Semiconductor device and method of manufacturing the same
First Claim
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1. A semiconductor device, comprising:
- a semiconductor substrate;
an insulating film formed on said semiconductor substrate and a gate electrode formed on said insulating film;
source-drain regions formed in said semiconductor substrate; and
a metal oxide layer formed selectively on said gate electrode;
wherein said gate electrode is formed of a first metal, and said metal oxide layer contains a second metal having a reduction amount in a Gibbs standard free energy in forming an oxide larger than that of said first metal.
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Abstract
Disclosed is a semiconductor device, comprising a semiconductor substrate, an insulating film and a gate electrode formed on the semiconductor substrate, source-drain regions formed in the semiconductor substrate, and a metal oxide layer formed selectively on the gate electrode. The gate electrode is formed of a first metal, and the metal oxide layer contains a second metal having a reduction amount of a Gibbs standard free energy in forming an oxide that is larger than that of the first metal.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate;
an insulating film formed on said semiconductor substrate and a gate electrode formed on said insulating film;
source-drain regions formed in said semiconductor substrate; and
a metal oxide layer formed selectively on said gate electrode;
wherein said gate electrode is formed of a first metal, and said metal oxide layer contains a second metal having a reduction amount in a Gibbs standard free energy in forming an oxide larger than that of said first metal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode containing a first metal on a semiconductor substrate with an insulating film interposed therebetween;
forming source-drain regions in said semiconductor substrate; and
selectively forming a metal oxide layer containing a second metal on said gate electrode;
wherein said second metal has a reduction amount in a Gibbs standard free energy in forming an oxide larger than that of said first metal. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification