Field emmision type cold cathode device, manufacturing method thereof and vacuum micro device

• US 20010025962A1
• Filed: 03/19/2001
• Published: 10/04/2001
• Est. Priority Date: 03/31/2000
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Nakamoto, Masayuki
• Granted Patent: US 6,664,727 B2
• Time in Patent Office: Days
• US Class Current: 257/137
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H01J 1/304 Field-emissive cathodes
• CPC Class Codes: H01J 2201/30403 characterised by the emitter shape
• CPC Class Codes: H01J 2201/30469 Carbon nanotubes (CNTs)
• CPC Class Codes: H01J 2201/319 Circuit elements associated with the emitters by direct integration
• CPC Class Codes: H01J 9/025 of field emission cathodes
• CPC Class Codes: Y10S 977/734 Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
• CPC Class Codes: Y10S 977/742 Carbon nanotubes, CNTs
• CPC Class Codes: Y10S 977/842 for carbon nanotubes or fullerenes
• CPC Class Codes: Y10S 977/939 Electron emitter, e.g. spindt emitter tip coated with nanoparticles
• CPC Class Codes: Y10T 428/30 Self-sustaining carbon mass or layer with impregnant or other layer
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

A field emission type cold cathode device comprises a substrate, and a metal plating layer formed on the substrate, the metal plating layer contains at least one carbon structure selected from a group of fullerenes and carbon nanotubes, the carbon structure is stuck out from the metal plating layer and a part of the carbon structure is buried in the metal plating layer.

Claims

1. A field emission type cold cathode device comprising:

a substrate; and

a metal plating layer formed on said substrate;

wherein said metal plating layer contains at least one carbon structure selected from a group of fullerenes and carbon nanotubes, said carbon structure is stuck out from said metal plating layer and a part of said carbon structure is buried in said metal plating layer.

2. A field emission type cold cathode device according to

claim 1

, further comprising:

a conductive layer formed between said substrate and said metal plating layer.

3. The field emission type cold cathode device according to

claim 1

, wherein said metal plating layer is selected from a group of nickel, chromium and copper.

4. The field emission type cold cathode device according to

claim 1

, wherein said metal plating layer is formed by either electroplating processing or electroless plating processing.

5. The field emission type cold cathode device according to

claim 1

, wherein said carbon nanotubes having a conductive material inside.

6. The field emission type cold cathode device according to

claim 5

, wherein said conductive material is a content of a plating liquid.

7. The field emission type cold cathode device according to

claim 5

, wherein said conductive material is selected from a group of Mo, Ta, W, Ni, Cr, Fe, Co, Cu, Si, LaB₆, AlN, GaN, carbon, graphite and diamond.

8. The field emission type cold cathode device according to

claim 1

, wherein said metal plating layer contains an additive material which increases resistance of said metal plating layer.

9. The field emission type cold cathode device according to

claim 8

, wherein said additive material is selected from a group of boron, phosphorus and polytetrafluoroethylene.

10. A vacuum micro device comprising:

a substrate;

a metal plating layer formed on said substrate, said metal plating layer containing at least one carbon structure selected from a group of fullerenes and carbon nanotubes, and said carbon structure being stuck out from said metal plating layer and a part of said carbon structure being buried in said metal plating layer; and

an electrode disposed separately from said substrate, said electrode applied a higher electrical potential than an electrical potential applied to said metal plating layer.

11. A vacuum micro device according to

claim 10

, further comprising:

a conductive layer formed between said substrate and said metal plating layer.

12. A vacuum micro device comprising:

a first substrate;

a conductive layer formed on said first substrate;

a metal plating layer formed on said conductive layer, said metal plating layer containing at least one carbon structure selected from a group of fullerenes and carbon nanotubes, and said carbon structure being stuck out from said metal plating layer and a part of said carbon structure being buried in said metal plating layer;

a second substrate opposed to said first substrate;

an electrode formed on said second substrate, said electrode applied a higher electrical potential than an electrical potential applied to said metal plating layer; and

a luminescent material formed on said electrode

13. A vacuum micro device according to

claim 12

, further comprising:

an insulation layer formed on said substrate; and

a gate electrode formed on said insulation layer and between said metal plating layer and said electrode.

14. A manufacturing method of field emission type cold cathode device comprising:

immersing a substrate in a plating liquid containing at least one carbon structure selected from a group of fullerenes and carbon nanotubes; and

forming a metal plating layer on said conductive layer, wherein said carbon structure is stuck out from said metal plating layer and a part of said carbon structure is buried in said metal plating layer.

15. A manufacturing method of field emission type cold cathode device according to

claim 14

, further comprising:

forming a conductive layer on a substrate before immersing said substrate.

16. The manufacturing method according to

claim 14

, wherein said metal plating layer is formed by either electroplating processing or electroless plating processing.

17. A manufacturing method of field emission type cold cathode device comprising:

forming a conductive layer on a first substrate having concaves;

immersing said first substrate in a plating liquid containing at least one carbon structure selected from a group of fullerenes and carbon nanotubes;

forming a metal plating layer on said conductive layer, said carbon structure being stuck out from said metal plating layer and a part of said carbon structure being buried in said metal plating layer;

pressing a second substrate to said first substrate sandwiching said metal plating layer; and

removing said first substrate from said second substrate leaving said metal plating layer on said second substrate.

18. The manufacturing method according to

claim 17

, wherein said metal plating layer is formed by either electroplating processing or electroless plating processing.