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Method and structure for reducing leakage currents of active area diodes and source/drain diffusions

  • US 20010023095A1
  • Filed: 05/22/2001
  • Published: 09/20/2001
  • Est. Priority Date: 03/03/2000
  • Status: Active Grant
First Claim
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1. A method of providing isolation between adjacent regions of an integrated circuit comprising the steps of:

  • selecting a circuit layout for fabrication of said integrated circuit on a substrate, including defining adjacent substrate locations for a first region and a second region for which leakage current from said second region to said substrate is undesired during operation of said integrated circuit, at least said second region being an active region within which a dopant is to be introduced;

    forming a guard layer on said substrate such that said guard layer resides on a peripheral portion of said second region, said peripheral portion of said second region extending along an edge of said first region; and

    introducing said dopant into said second region to establish predetermined electrical characteristics within said second region, said guard layer inhibiting introduction of said dopant into said peripheral portion, thereby leaving a transition strip within said second region and along said edge of said first region.

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