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Method for forming interconnect structure in semiconductor device

  • US 20010027008A1
  • Filed: 02/05/2001
  • Published: 10/04/2001
  • Est. Priority Date: 02/04/2000
  • Status: Abandoned Application
First Claim
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1. A method for fabricating a semiconductor device comprising the steps of:

  • forming a first trench and a second trench in a surface of a dielectric film, the second trench having a width larger than a width of the first trench and having therein a slit wall extending along the second trench on a bottom of the second trench;

    depositing a conductive layer on the dielectric film including the first and second trenches; and

    polishing the conductive layer until a surface of the dielectric film is exposed, to leave the conductive layer in the first and second trenches as interconnect layers.

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