

electroplating, chemical vapor deposition (Cot), physical vapor deposition (PVD), and any process that causes deposition of materials through decomposition or reaction of gaseous, liquid or solid precursors.

27. Method, according to

claim 1

, further comprising:

attaching a contact pad at a free end of the elongate member.

28. Method, according to

claim 27

, wherein:

the contact pad is attached to the one end of the elongate member prior to applying the overcoat material.

29. Method, according to

claim 27

, wherein:

the contact pad is attached to the one end of the elongate member after applying the overcoat material; and

further comprising;

after attaching the contact pad, applying an additional overcoat material.

30. Method, according to

claim 27

, further comprising:

forming a desired topography on a surface of the contact pad.

31. Method, according to

claim 1

, further comprising:

imparting a desired topography to a free end of the resulting contact structure.

32. Method of electrically interconnecting two electronic components, comprising:

bonding a proximal end of a flexible wire to a contact area on a surface of a first electronic component;

configuring the wire to have a springable shape;

severing the wire to have a distal end;

overcoating the wire and the contact area with an electrically conductive, resilient material, thereby forming a freestanding resilient contact structure mounted by a proximal end to the first electronic component and having a distal end; and

contacting a contact are on a second electronic component with the distal end of the resilient contact structure.

33. Method, according to

claim 32

, wherein:

the freestanding resilient contact structure exhibits both plasticity and elasticity.

34. Method, according to

claim 32

, further comprising:

attaching the distal end of the freestanding resilient contact structure to the second electronic component with a conductive material selected from the group consisting of solder and conductive epoxy.

35. Method, according to

claim 32

, further comprising:

prior to contacting the contact area on the second electronic component, mounting a contact pad to the distal end of the flexible wire.

38. Method, according to

claim 35

, further comprising:

soldering the resilient contact structures within the holes in the interposer substrate.

165. Method, as set forth in

claim 38

, further comprising:

during deposition of the conductive material, causing a compressive internal stress in the conductive material.

36. Method of fabricating an interposer, comprising:

providing an interposer substrate having holes extending therethrough;

providing a sacrificial substrate;

fabricating resilient contact structures on the sacrificial substrate;

causing the resilient contact structures to extend through the holes and to be suspended in the holes; and

removing the sacrificial substrate.

37. Method, according to

claim 36

, further comprising:

causing the resilient contact structures to be suspended within the holes of the interposer substrate with an elastomeric material.

39. Method of mounting a plurality of contact structures to an electronic component, comprising:

fabricating a plurality of electrical contact structures on a sacrificial substrate, each of the electrical contact structures having a tip extending from the sacrificial substrate; and

bringing the sacrificial substrate into proximity with an electronic component so that the tips of the electrical contact structures contact the electronic component;

in a single step, mounting the electrical contact structures by their tips to the electronic component; and

after mounting the electrical contact structures to the electronic component, removing the sacrificial substrate.

40. Method, according to

claim 39

, further comprising:

after removing the sacrificial substrate, plating the electrical contact structures.

41. Method of performing testing selected from the group consisting of test and burn-in on a semiconductor device, comprising:

mounting resilient contact structures directly to a semiconductor device;

urging the semiconductor device against a test board, said test board having contact areas, so that tips of the resilient contact structures are electrically connected to the contact areas on the test board;

performing testing on the semiconductor device;

subsequently mounting the semiconductor device to a system board, said system board having contact areas, so that the tips of the resilient contact structures are electrically connected to the contact areas on the system board.

42. Method, according to

claim 41

, further comprising:

permanently connecting the semiconductor device to the system board.

43. Method, according to

claim 41

, further comprising:

mounting the resilient contact structures to the semiconductor devices prior to singulating the semiconductor devices from a semiconductor wafer.

44. method, according to

claim 41

, further comprising:

mounting the resilient contact structures to the semiconductor devices after singulating the semiconductor devices from a semi-conductor wafer.

45. Method of temporarily connecting to a semiconductor device prior to permanently connecting to the semiconductor device, comprising:

mounting a plurality of electrical contact structures to a bare semiconductor device;

urging the semiconductor device against a first electronic component to effect a temporary connection between the semiconductor device and the first electronic component, with the electrical contact structures serving as an electrical interconnect between the semiconductor device and the first electronic component; and

using the same electrical contact structures mounted to the semiconductor device to effect a permanent connection between the semiconductor device and a second electronic component.

46. Method, according to

claim 45

, further comprising:

effecting the permanent connection by mechanically biasing the semiconductor device against the second electronic component.

47. Method, according to

claim 45

, further comprising:

permanently connecting the semiconductor device to the second electronic component.

48. Method, according to

claim 45

, wherein:

the electrical contact structures are resilient.

49. Method, according to

claim 45

, wherein:

the electrical contact structures are compliant.

50. Electrical connection between two electronic components, comprising:

a conductive path consisting essentially of a metallic coating having at least one electrically-conductive layer, said metallic coating disposed on an elongate member, said coating extending between and interconnecting two electronic components.

51. Electrical connection, according to

claim 50

, wherein:

the coating is a plating having at least one layer.

52. Electrical connection, according to

claim 50

, wherein:

the elongate member is a wire.

53. Electrical connection, according to

claim 52

, wherein:

the wire is electrically conductive.

54. Electrical connection, according to

claim 52

, wherein:

the wire is a selected from a group consisting of gold and its alloys.

55. Electrical connection, according to

claim 52

, wherein:

the wire is a selected from a group consisting of aluminum, copper, metals of the platinum group, lead, tin, indium, and their alloys;

56. Electrical connection, according to

claim 50

, wherein:

the coating is selected from a material and the elongate member is configured so as to impart resiliency to the electrical connection.

57. Electrical connection, according to

claim 50

, wherein:

the plating is a material selected from the group consisting of nickel and its alloys.

58. Electrical connection, according to

claim 50

, wherein:

the plating is a material selected from the group consisting of copper, cobalt, iron, and their alloys, and Ni/Fe/Co materials.

59. Electrical connection, according to

claim 50

, wherein:

the plating is a material selected from the group consisting of gold, silver, elements of the platinum group, noble or semi-noble metals and their alloys, tungsten, molybdenum, cobalt, zinc, tin, solder, and copper.

60. Electronic assembly, comprising:

a plurality of semiconductor dies mounted edge-to-edge, in close proximity to one another, on at least one side of a printed circuit board, each semiconductor die electrically connected to the printed circuit board by free-standing, resilient contact structures mounted to each of the semiconductor dies.

61. Electronic assembly, according to

claim 60

, wherein:

the semiconductor dies are memory devices.

62. Electronic assembly, according to

claim 60

, wherein:

the electronic assembly is a single in-line memory module (SIMM).

63. Electronic assembly, according to

claim 60

, wherein:

the resilient contact structures are compliant.

64. Electronic assembly, according to

claim 60

, wherein:

the semiconductor dies are mounted to both sides of the printed circuit board.

65. Electronic assembly, according to

claim 60

, wherein:

the freestanding resilient contact structures are formed by;

individually bonding wires to the semiconductor dies; and

overcoating the wires contemporaneously with one another.

66. Electronic assembly, according to

claim 60

, wherein:

the freestanding resilient contact structures are formed by;

individually bonding wires to a sacrificial substrate;

plating the wires; and

gang-transferring the plated wires to at least one of the semiconductor dies in a single step.

67. Electronic assembly, according to

claim 66

, further comprising:

after gang-transferring the plated wires, further plating the plated wires.

68. Electronic assembly, according to

claim 60

, further comprising:

a rigidizing material encapsulating at least a portion of the resilient contact structures.

69. Method of creating a superstructure on a falsework, comprising:

mounting at least one falsework on an electronic component;

disposing the substrate in a plating bath to form a superstructure on the at least one falsework.

70. Method, according to

claim 69

further comprising:

prior to plating the at least one falsework, configuring each one of the at least one falseworks to have a springable shape.

71. Method, according to

claim 69

, further comprising:

while plating the at least one falsework, heating the electronic component.

72. Method, according to

claim 71

, wherein:

the resulting plating exhibits a thickness gradient of at least 1.5;

1 from a thickest portion of the plating to a thinnest portion of the plating.

73. Method, according to

claim 69

, wherein:

at least two falseworks are mounted on the electronic component; and

the falseworks are free-standing, having a proximal end mounted to the substrate and a distal end; and

further comprising;

configuring the falseworks to have a greater spacing at their distal ends than at their proximal ends.

74. Method, according to

claim 69

, wherein:

the falseworks are free-standing, having a proximal end mounted to the substrate and a distal end; and

further comprising;

prior to plating the at least one falsework, applying a masking material to the distal ends of the falseworks; and

after plating the falseworks, removing the masking material.

75. Method, according to

claim 74

, further comprising:

after removing the masking material, further plating the falseworks.

76. Method, according to

claim 69

, further comprising:

after forming the superstructure on the falsework, removing a portion of the superstructure to expose the falsework.

77. Method, according to

claim 69

, further comprising:

prior to plating the falseworks, applying a material onto the falsework which is suitable for forming an alloy with the falsework which exhibits a lower melting temperature than that of the falsework.

78. Method, according to

claim 69

, wherein:

the falseworks are free-standing, having a proximal end mounted to the electronic component, and having a distal end, and further comprising;

prior to plating the at least one falsework, applying a masking material to the distal ends of the falseworks;

after plating the falseworks, removing the masking material; and

after removing the masking material, heating the plated falseworks.

79. Method, according to

claim 69

, wherein:

the falseworks are free-standing, having a proximal end mounted to the electronic component and a distal end, and a length therebetween and further comprising;

prior to plating the at least one falsework, applying a masking material to a one side of each falsework, along its length;

after plating the falseworks, removing the masking material; and

after removing the masking material, heating the plated falseworks.

80. Method of tailoring the thickness of a plating, comprising:

disposing a member to be plated in a plating bath; and

creating a temperature gradient on the member, while plating the member.

81. Method, according to

claim 80

, further comprising:

creating the temperature gradient with a heat source selected from the group consisting of a resistive heat element, a thermocouple device, a Peltier-type device, an incandescent radiant heat source and a coherent light source.

82. A method of making two or more free-standing resilient contact structures, comprising:

forming a loop having two ends, a first of the two ends attached to a first terminal, a second of the two ends attached to a second terminal, a bight portion of the loop disposed approximately midway along the loop, a first leg portion extending from the first end to the bight portion, and a second leg extending from the second end to the bight portion; and

removing the bight portion.

83. Method, according to

claim 82

, further comprising:

overcoating the loop prior to removing the bight portion.

84. Method, according to

claim 82

, further comprising:

overcoating the loop after removing the bight portion.

85. Method, according to

claim 82

, further comprising:

prior to removing the bight portion, encapsulating the loop with a rigidizing material.

86. Method, according to

claim 85

, further comprising:

removing the bight portion by grinding.

87. Method, according to

claim 86

, further comprising:

after removing the bight portion, removing the encapsulant material.

119. The method as claimed in

claim 83

, performed on a plurality of the terminals on the electronic component.

88. A method for mounting a protuberant conductive contact to an electronic component, the method comprising the sequential steps of:

providing a wire having a continuous feed end,

bonding the feed end to the component,

forming, from the bonded feed end, a stem which protrudes from the component, said stem having a first stem end which is the bonded feed end,

severing the stem at a second stem end to define a skeleton,

depositing a metallic conductive material to envelop the skeleton and adjacent surface of the component.

89. The method as claimed in

claim 88

, further comprising:

prior to the severing step, bonding the second stem end to the component.

91. The method as claimed in

claim 88

, further comprising:

after the severing step, continuing sequentially the bonding step and the forming step and the severing step for a predetermined number of stems to comprise the skeleton.

92. The method as claimed in

claim 91

, further comprising:

before each of the severing steps, each of the second stem ends is bonded to the component.

105. The method as claimed in

claim 88

, wherein the cross-section of the wire is rectangular.

106. The method as claimed in

claim 88

, wherein:

the wire is made of a metal selected from a group consisting of gold, silver, beryllium, copper, aluminum, rhodium, ruthenium, palladium, platinum, cadmium, tin, lead, indium, antimony, phosphorous, boron, nickel, magnesium, and their alloys, and

at least one of the layers of the conductive material is a metal selected from a group consisting of nickel, phosphorous, boron, cobalt, iron, chromium, copper, zinc, tungsten, tin, lead, bismuth, indium, cadmium, antimony, gold, silver, rhodium, palladium, ruthenium, and their alloys.

126. The method as claimed in

claim 88

, performed on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact.

127. The method as claimed in

claim 89

, performed on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact.

129. The method as claimed in

claim 91

, performed on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact.

132. The method as claimed in

claim 88

, wherein:

the conductive material is provided with a multitude of microprotrusions on its surface.

133. The method as claimed in

claim 89

, wherein:

the conductive material is provided with a multitude of microprotrusions on its surface.

135. The method as claimed in

claim 91

, wherein:

the conductive material is provided with a multitude of microprotrusions on its surface.

137. The method as claimed in

claim 88

, wherein:

the conductive material enveloping the skeleton and at least the adjacent surface of the component comprises a plurality of dissimilar layers.

138. The method as claimed in

claim 89

, wherein:

the conductive material enveloping the skeleton and at least the adjacent surface of the component comprises a plurality of dissimilar layers.

140. The method as claimed in

claim 91

, wherein:

the conductive material enveloping the skeleton and at least the adjacent surface of the component comprises a plurality of dissimilar layers.

143. The method as claimed in

claim 88

, further comprising:

performing the method on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact;

wherein the depositing step includes placement of a plurality of layers each differing from one another.

144. The method as claimed in

claim 89

, further comprising:

performing the method on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact;

wherein the depositing step includes placement of a plurality of layers each differing from one another.

146. The method as claimed in

claim 91

, further comprising:

performing the method on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact;

wherein the depositing step includes placement of a plurality of layers each differing from one another.

149. The method as claimed in

claim 88

, further comprising:

performing the method on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact;

wherein the depositing step includes placement of a plurality of layers each differing from one another; and

wherein at least one of the layers comprising conductive material has a jagged topography in order to reduce contact resistance of the protuberant conductive contact when mated to a matching terminal.

150. The method as claimed in

claim 89

, further comprising:

performing the method on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact;

wherein the depositing step includes placement of a plurality of layers each differing from one another; and

wherein at least one of the layers comprising conductive material has a jagged topography in order to reduce contact resistance of the protuberant conductive contact when mated to a matching terminal.

152. The method as claimed in

claim 91

, further comprising:

performing the method on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact;

wherein the depositing step includes placement of a plurality of layers each differing from one another; and

wherein at least one of the layers comprising conductive material has a jagged topography in order to reduce contact resistance of the protuberant conductive contact when mated to a matching terminal.

155. The method as claimed in

claim 88

, wherein:

the deposition is performed by a process of electrochemical plating in an ionic solution.

156. The method as claimed in

claim 89

, wherein:

the deposition is performed by a process of electrochemical plating in an ionic solution.

158. The method as claimed in

claim 91

, wherein:

the deposition is performed by a process of electrochemical plating in an ionic solution.

161. Method, as set forth in

claim 88

, wherein:

the conductive material is deposited by an electroless plating process.

172. The method, as claimed in

claim 88

, wherein:

the cross-sectional area of the wire is rectangular.

176. The method as claimed in

claim 88

, wherein:

the wire is made of a metal selected from a group consisting of gold, silver, beryllium, copper, aluminum, rhodium, ruthenium, palladium, platinum, cadmium, tin, lead, indium, antimony, phosphorous, boron, nickel, magnesium, and their alloys.

181. The method as claimed in

claim 88

, wherein:

the conductive material is deposited as a plurality of layers, and at least one of the layers of the conductive material is a metal selected from a group consisting of nickel, phosphorous, boron, cobalt, iron, chromium, copper, zinc, tungsten, tin, lead, bismuth, indium, cadmium, antimony, gold, silver, rhodium, palladium, ruthenium, and their alloys.

185. A method, according to

claim 88

, further comprising:

performing the method on at least one terminal on an electronic component, wherein;

the wire is made primarily of a metal selected from a group consisting of gold, copper, aluminum, silver, lead, tin, indium and their alloys;

the skeleton is coated with a first layer of the conductive material selected from a group consisting of nickel, cobalt, boron, phosphorous, copper, tungsten, titanium, chromium, and their alloys;

a top layer of the conductive material is solder selected from a group consisting of lead, tin, indium, bismuth, antimony, gold, silver, cadmium and alloys thereof and their alloys.

186. The method as claimed in

claim 89

, further comprising:

performing the method on at least one terminal on an electronic component, wherein;

the wire is made primarily of a metal selected from a group consisting of gold, copper, aluminum, silver, lead, tin, indium and their alloys;

the skeleton is coated with a first layer of the conductive material selected from a group consisting of nickel, cobalt, boron, phosphorous, copper, tungsten, titanium, chromium, and their alloys;

a top layer of the conductive material is solder selected from a group consisting of lead, tin, indium, bismuth, antimony, gold, silver, cadmium and alloys thereof and their alloys.

188. The method as claimed in

claim 91

, further comprising:

performing the method on at least one terminal on an electronic component, wherein;

the wire is made primarily of a metal selected from a group consisting of gold, copper, aluminum, silver, lead, tin, indium and their alloys;

the skeleton is coated with a first layer of the conductive material selected from a group consisting of nickel, cobalt, boron, phosphorous, copper, tungsten, titanium, chromium, and their alloys;

a top layer of the conductive material is solder selected from a group consisting of lead, tin, indium, bismuth, antimony, gold, silver, cadmium and alloys thereof and their alloys.

193. The method as claimed in

claim 88

, wherein the conductive material is reactive with the wire stem;

and

further comprising;

a barrier layer which is not reactive with the wire stem disposed between the wire stem and the conductive material.

196. The method as claimed in

claim 88

, wherein:

each of two surfaces of the electronic component has at least one protuberant contact mounted thereto.

201. The method as claimed in

claim 88

, wherein:

the wire stem is S-shaped.

90. A method for mounting a protuberant conductive contact to an electronic component, the method comprising the sequential steps of:

providing a wire having a continuous feed end,

bonding the feed end to the component,

forming, from the bonded feed end, a stem which protrudes from the component, said stem having a first stem end which is the bonded feed end,

severing the stem at a second stem end to define a skeleton,

depositing a metallic conductive material to jacket the skeleton and adjacent surface of the component.

108. The method as claimed in

claim 90

, further comprising:

after the severing step, continuing sequentially the bonding step and the forming step and the severing step for a predetermined number of stems to comprise the skeleton.

109. The method as claimed in

claim 108

, further comprising:

before each of the severing steps, each of the second stem ends is intimately bonded to the component.

110. The method as claimed in

claim 90

, further comprising:

before the severing step, bonding the second stem to the electronic component.

111. The method as claimed in

claim 90

, further comprising:

after the severing step, continuing sequentially the bonding step and the forming step and the severing step for a predetermined number of stems to comprise the skeleton.

112. The method as claimed in

claim 90

, further comprising:

before each of the severing steps, each of the second stem ends is bonded to the electronic component.

120. The method as claimed in

claim 90

, performed on a plurality of the terminals on the electronic component.

128. The method as claimed in

claim 90

, performed on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact.

134. The method as claimed in

claim 90

, wherein:

the conductive material is provided with a multitude of microprotrusions on its surface.

139. The method as claimed in

claim 90

, wherein:

the conductive material enveloping the skeleton and at least the adjacent surface of the component comprises a plurality of dissimilar layers.

145. The method as claimed in

claim 90

, further comprising:

performing the method on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact;

wherein the depositing step includes placement of a plurality of layers each differing from one another.

151. The method as claimed in

claim 90

, further comprising:

performing the method on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact;

wherein the depositing step includes placement of a plurality of layers each differing from one another; and

wherein at least one of the layers comprising conductive material has a jagged topography in order to reduce contact resistance of the protuberant conductive contact when mated to a matching terminal.

157. The method as claimed in

claim 90

, wherein:

the deposition is performed by a process of electrochemical plating in an ionic solution.

162. Method, as set forth in

claim 90

, wherein:

the conductive material is deposited by an electroless plating process.

166. Method, as set forth in

claim 90

, further comprising:

during deposition of the conductive material, causing a compressive internal stress in the conductive material.

173. The method as claimed in

claim 90

, wherein:

the wire is made of a metal selected from a group consisting of gold, silver, beryllium, copper, aluminum, rhodium, ruthenium, palladium, platinum, cadmium, tin, lead, indium, antimony, phosphorous, boron, nickel, magnesium, and their alloys, and

the conductive material is deposited as a plurality of layers, and at least one of the layers of the conductive material is a metal selected from a group consisting of nickel, phosphorous,

boron, cobalt, iron, chromium, copper, zinc, tungsten, tin, lead, bismuth, indium, cadmium, antimony, gold, silver, rhodium, palladium, ruthenium, and their alloys.

177. The method as claimed in

claim 90

, wherein:

the wire is made of a metal selected from a group consisting of gold, silver, beryllium, copper, aluminum, rhodium, ruthenium, palladium, platinum, cadmium, tin, lead, indium, antimony, phosphorous, boron, nickel, magnesium, and their alloys.

182. The method as claimed in

claim 90

, wherein:

the conductive material is deposited as a plurality of layers, and at least one of the layers of the conductive material is a metal selected from a group consisting of nickel, phosphorous, boron, cobalt, iron, chromium, copper, zinc, tungsten, tin, lead, bismuth, indium, cadmium, antimony, gold, silver, rhodium, palladium, ruthenium, and their alloys.

187. The method as claimed in

claim 90

, further comprising:

performing the method on at least one terminal on an electronic component, wherein;

the wire is made primarily of a metal selected from a group consisting of gold, copper, aluminum, silver, lead, tin, indium and their alloys;

the skeleton is coated with a first layer of the conductive material selected from a group consisting of nickel, cobalt, boron, phosphorous, copper, tungsten, titanium, chromium, and their alloys;

a top layer of the conductive material is solder selected from a group consisting of lead, tin, indium, bismuth, antimony, gold, silver, cadmium and alloys thereof and their alloys.

197. The method as claimed in

claim 90

, wherein:

each of two surfaces of the electronic component has at least one protuberant contact mounted thereto.

202. The method as claimed in

claim 90

, wherein:

the wire stem is S-shaped.

93. A method for mounting a protuberant conductive contact to a conductive terminal on an electronic component, the method comprising the sequential steps of:

providing a wire having a continuous feed end,

bonding the feed end to the terminal,

forming, from the bonded feed end, a stem which protrudes from the terminal, said stem having a first stem end which is the bonded feed end,

severing the stem at a second stem end to define a skeleton,

depositing a metallic conductive material to envelop the skeleton and adjacent surface of the terminal.

94. The method as claimed in

claim 93

, further comprising:

before the severing step , bonding the second stem to the terminal.

95. The method as claimed in

claim 93

, further comprising:

after the severing step, continuing sequentially the bonding step and the forming step and the severing step for a predetermined number of stems to comprise the skeleton.

96. The method as claimed in

claim 95

, further comprising:

before each of the severing steps, each of the second stem ends is bonded to the terminal.

104. The method as claimed in

claim 93

, performed on a plurality of terminals on at least one electronic component, wherein shapes of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contacts, and the severing steps are performed on all the stems in a common plane.

113. The method as claimed in

claim 94

, further comprising:

before each of the severing steps, each of the second stem ends is bonded to the terminal.

121. The method as claimed in

claim 93

, performed on a plurality of the terminals on the electronic component.

123. The method as claimed in

claim 93

, performed on a plurality of wires on a plurality of the terminals on the electronic component.

124. The method as claimed in

claim 93

, wherein:

the severing of the second end is performed by melting the wire.

125. The method as claimed in

claim 93

, wherein:

the severing of the second end is performed by mechanical shearing.

130. The method as claimed in

claim 93

, performed on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact.

131. The method as claimed in

claim 95

, performed on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact.

136. The method as claimed in

claim 93

, wherein:

the conductive material is provided with a multitude of microprotrusions on its surface.

141. The method as claimed in

claim 93

, wherein:

the conductive material enveloping the skeleton and at least the adjacent surface of the component comprises a plurality of dissimilar layers.

142. The method as claimed in

claim 95

, wherein:

the conductive material enveloping the skeleton and at least the adjacent surface of the component comprises a plurality of dissimilar layers.

147. The method as claimed in

claim 93

, further comprising:

performing the method on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact;

wherein the depositing step includes placement of a plurality of layers each differing from one another.

148. The method as claimed in

claim 95

, further comprising:

performing the method on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact;

wherein the depositing step includes placement of a plurality of layers each differing from one another.

153. The method as claimed in

claim 93

, further comprising:

performing the method on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact;

wherein the depositing step includes placement of a plurality of layers each differing from one another; and

wherein at least one of the layers comprising conductive material has a jagged topography in order to reduce contact resistance of the protuberant conductive contact when mated to a matching terminal.

154. The method as claimed in

claim 95

, further comprising:

performing the method on a plurality of the terminals, wherein a shape of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contact;

wherein the depositing step includes placement of a plurality of layers each differing from one another; and

wherein at least one of the layers comprising conductive material has a jagged topography in order to reduce contact resistance of the protuberant conductive contact when mated to a matching terminal.

159. The method as claimed in

claim 93

, wherein:

the deposition Is performed by a process of electrochemical plating in an ionic solution.

160. The method as claimed in

claim 95

, wherein:

the deposition is performed by a process of electrochemical plating in an ionic solution.

163. Method, as set forth in

claim 93

, wherein:

the conductive material is deposited by an electroless plating process.

167. Method, as set forth in

claim 93

, further comprising:

during deposition of the conductive material, causing a compressive internal stress in the conductive material.

171. The method as claimed in

claim 95

, performed on a plurality of terminals on at least one electronic component, wherein shapes of the skeleton and mechanical properties of the conductive material are organized collectively to impart resilience to the protuberant conductive contacts, and the severing steps are performed on all the stems in a common plane.

174. The method as claimed in

claim 93

, wherein:

the wire is made of a metal selected from a group consisting of gold, silver, beryllium, copper, aluminum, rhodium, ruthenium, palladium, platinum, cadmium, tin, lead, indium, antimony, phosphorous, boron, nickel, magnesium, and their alloys, and

the conductive material is deposited as a plurality of layers, and at least one of the layers of the conductive material is a metal selected from a group consisting of nickel, phosphorous, boron, cobalt, iron, chromium, copper, zinc, tungsten, tin, lead, bismuth, indium, cadmium, antimony, gold, silver, rhodium, palladium, ruthenium, and their alloys.

178. The method as claimed in

claim 93

, wherein:

the wire is made of a metal selected from a group consisting of gold, silver, beryllium, copper, aluminum, rhodium, ruthenium, palladium, platinum, cadmium, tin, lead, indium, antimony, phosphorous, boron, nickel, magnesium, and their alloys.

183. The method as claimed in

claim 93

, wherein:

the conductive material is deposited as a plurality of layers, and at least one of the layers of the conductive material is a metal selected from a group consisting of nickel, phosphorous, boron, cobalt, iron, chromium, copper, zinc, tungsten, tin, lead, bismuth, indium, cadmium, antimony, gold, silver, rhodium, palladium, ruthenium, and their alloys.

189. The method as claimed in

claim 93

, further comprising:

performing the method on at least one terminal on an electronic component, wherein;

the wire is made primarily of a metal selected from a a group consisting of gold, copper, aluminum, silver, lead, tin, indium and alloys thereof;

the skeleton is coated with a first layer of the conductive material selected from a group consisting of nickel, cobalt, boron, phosphorous, copper, tungsten, titanium, chromium, and their alloys;

a top layer of the conductive material is solder selected from a group consisting of lead, tin, indium, bismuth, antimony, gold, silver, cadmium and their alloys.

190. The method as claimed in

claim 95

, further comprising:

performing the method on at least one terminal on an electronic component, wherein;

the wire is made primarily of a metal selected from a group consisting of gold, copper, aluminum, silver, lead, tin, indium and their alloys;

the skeleton is coated with a first layer of the conductive material selected from a group consisting of nickel, cobalt, boron, phosphorous, copper, tungsten, titanium, chromium, and their alloys;

a top layer of the conductive material is solder selected from a group consisting of lead, tin, indium, bismuth, antimony, gold, silver, cadmium and alloys thereof and their alloys.

194. The method as claimed in

claim 93

, wherein the conductive material is reactive with the wire stem;

and

further comprising;

a barrier layer which is not reactive with the wire stem disposed between the wire stem and the conductive material.

195. The method as claimed in

claim 95

, wherein the conductive material is reactive with the wire stem;

and

further comprising;

a barrier layer which is not reactive with the wire stem disposed between the wire stem and the conductive material.

198. The method as claimed in

claim 93

, wherein:

each of two surfaces of the electronic component has at least one protuberant contact mounted thereto.

203. The method as claimed in

claim 93

, wherein:

the wire stem is S-shaped.

97. A method for mounting a protuberant conductive contact to a conductive terminal on an electronic component, the method comprising the sequential steps of:

providing a wire having a continuous feed end,

bonding the feed end to the terminal,

forming, from the bonded feed end, a stem which protrudes from the terminal, said stem having a first stem end which is the bonded feed end,

severing the stem at a second stem end to define a skeleton,

depositing a metallic conductive material to jacket the skeleton and adjacent surface of the terminal.

98. The method as claimed in

claim 97

, further comprising:

before the severing step, bonding the second stem end to the terminal.

99. The method as claimed in

claim 97

, further comprising:

after the severing step, continuing sequentially the bonding step and the forming step and the severing step for a predetermined number of stems to comprise the skeleton.

100. The method as claimed in

claim 99

, further comprising:

before each of the severing steps, each of the second stem ends is bonded to the terminal.

164. Method, as set forth in

claim 97

, wherein:

the conductive material is deposited by an electroless plating process.

168. Method, as set forth in

claim 97

, further comprising:

during deposition of the conductive material, causing a compressive internal stress in the conductive material.

175. The method as claimed in

claim 97

, wherein:

the wire is made of a metal selected from a group consisting of gold, silver, beryllium, copper, aluminum, rhodium, ruthenium, palladium, platinum, cadmium, tin, lead, indium, antimony, phosphorous, boron, nickel, magnesium, and their alloys, and

the conductive material is deposited as a plurality of layers, and at least one of the layers of the conductive material is a metal selected from a group consisting of nickel, phosphorous, boron, cobalt, iron, chromium, copper, zinc, tungsten, tin, lead, bismuth, indium, cadmium, antimony, gold, silver, rhodium, palladium, ruthenium, and their alloys.

179. The method as claimed in

claim 97

, wherein:

the wire is made of a metal selected from a group consisting of gold, silver, beryllium, copper, aluminum, rhodium, ruthenium, palladium, platinum, cadmium, tin, lead, indium, antimony, phosphorous, boron, nickel, magnesium, and their alloys.

184. The method as claimed in

claim 97

, wherein:

the conductive material is deposited as a plurality of layers, and at least one of the layers of the conductive material is a metal selected from a group consisting of nickel, phosphorous, boron, cobalt, iron, chromium, copper, zinc, tungsten, tin, lead, bismuth, indium, cadmium, antimony, gold, silver, rhodium, palladium, ruthenium, and their alloys.

191. The method as claimed in

claim 97

, further comprising:

performing the method on at least one terminal on an electronic component, wherein;

the wire is made primarily of a metal selected from a group consisting of gold, copper, aluminum, silver, lead, tin, indium and their alloys;

the skeleton is coated with a first layer of the conductive material selected from a group consisting of nickel, cobalt, boron, phosphorous, copper, tungsten, titanium, chromium, and their alloys;

a top layer of the conductive material is solder selected from a group consisting of lead, tin, indium, bismuth, antimony, gold, silver, cadmium and alloys thereof and their alloys.

199. The method as claimed in

claim 97

, wherein:

each of two surfaces of the electronic component has at least one protuberant contact mounted thereto.

204. The method as claimed in

claim 97

, wherein:

the wire stem is S-shaped.

101. A method for mounting a protuberant conductive contact to a conductive terminal on an electronic component, the method comprising the sequential steps of:

providing a wire having a continuous feed end and a length,

in a first bonding step, bonding the feed end to the terminal,

forming, from the bonded feed end, a stem which protrudes from the terminal, said stem having a first stem end which is the bonded feed end,

sequentially bonding intermediate portions along the length of the wire to the terminal, forming protruding stem segments between each pair of bonds, and

in a final bonding step, severing the wire to define a skeleton, and

depositing a metallic conductive material to envelop the skeleton and adjacent surface of the electronic component.

107. The method as claimed in

claim 101

, further comprising:

performing the method on at least one terminal on an electronic component, wherein;

the wire is made primarily of a metal selected from a group consisting of gold, copper, aluminum, silver, lead, tin, indium and their alloys;

the skeleton is coated with a first layer of the conductive material selected from a group consisting of nickel, cobalt, boron, phosphorous, copper, tungsten, titanium, chromium, and their alloys;

a top layer of the conductive material is solder selected from a group consisting of lead, tin, indium, bismuth, antimony, gold, silver, cadmium and alloys thereof and their alloys.

114. The method as claimed in

claim 101

, wherein the severing step occurs at substantially the same location as the first bonding step, and the protruding stem segments define a bounded spatial area.

115. The method as claimed in

claim 114

, wherein the conductive material is solder.

116. The method as claimed in

claim 115

, wherein the solder covers the skeleton and the bounded spatial area.

117. The method as claimed in

claim 116

, further comprising:

disposing the electronic component on a heat sink, with the solder of the bounded spatial area in contact with the heat sink.

118. The method as claimed in

claim 116

, further comprising:

disposing the electronic component on a substrate with the solder of the bounded spatial area in contact with the substrate.

122. The method as claimed in

claim 101

, performed on a plurality of the terminals on the electronic component.

180. The method as claimed in

claim 101

, wherein:

the wire is made of a metal selected from a group consisting of gold, silver, beryllium, copper, aluminum, rhodium, ruthenium, palladium, platinum, cadmium, tin, lead, indium, antimony, phosphorous, boron, nickel, magnesium, and their alloys.

192. The method as claimed in

claim 101

, further comprising:

performing the method on at least one terminal on an electronic component, wherein;

the wire is made primarily of a metal selected from a group consisting of gold, copper, aluminum, silver, lead, tin, indium and their alloys;

the skeleton is coated with a first layer of the conductive material selected from a group consisting of nickel, cobalt, boron, phosphorous, copper, tungsten, titanium, chromium, and their alloys;

a top layer of the conductive material is solder selected from a group consisting of lead, tin, indium, bismuth, antimony, gold, silver, cadmium and alloys thereof and their alloys.

200. The method as claimed in

claim 101

, wherein:

each of two surfaces of the electronic component has at least one protuberant contact mounted thereto.

205. The method as claimed in

claim 101

, wherein:

the wire stem is S-shaped.

102. A method for mounting a protuberant conductive contact to a conductive terminal on an electronic component, the method comprising the sequential steps of:

providing a wire having a continuous feed end,

bonding the feed end to the terminal,

forming, from the bonded feed end, a stem which protrudes from the terminal and has a first stem end,

severing the stem at a second stem end to define a skeleton,

depositing a conductive material to envelop the skeleton and adjacent surface of the terminal,

further comprising;

performing the method on a plurality of the terminals and,

wherein;

the forming steps result in a plurality of freestanding protuberant stems,

the severing steps are performed on the respective stems all in a common plane.

103. The method as claimed in

claim 102

, wherein:

the terminals are in different planes.

169. A method for mounting a protuberant conductive contact to a conductive terminal on an electronic component, the method comprising the sequential steps of:

providing a wire having a continuous feed end,

bonding the feed end to the terminal,

forming, from the bonded feed end, a stem which protrudes from the terminal and has a first stem end,

severing the stem at a second stem end to define a skeleton,

depositing a conductive material to envelop the skeleton and adjacent surface of the terminal,

further comprising;

after the severing step, continuing sequentially the bonding step and the forming step and the severing step for a predetermined number of stems to comprise the skeleton,

further comprising;

performing the method on a plurality of the terminals and,

wherein;

the forming steps result in a plurality of freestanding protuberant stems,

the severing steps are performed on the respective stems all in a common plane.

170. The method as claimed in

claim 169

, wherein:

the terminals are in different planes.

206. Method of forming a resilient contact structure extending from a surface of an electronic component, comprising:

bonding an end of a wire to a terminal on a surface of an electronic component to extend initially in a first direction from the surface of the electronic component;

configuring the wire to have a shape including at least two bends;

severing the wire so that a severed end of the wire extends generally in the first direction; and

overcoating the wire and an area surrounding the bonded end of the wire with an electrically conductive, metallic material;

wherein;

the shape of the wire and the mechanical properties of the metallic material cooperate to impart resiliency to a resulting resilient contact structure comprising the wire and the metallic material.

207. Method for manufacturing a conductive contact on an electronic component, comprising:

bonding an end of a wire to a first area on a surface of an electronic component;

shaping the wire to extend as a wire stem from the surface of the electronic component;

severing the wire stem so that it has a free end and a length; and

depositing a conductive coating having at least one layer on the wire stem;

wherein;

the conductive coating covers at least a portion of the wire stem, said portion of the wire stem commencing at the bonded end of the wire stem and continuing along its length; and

the conductive coating covers a second area on the surface of the electronic component, said second area being larger than and encompassing the first area.

208. Method, according to

claim 207

, wherein:

the conductive coating covers the entire length of the wire stem.

209. Method, according to

claim 207

, wherein:

at least one layer of the conductive coating is deposited along the entire length of the wire stem.

210. Method, according to

claim 207

, wherein:

the conductive coating covers only a portion of the length of the wire stem.

211. Method, according to

claim 207

, further comprising:

supplying the wire from a spool of wire.

212. Method, according to

claim 207

, wherein:

the first area is a conductive terminal disposed on the surface of the electronic component.

213. Method, according to

claim 207

, wherein:

the first area is a first portion of a conductive terminal; and

the second area is a second portion of the conductive terminal.

214. Method, according to

claim 207

, further comprising:

forming a plurality of wire stems at a plurality of first and second areas on a conductive layer of the electronic component.

215. Method, according to

claim 207

, wherein:

the wire stem is shaped in two-dimensions to define a skeleton of a resulting contact.

216. Method, according to

claim 207

, wherein:

the wire stem is shaped in three-dimensions to define a skeleton of a resulting contact.

217. Method, according to

claim 207

, wherein:

the wire stem is shaped to have an S-shape.

218. Method, according to

claim 207

, wherein:

the wire stem is shaped to extend normal to the surface of the electronic component.

219. Method, according to

claim 207

, wherein:

the wire stem is shaped to extend at an angle to the surface of the electronic component.

220. Method, according to

claim 207

, wherein:

the electronic component is an interconnection substrate.

221. Method, according to

claim 207

, wherein:

the electronic component is a semiconductor device.

222. Method, according to

claim 221

, wherein:

the semiconductor device is a silicon device.

223. Method, according to

claim 221

, wherein:

the semiconductor device is a gallium arsenide device.

224. Method, according to

claim 207

, wherein:

the electronic component is an interconnect socket.

225. Method, according to

claim 207

, wherein:

the electronic component is a test socket.

226. Method, according to

claim 207

, wherein:

the electronic component is a semiconductor wafer.

227. Method, according to

claim 207

, wherein:

the electronic component is a ceramic semiconductor package.

228. Method, according to

claim 207

, wherein:

the electronic component is a plastic semiconductor package.

229. Method, according to

claim 207

, wherein:

the wire stem is bonded to the surface of the electronic component using ultrasonic bonding equipment.

230. method, according to

claim 207

, wherein:

the wire stem i-s bonded to the surface of the electronic component using thermosonic bonding equipment.

231. Method, according to

claim 207

, wherein:

the wire stem is bonded to the surface of the electronic component using thermocompression bonding equipment.

232. Method, according to

claim 207

, wherein wirebonding equipment is used to bond the end of the wire stem to the surface of the electronic component, and further comprising:

during shaping, controlling all aspects of geometric characteristics of the wire stem with a specific set of commands entered into an electronic control system of the wirebonding equipment.

233. Method, according to

claim 207

, wherein:

automated wirebonding equipment, controllable by a software algorithm, is used to shade the wire stem and to determine the coordinate of a tip of its free end.

234. Method, according to

claim 207

, further comprising:

shaping the wire stem with automated equipment controlled by a control system, according to a set of specified parameters.

235. Method, according to

claim 207

, wherein:

the wire is severed by generating a spark.

236. Method, according to

claim 207

, wherein:

the wire is severed using a flame-off technique.

237. Method, according to

claim 207

, further comprising:

in same step as severing the wire stem, forming a ball at a tip of the free end of the wire stem.

238. Method, according to

claim 207

, wherein:

the conductive coating is deposited by an electrochemical process.

239. Method, according to

claim 207

, wherein:

the conductive coating is deposited by an electrolytic plating process.

240. Method, according to

claim 207

, wherein:

the conductive coating is deposited by an electroless plating process.

241. Method, according to

claim 207

, wherein:

the conductive coating is deposited by a process selected from the group consisting of physical vapor deposition and chemical vapor deposition.

242. Method, according to

claim 207

, wherein:

the conductive coating is deposited by a process that involves the decomposition of gaseous, liquid or solid precursors.

243. Method, according to

claim 207

, further comprising:

providing the conductive coating with a plurality of local protrusions.

244. Method, according to

claim 243

, further comprising:

reducing a contact resistance between the conductive contact and an electronic device to which the conductive contact is mated with the local protrusions.

245. Method, according to

claim 243

, wherein:

the local protrusions are provided by dendritic growth of an electroplated deposit.

246. Method, according to

claim 243

, wherein:

the local protrusions are provided by incorporation of foreign particulates into the conductive coating during its deposition onto the wire stem.

247. Method, according to

claim 243

, wherein:

a uniform first layer of the conductive coating is deposited onto the wire stem; and

further comprising forming the local protrusions in a subsequently deposited layer of the conductive coating.

248. Method, according to

claim 247

, wherein:

the first layer is selected to be a material suitable for imparting resilient properties to the conductive contact; and

the subsequently deposited layer is selected to be a material that reduces the contact resistance between the conductive contact and the electronic device to which the conductive contact is mated.

249. Method, according to

claim 207

, wherein:

an outer one of a plurality of layers deposited on the wire stem includes a conductive material is selected from the group consisting of gold, silver, elements of the platinum group, and their alloys.

250. Method, according to

claim 207

, wherein:

the wire stem comprises a material selected from the group consisting of gold, aluminum, copper, beryllium, cadmium, silicon, magnesium, silver and platinum, and their alloys.

251. Method, according to

claim 207

, wherein:

the wire stem has a diameter between 0.0005 and 0.005 inches.

252. Method, according to

claim 251

, wherein:

the wire stem has a diameter between 0.0007 and 0.003 inches

253. Method, according to

claim 207

, wherein:

the conductive coating comprises a material selected from the group consisting of nickel, copper, cobalt, iron, and their alloys.

254. Method, according to

claim 207

, wherein:

the coating has a tensile strength in excess of 80,000 pounds per square inch.

255. Method, according to

claim 207

, further comprising:

during deposition of the conductive coating, causing a compressive internal stressing in the conductive coating.

256. Method, according to

claim 207

, wherein:

the nickel has a thickness between 0.00005 and 0.007 inches.

257. Method, according to

claim 256

, wherein:

the nickel has a thickness between 0.00010 and 0.003 inches.

258. Method, according to

claim 207

, wherein:

the conductive coating is deposited as two or more layers, at least the outer layer of the two or more layers being a conductive material.

259. Method, according to

claim 258

, wherein:

a first layer, deposited onto the wire stem, is nickel; and

a second layer deposited over the first layer is a material selected from the group consisting of gold, silver, elements of the platinum group, and their alloys.

260. Method, according to

claim 258

, wherein:

the two or more layers are selected to tailor the mechanical characteristics of the protuberant contact.

261. Method, according to

claim 207

, wherein:

the first area includes a layer of material selected from the group consisting of gold and aluminum.

262. Method, according to

claim 207

, wherein:

the first area and the second area are portions of a conductive layer previously applied to the surface of the electronic component.

263. Method, according to

claim 262

, further comprising:

after bonding, removing the conductive layer from the electronic component, selectively, in all but the first and second area.

264. Method, according to

claim 207

, further comprising:

establishing a predetermined resiliency for the contact based on a shape of the wire stem and characteristics of the conductive coating selected from the group consisting of thickness, yield strength, and elastic modulus.

265. Method, according to

claim 207

, wherein:

the wire stem comprises a material having a first strength; and

the conductive coating comprises a material having a second strength which is greater than the strength of the first material.

266. Method, according to

claim 207

, wherein:

the conductive contact has controlled characteristics selected from the group consisting of physical properties, metallurgical properties, mechanical properties, bulk and surface.

267. Method, according to

claim 207

, wherein:

the raised conductive contact is shaped as a pin-shaped contact; and

the electronic component is a pin grid array package.

268. Method, according to

claim 267

, wherein:

the pin grid array package is a ceramic pin grid array package.

269. Method, according to

claim 267

, wherein:

the pin grid array package is a plastic pin grid array package.

270. Method, according to

claim 207

, further comprising:

bonding, shaping and severing a plurality of wire stems, a first portion of the wire stems originating from a first level of the electronic component, a second portion of the wire stems originating from a second level of the electronic component, said first level and said second level being non-coplanar with one another;

wherein;

the free ends of said plurality of wire stems are severed to be substantially coplanar with one another.

271. Method, according to

claim 270

, wherein:

the free ends of the wire stems are severed to extend to a plane parallel to at least one of the first and second levels of the electronic component.

272. Method, according to

claim 207

, further comprising:

bonding, shaping and severing a plurality of wire stems, a first portion of the wire stems originating from a first electronic component, a second portion of the wire stems originating from a second electronic component;

wherein;

the free ends of said plurality of wire stems are severed to be substantially coplanar with one another.

273. Method, according to

claim 272

, wherein:

the free ends of the wire stems are severed to extend to a plane parallel to at least one of the first and second electronic components.

274. Method, according to

claim 207

, further comprising:

bonding, shaping and severing a plurality of wire stems originating from the electronic component, a first portion of the wire stems terminating on a first electronic device, a second portion of the wire stems terminating on a second electronic device.

275. Method, according to

claim 207

, further comprising:

bonding, shaping and severing a plurality of wire stems;

wherein;

a first portion of the wire stems are severed to terminate at a first level above the surface of the electronic component; and

a second portion of the wire stems are severed to terminate at a second level above the surface of the electronic component, said first level and said second level being non-coplanar.

276. Method, according to

claim 207

, further comprising:

bonding, shaping and severing a plurality of wire stems originating from at least two electronic components, each of a portion of the wire stems extending from a corresponding one of the at least two electronic components.

277. Method, according to

claim 276

, further comprising:

interconnecting the first and second electronic components.

278. Method, according to

claim 276

, wherein:

one of the first and second electronic components is a capacitor.

279. Method, according to

claim 276

, wherein:

one of the first and second electronic components is a resistor.

280. Method, according to

claim 207

, further comprising:

bonding, shaping and severing a plurality of wire stems;

wherein;

a first portion of the wire stems are severed to terminate at a first level above the surface of the electronic component; and

a second portion of the wire stems are severed to terminate at a second level above the surface of the electronic component, said first level and said second level being non-coplanar; and

further comprising;

terminating the first portion of the wire stems on an interconnection substrate; and

terminating the second portion of the wire stems on an electronic device disposed between the interconnection substrate and the electronic component.

281. Method, according to

claim 280

, wherein:

the electronic component is a bare, unpackaged semiconductor device.

282. Method, according to

claim 280

, wherein:

the electronic device is a capacitor.

283. Method, according to

claim 280

, wherein:

the electronic component is a bare, unpackaged semiconductor device; and

the electronic device is a capacitor.

284. Method, according to

claim 207

, wherein:

the conductive coating comprises solder, and the conductive contact is a tower-like solder contact extending from the surface of the electronic component.

285. Method, according to

claim 284

, further comprising:

prior to depositing the conductive coating on the wire stem, depositing a barrier layer on the wire stem, said barrier layer being a material selected to prevent a reaction between the conductive coating and the wire stem.

286. Method, according to

claim 285

, wherein:

the wire stem is gold; and

the barrier layer is a material selected from the group consisting of nickel, copper, cobalt, iron, or their alloys.

287. Method, according to

claim 207

, further comprising:

establishing the soldering characteristics of the electronic substrate by selection of a material composition of the conductive coating.

288. Method, according to

claim 207

, wherein:

establishing the long term effects from interaction of the raised conductive contact with solder. by selection of a material composition of the conductive coating.

289. Method, according to

claim 207

, wherein:

the wire stem has a diameter between 0.0005 and 0.005 inches; and

further comprising;

prior to depositing the solder, coating the wire stem with nickel having a thickness between 0.00005 and 0.007 inches.

290. Method, according to

claim 289

, wherein:

the wire stem has a diameter between 0.0007 and 0.003 inches; and

the nickel has a thickness between 0.00010 and 0.003 inches.

291. Method, according to

claim 207

, further comprising:

shaping the wire stem in a form of a loop, said loop originating and terminating in a selected second area on the surface of the electronic component.

292. Method, according to

claim 207

, further comprising:

shaping the wire stem in a form of a loop, said loop originating on a conductive terminal of the electronic component, said loop terminating on a sacrificial element.

293. Method, according to

claim 292

, further comprising:

after bonding the free end of the wire stem to the sacrificial conductor, removing the sacrificial element.

294. Method, according to

claim 293

, wherein:

the sacrificial element is removed after depositing the conductive coating on the wire stem.

295. Method, according to

claim 293

, wherein:

the sacrificial element is removed before depositing the conductive coating on the wire stem.

296. Method, according to

claim 207

, further comprising:

shaping the wire stem in a form of a loop, said loop originating on a sacrificial element, said loop terminating on a conductive terminal of the electronic component.

297. Method, according to

claim 207

, further comprising:

shaping the wire stem in a form of a loop, said loop originating in the second area on the surface of the electronic component, said loop terminating in a third area distinct from the second area.

298. Method, according to

claim 207

, further comprising:

shaping the wire stem in a form of a loop, said loop originating in a third area on the surface of the electronic component, said third area distinct from said second area, and said loop terminating in the second area.

299. Method, according to

claim 207

, further comprising:

shaping a first length of the wire stem into a first loop, said first loop originating and terminating on a conductive terminal disposed on the surface of the electronic component;

severing the first length of the wire stem;

shaping a second length of the wire seem into a second loop, said second loop originating and terminating on the conductive terminal and being parallel to the first loop;

severing the second length of the wire; and

depositing a common conductive coating of solder on the first and second loops and onto the conductive terminal to form a controlled aspect ratio column of solder disposed on the conductive terminal of the electronic component; and

prior to depositing the common conductive coating of solder, coating the two loops with a barrier layer;

wherein;

the wire is gold;

the solder is an alloy of lead and tin; and

the barrier layer is a nickel alloy having a thickness on the wires sufficient to deter a reaction between the solder of the conductive coating and the gold of the wire.

300. Method, according to

claim 207

, further comprising:

prior to severing the wire, bonding an intermediate portion of the wire to the electronic component, thereby forming a skeleton on the surface of the electronic component.

301. Method, according to

claim 300

, wherein:

the intermediate portion is bonded to the second area of the electronic component.

302. Method, according to

claim 300

, further comprising:

after bonding the intermediate portion of the wire to the electronic component, coating the skeleton with a solder mass.

303. Method, according to

claim 302

, further comprising:

prior to coating the skeleton with the solder mass, coating the skeleton with a barrier layer.

304. Method, according to

claim 300

, further comprising:

after bonding the intermediate portion of the wire to the electronic component, severing the wire to have a subsequent end for bonding as a subsequent skeleton on the surface of the electronic component.

305. Method, according to

claim 300

, wherein:

a plurality of skeletons are formed on a common second area of the electronic component.

306. Method, according to

claim 305

, wherein:

the common second area is a terminal.

307. Method, according to

claim 305

, wherein:

the plurality of skeletons are overcoated in a common depositing step.

308. Method, according to

claim 300

, further comprising:

after bonding the intermediate portion of the wire to the electronic component, without severing the wire, continuing to bond subsequent intermediate portions of the wire, without severing, to form a sequence of skeletons on the surface of the electronic component.

309. Method, according to

claim 308

, further comprising:

bonding and severing a last one of the skeletons adjacent the first area.

310. Method, according to

claim 308

, wherein:

the sequence of skeletons defines an enclosed area on the surface of the electronic component.

311. Method, according to

claim 300

, further comprising:

depositing solder as the conductive coating in a manner that the solder fills the enclosed area.

312. Method, according to

claim 301

, further comprising:

bringing the enclosed, solder-filled area into contact with an electronic device selected from the group consisting of heat sinks and substrates.

313. Method, according to

claim 207

, further comprising:

repeating the steps of bonding, shaping and severing for a plurality of wire stems, wherein the conductive coating is deposited as a common coating onto the plurality of wire stems.

314. Method, according to

claim 313

, wherein:

the plurality of wire stems are arranged in an array pattern on the surface of the electronic component.

315. Method, according to

claim 207

, further comprising:

bonding the second end of the wire stem to the first area of the electronic component to form a loop; and

further shaping the loop to extend from the electronic component in three-dimensions.

316. Method for manufacturing electrical contacts on a surface of an electronic component, comprising, for each raised electrical contact:

bonding a one end of a wire to a first area on the surface of the electronic component, said surface of the electronic component disposed in a plane defined by an “

x”

axis and a “

y”

axis orthogonal to the “

x”

axis;

with the one end of the wire bonded to the area on the surface of the electronic component, extending the wire in a “

z”

axis mutually orthogonal to the “

x” and

“

y”

axes, and in at least one of the “

x”

or “

y”

directions;

after extending the wire, severing the wire so that it has a length and a free end opposite the one end;

while extending the wire, shaping the wire to have at least one U-shaped bend along its length; and

after extending and shaping the wire, depositing a first electrically conductive, metallic material to cover a second area on the surface of the substrate which is greater than and which subsumes the first area to which the one end of the wire is bonded and to cover at least a portion of the length of the wire, said portion of the wire extending from the one end of the wire along the length of the wire towards the free end of the wire.

317. Method, according to

claim 316

, further comprising:

depositing at least two coatings on the wire.

318. Method of connecting a first electronic component to a second electronic component, comprising:

providing a third electronic component between the first and the second electronic components, said third electronic component having a first plurality of resilient contact structures extending from a first surface thereof for contacting a corresponding plurality of contact points on a face of the first electronic component, said third electronic component having a second plurality of resilient contact structures extending from a second surface thereof for contacting a corresponding plurality of contact points on a face of the second electronic component; and

within the third electronic component, making a connection between the first plurality of resilient contact structures and the second plurality of resilient contact structures.

319. Method, according to

claim 318

, wherein:

the first electronic component is a semiconductor package.

320. Method, according to

claim 318

, wherein:

the first electronic component is an unpackaged semiconductor die.

321. Method, according to

claim 318

, wherein:

the second electronic component is a printed circuit board.

322. Method, according to

claim 318

, wherein:

the third electronic component provides for demountable interconnection between the first and second electronic components.

323. Method of making a temporary connection between a first electronic component and a second electronic component, and subsequently making a permanent connection between the first electronic component and a third electronic component, comprising:

mounting a plurality of resilient contact structures to a surface of the first electronic component;

urging the first electronic component against the second electronic component to effect a temporary connection between the first electronic component and the second electronic component;

removing the second electronic component; and

mounting the first electronic component to the third electronic component.

324. Method, according to

claim 323

, further comprising:

while the first and second electronic components are temporarily connected, performing at least one function selected from the group consisting of burn-in and testing of the first electronic component.

325. Interposer, comprising:

a dielectric substrate having a first surface and a second surface opposite the first surface, a first plurality of conductive areas on the first surface, a second plurality of conductive areas on the second surface, each of the first plurality of conductive areas electrically connected to a corresponding one of the second conductive areas;

a first plurality of resilient contact structures extending from the first conductive areas; and

a second plurality of contact structures extending from the first conductive areas.

326. Interposer, according to

claim 325

, wherein:

the first plurality of resilient contact structures are compliant contact structures.

327. Interposer, according to

claim 326

, further comprising:

at least one standoff element fabricated on the first surface, to limit deflection of the first plurality of resilient contact structures.

328. Interposer structure, according to

claim 325

, wherein:

the electrical connections between the first plurality of conductive areas and the second plurality of conductive areas is plated through holes.

329. Interposer, according to

claim 325

, wherein:

the second plurality of contact structures are resilient contact structures.

330. Interposer, according to

claim 329

, wherein:

the second plurality of contact structures are non-resilient contact structures.

331. Interposer, according to

claim 325

, wherein:

at least one of either of the first plurality of resilient contact structures and the second plurality of contact structures comprises at least two contact structures.

334. Interposer, according to

claim 325

, wherein:

the second plurality of contact structures are resilient contact structures; and

further comprising;

conductive traces on both surfaces of the dielectric substrate.

335. Interposer, according to

claim 325

, further comprising:

standoff elements on the first side of the substrate

336. Interposer, according to

claim 325

, further comprising:

a plurality of conductive areas on the first side of the substrate;

wherein;

the first plurality of resilient contact structures extend from the conductive areas.

337. Interposer, according to

claim 336

, further comprising:

a plurality of holes extending through the substrate; and

wherein;

the second contact structures extend from the conductive areas through the plurality of holes, to the second side of the substrate.

338. Interposer, according to

claim 325

, wherein:

the first plurality of resilient contact structures are arranged in pairs.

339. Interposer, according to

claim 325

, further comprising:

a plurality of conductive areas on the first side of the substrate; and

a plurality of holes extending through the substrate;

wherein;

the first plurality of resilient contact structures extend through the plurality of holes beyond the first side of the substrate to beyond the second side of the substrate; and

the first plurality of resilient contact structures are electrically connected to the conductive areas.

332. Interposer, comprising:

a dielectric substrate having a first surface and a second surface opposite the first surface, and having a plurality of conductive areas on the first surface;

a plurality of resilient contact structures mounted to the plurality of conductive areas, and having a first portion extending beyond the first surface of the dielectric substrate for making a connection to a first electronic component, and having a second portion contiguous with the first portion and extending beyond the second surface of the dielectric substrate for making an interconnect to a second electronic component.

333. Interposer, according to

claim 332

, wherein:

the second portions of the plurality of resilient contact structures extend through holes in the substrate.

340. interposer, comprising:

a substrate having a plurality of holes extending from a first surface of the substrate to a second surface of the substrate;

a plurality of contact structures, each contact structure disposed within a corresponding hole; and

means for supporting the contact structures within the holes.

341. Interposer, according to

claim 340

, wherein:

the contact structures are resilient contact structures.

342. Interposer, according to

claim 340

, wherein:

the means for supporting is an elastomeric material.

343. Interposer, according to

claim 342

, wherein:

at least a portion of the elastomeric material is electrically conductive.

344. Interposer, according to

claim 340

, further comprising:

a metallic surface within each hole; and

wherein;

the means for supporting is solder.

345. Interposer, according to

claim 340

, wherein:

the substrate is metallic, and is overcoated with an insulating material.

346. Method of manufacturing shaped contact structures, comprising:

mounting a plurality of free-standing wire stems to a substrate with a first mechanism; and

shaping the wire stems with a second mechanism which is external to the first mechanism.

347. Semiconductor package, comprising:

a first insulating layer;

a first conductive layer disposed on a first surface of the first insulating layer and patterned to have a first plurality of conductive traces;

a second insulating layer;

a second conductive layer disposed on a first surface of the second insulating layer and patterned to have a second plurality of conductive traces;

the first conductive layer being in contact with the second insulating layer;

the second conductive and insulating layers are arranged and disposed so that outer portions of the first plurality of conductive traces are exposed;

a first plurality of electrical contact structures mounted to outer portions of the first plurality of conductive traces; and

a second plurality of electrical contact structures mounted to the second plurality of conductive traces.

348. Semiconductor package, according to

claim 347

, wherein:

the first plurality of electrical contact structures =extend to a plane; and

the second plurality of electrical contact structures extend to the plane.

349. Semiconductor package, according to

claim 347

, wherein:

the first plurality of electrical contact structures are resilient contact structures; and

the second plurality of electrical contact structures are resilient contact structures.

350. Semiconductor package, according to

claim 347

, further comprising:

means for receiving a semiconductor device;

wherein;

the second conductive and insulating layers are arranged and disposed so that inner portions of the first plurality of conductive traces are exposed for connecting to a semiconductor device; and

further comprising;

means for connecting the semiconductor device to the exposed inner portions of the first plurality of conductive traces; and

means for connecting the semiconductor device to the second plurality of conductive traces.

a first plurality of electrical contact structures mounted to outer portions of the first plurality of conductive traces; and

a second plurality of electrical contact structures mounted to the second plurality of conductive traces.

351. Semiconductor device, comprising:

a semiconductor die having a front surface and a back surface;

a plurality of free-standing interconnect structures mounted to the front surface of the semiconductor die; and

a plurality of free-standing heat-dissipating structures mounted to the back surface of the semiconductor die.

352. Semiconductor device, according to

claim 351

, wherein:

the interconnect structures are resilient contact structures.

353. Semiconductor device, according to

claim 351

, wherein:

the interconnect structures are compliant contact structures.

354. Semiconductor device, according to

claim 351

, wherein:

the free-standing heat-dissipating structures are wires mounted to the back surface of the semiconductor die.

355. Semiconductor device, according to

claim 351

, wherein:

the freestanding interconnect structures are of a first material; and

the free-standing heat-dissipating structures are of a second material which is different from the first material.

356. Semiconductor device, according to

claim 355

, wherein:

the free-standing interconnect structures and the free-standing heat-dissipating structures are overcoated with a common material.

357. Semiconductor device, according to

claim 351

, further comprising:

a layer of a metallic material disposed between the free-standing heat-dissipating structures and the back surface of the semiconductor die.

the interconnect structures are resilient contact structures.

358. Semiconductor device, comprising:

a semiconductor die having a front surface and a back surface; and

a plurality of free-standing resilient contact structures mounted to the front surface of the semiconductor die.

359. Semiconductor device, according to

claim 358

, further comprising:

conductive pads disposed on the front surface of the semiconductor die; and

wherein;

one contact structure is mounted to each conductive pad.

360. Semiconductor device, according to

claim 358

, wherein the resilient contact structures each comprise:

a wire stem bonded at one end to the front surface of the semiconductor die and configured to have a springable shape; and

an overcoat material applied over the wire stem and over a portion of the front surface of the semiconductor die.

361. Semiconductor device, according to

claim 358

, wherein:

the resilient contact structures are compliant.

362. Method of assembling an electronic assembly, comprising:

preparing a first wiring substrate with a first plurality of semiconductor devices mounted to the first wiring substrate;

preparing a second wiring substrate with a second plurality of semiconductor devices mounted to the second wiring substrate;

the second wiring substrate has electrical contact structures mounted thereto for connecting to contact pads on the first wiring substrate; and

the first and second wiring substrates are stacked, one atop the other, and are interconnected to one another with the electrical contact structures.

363. Method, according to

claim 362

, wherein:

the first wiring substrate has two sides;

the second wiring substrate has two sides;

the first plurality of semiconductor devices are mounted to both sides of the first wiring substrate; and

the second plurality of semiconductor devices are mounted to both sides of the second wiring substrate.

364. Method, according to

claim 362

, further comprising:

a first plurality of resilient contact structures electrically interconnecting the first plurality of semiconductor devices to the first wiring substrate; and

a second plurality of resilient contact structures electrically interconnecting the second plurality of semiconductor devices to the second wiring substrate.

365. Method of mounting a free-standing contact structure to an electronic component, comprising:

providing a pierceable mass of conductive material on a terminal on an electronic component;

inserting an end of a wire into the conductive material;

severing the wire to be free-standing; and

overcoating the wire and the mass with a conductive, metallic material.

366. Method, according to

claim 365

, wherein:

the mass of conductive material is solder.

367. Method, according to

claim 365

, wherein:

the mass of conductive material is conductive epoxy.

368. Method, according to

claim 365

, wherein:

the overcoating is performed by plating.

369. Method of performing wirebonding, comprising:

bonding a bond wire to a terminal with a capillary;

playing the bond wire out of the capillary;

severing the bond wire with a discharge from an electrode; and

while severing the bond wire, illuminating at least one of the electrode and the bond wire with ultraviolet light.

370. Method, according to

claim 369

, further comprising:

prior to severing the bond wire, configuring the bond wire to have a springable shape.

371. Method of forming a ball at an end of a wirebond wire, comprising:

causing an electrical discharge between an electrode and a bond wire; and

while causing the electrical discharge, illuminating at least one of the electrode and the bond wire with ultraviolet light.

372. Method of performing wirebonding, comprising:

bonding a bond wire to a terminal with a capillary;

playing the bond wire out of the capillary;

while playing the bond wire out of the capillary, providing a gas flow within the capillary.

373. Method, according to

claim 372

, further comprising:

while playing the bond wire out of the capillary, configuring the bond wire to have a springable shape.

374. Method of making engineering changes in an interposer having a first plurality of contact structures extending from a first side of a substrate and a second plurality of contact structures extending from a second side of the substrate, comprising:

providing a plurality of conductive traces on at least one side of the substrate; and

routing the conductive traces so as to interconnect selected ones of the first plurality of contact structures with selected ones of the second plurality of contact structures.