Integrated capacitor-like battery and associated method

• US 20010032666A1
• Filed: 03/23/2001
• Published: 10/25/2001
• Est. Priority Date: 03/24/2000
• Status: Abandoned Application

• Current Assignee: Cymbet Corporation
• Original Assignee: Inegrated Power Solutions Incorporated
• Inventors: Yan, Jenn-Feng, Klaassen, Jody Jon, Jenson, Mark Lynn
• Application Number:
  US09/815,621
• Publication Number:
  US 20010032666A1
• Time in Patent Office: Days
• US Class Current: 136/256
• CPC Class Codes: A61N 1/3787 from an external energy source
• CPC Class Codes: C23C 14/0031 Bombardment of substrates by reactive ion beams
• CPC Class Codes: C23C 14/0676 Oxynitrides
• CPC Class Codes: C23C 14/08 Oxides C23C14/10 takes precedence
• CPC Class Codes: C23C 16/047 using irradiation by energy or particles
• CPC Class Codes: G02F 1/13306 Circuit arrangements or driving methods for the control of single liquid crystal cells G02F1/132, G02F1/133382 take precedence
• CPC Class Codes: G02F 1/13324 Circuits comprising solar cells
• CPC Class Codes: H01G 11/08 Structural combinations, e.g. assembly or connection, of hybrid or EDL capacitors with other electric components, at least one hybrid or EDL capacitor being the main component
• CPC Class Codes: H01G 11/26 characterised by their structure, e.g. multi-layered, porosity or surface features
• CPC Class Codes: H01G 11/56 Solid electrolytes, e.g. gels; Additives therein
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49109 outside the semiconductor or solid-state body
• CPC Class Codes: H01L 23/58 Structural electrical arrangements for semiconductor devices not otherwise provided for , e.g. in combination with batteries H01L23/49593, H01L23/49596 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 31/073 comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
• CPC Class Codes: H01L 31/1828 : the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
• CPC Class Codes: H01M 10/0436 : Small-sized flat cells or batteries for portable equipment
• CPC Class Codes: H01M 10/0472 : Vertically superposed cells with vertically disposed plates
• CPC Class Codes: H01M 10/052 : Li-accumulators
• CPC Class Codes: H01M 10/0525 : Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
• CPC Class Codes: H01M 10/0562 : Solid materials
• CPC Class Codes: H01M 10/058 : Construction or manufacture
• CPC Class Codes: H01M 10/0585 : of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
• CPC Class Codes: H01M 10/42 : Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells H01M10/60 takes precedence
• CPC Class Codes: H01M 10/425 : Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing printed circuits H05K1/00
• CPC Class Codes: H01M 10/4257 : Smart batteries, e.g. electronic circuits inside the housing of the cells or batteries
• CPC Class Codes: H01M 10/4264 : with capacitors
• CPC Class Codes: H01M 10/44 : Methods for charging or discharging circuits for charging H02J7/00
• CPC Class Codes: H01M 10/46 : Accumulators structurally combined with charging apparatus circuits for charging H02J7/00
• CPC Class Codes: H01M 10/465 : with solar battery as charging system
• CPC Class Codes: H01M 14/00 : Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
• CPC Class Codes: H01M 14/005 : Photoelectrochemical storage cells light sensitive devices H01G9/20, semiconductors sensitive to light H01L31/00
• CPC Class Codes: H01M 2004/021 : Physical characteristics, e.g. porosity, surface area
• CPC Class Codes: H01M 2008/1293 : Fuel cells with solid oxide electrolytes
• CPC Class Codes: H01M 4/0421 : involving vapour deposition
• CPC Class Codes: H01M 4/0423 : Physical vapour deposition
• CPC Class Codes: H01M 4/0426 : Sputtering
• CPC Class Codes: H01M 4/1391 : of electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
• CPC Class Codes: H01M 4/1393 : of electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
• CPC Class Codes: H01M 4/1397 : of electrodes based on inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy
• CPC Class Codes: H01M 4/382 : Lithium H01M4/405 takes precedence
• CPC Class Codes: H01M 4/405 : Alloys based on lithium
• CPC Class Codes: H01M 4/483 : for non-aqueous cells H01M4/485 takes precedence
• CPC Class Codes: H01M 4/581 : Chalcogenides or intercalation compounds thereof
• CPC Class Codes: H01M 4/5825 : Oxygenated metallic salts or polyanionic structures, e.g. borates, phosphates, silicates, olivines
• CPC Class Codes: H01M 4/587 : for inserting or intercalating light metals
• CPC Class Codes: H01M 4/8885 : Sintering or firing
• CPC Class Codes: H01M 4/9016 : Oxides, hydroxides or oxygenated metallic salts
• CPC Class Codes: H01M 50/103 : prismatic or rectangular H01M50/109, H01M50/11 take precedence
• CPC Class Codes: H01M 50/209 : adapted for prismatic or rectangular cells H01M50/216 takes precedence
• CPC Class Codes: H01M 50/403 : Manufacturing processes of separators, membranes or diaphragms
• CPC Class Codes: H01M 6/185 : with oxides, hydroxides or oxysalts as solid electrolytes
• CPC Class Codes: H01M 6/186 : Only oxysalts-containing solid electrolytes
• CPC Class Codes: H01M 6/188 : Processes of manufacture
• CPC Class Codes: H01M 6/40 : Printed batteries , e.g. thin film batteries
• CPC Class Codes: H01M 6/42 : Grouping of primary cells into batteries H01M6/40 takes precedence
• CPC Class Codes: H01M 8/1007 : with both reactants being gaseous or vaporised H01M8/12 takes precedence
• CPC Class Codes: H01M 8/1286 : Fuel cells applied on a support, e.g. miniature fuel cells deposited on silica supports
• CPC Class Codes: H04M 1/0262 : for a battery compartment
• CPC Class Codes: H05K 1/16 : incorporating printed electric components, e.g. printed resistor, capacitor, inductor
• CPC Class Codes: Y02E 10/543 : Solar cells from Group II-VI materials
• CPC Class Codes: Y02E 60/10 : Energy storage using batteries
• CPC Class Codes: Y02E 60/13 : Energy storage using capacitors
• CPC Class Codes: Y02E 60/50 : Fuel cells
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10S 117/902 : Specified orientation, shape, crystallography, or size of seed or substrate
• CPC Class Codes: Y10T 29/49108 : Electric battery cell making
• CPC Class Codes: Y10T 29/49114 : including adhesively bonding
• CPC Class Codes: Y10T 29/49115 : including coating or impregnating
• CPC Class Codes: Y10T 29/4913 : Assembling to base an electrical component, e.g., capacitor, etc.
• CPC Class Codes: Y10T 29/5313 : Means to assemble electrical device
• CPC Class Codes: Y10T 29/53135 : Storage cell or battery

Abstract

A method and system for fabricating solid-state energy-storage and energy-conversion devices including fabrication of films for devices without an anneal step, especially for the fabrication of supercapacitors and photovoltaic cells. A film is fabricated by depositing a first material layer to a location. Energy is supplied directly to the material forming the film. The energy can be in the form of energized ions of a second material. Supplying energy directly to the material and/or the film being deposited assists the growth of the crystalline structure of the film and controls stoichiometry.

Claims

1. A supercapacitor, comprising:

a substrate;

a solid-state, electrode first film on the substrate;

a solid-state, electrolyte second film on the first electrode film; and

a solid-state, electrode second film on the electrolyte.

2. The supercapacitor of

claim 1

, wherein the working voltage is greater than 5 volts.

3. The supercapacitor of

claim 1

, wherein the electrolyte second film is less than about 5,000 Angstroms thick.

4. The supercapacitor of

claim 1

, wherein the electrolyte second film is less than about 1,000 Angstroms thick.

5. The supercapacitor of

claim 1

, wherein the electrolyte second film is less than about 500 Angstroms thick.

6. The supercapacitor of

claim 1

, wherein the electrolyte second film is less than about 250 Angstroms thick.

7. The supercapacitor of

claim 1

, wherein the electrode first film is a metal oxide.

8. The supercapacitor of

claim 1

, wherein the electrode first film is a RuO₂.

9. The supercapacitor of

claim 1

, wherein the electrode third film is a metal oxide.

10. The supercapacitor of

claim 1

, wherein the electrode third film is a RuO₂.

11. The supercapacitor of

claim 1

, wherein both the first film and the third film are formed of lithium intercalation material.

12. The supercapacitor of

claim 1

, wherein the first film and the third film each have a highly ordered crystal structure that provides superior energy charge/discharge rates and electrical energy density.

13. The supercapacitor of

claim 1

, wherein at least one of the first film and the second film include lattice planes that are essentially perpendicular to a boundary with the electrolyte second film.

14. The supercapacitor of

claim 1

, wherein the substrate has a thermal degradation temperature of less than 400 degrees Celsius.

15. The supercapacitor of

claim 1

, wherein the substrate has a thermal degradation temperature of less than 200 degrees Celsius.

16. The supercapacitor of

claim 1

, wherein the substrate has a thermal degradation temperature of less than 100 degrees Celsius.

17. The supercapacitor of

claim 1

, wherein the first film is a non-annealed electrode having a crystallite size of greater than about 240 Angstroms.

18. The supercapacitor of

claim 17

, wherein the first film is a non-annealed electrode film having a crystalline orientation with the lattice planes essentially perpendicular to a boundary between the non-annealed electrode film and the electrolyte film.

19. The supercapacitor of

claim 1

, wherein the third film has a crystallite size of greater than about 240 Å

.

20. The supercapacitor of

claim 19

, wherein the third film is an electrode film having a crystalline orientation with the lattice planes essentially perpendicular to a boundary between the electrode film and the electrolyte second film.

21. The supercapacitor of

claim 1

, wherein the electrolyte second film has an ordered structure that allows higher ion diffusion rates for enhancing the charge/discharge characteristics of the supercapacitor.

22. A method of fabricating a supercapacitor, comprising:

providing a substrate;

forming a solid-state first electrode film on the substrate;

forming a solid-state electrolyte second film on the first electrode film, including;

(a) depositing an electrolyte material to a location on the first electrode film, and

(b) supplying energized ions of a second material adjacent the location to control growth of a structure of the electrode material at the location; and

forming a solid-state second electrode third film.

23. The method of

claim 22

, wherein depositing the primary material includes depositing lithium phosphorus oxynitride as the primary material.

30. The method of

claim 22

, wherein supplying energized ions includes supplying ions having an energy within the range of about 5 to about 3000 eV.

31. The method of

claim 30

, wherein supplying energized ions includes supplying ions from a source gas including one or more of O₂ and N₂.

32. The method of

claim 30

, wherein supplying energized ions includes supplying ions from a source gas including one or more of argon, xenon, helium, neon, and krypton.

33. The method of

claim 22

, wherein supplying energized ions includes supplying ions having an energy within the range of about 5 to about 200 eV.

34. The method of

claim 22

, wherein supplying energized ions includes supplying ions having an energy within the range of about 10 eV to about 500 eV.

35. The method of

claim 22

, wherein supplying energized ions includes supplying ions having an energy within the range of about 60 eV to about 150 eV.

36. The method of

claim 22

, wherein supplying energized ions includes supplying ions having an energy of about 140 eV.

37. The method of

claim 22

, wherein depositing the electrolyte second film includes using chemical vapor deposition to direct the primary material to the location on the substrate.

38. The method of

claim 22

, wherein supplying energized ions includes controlling stoichiometry of a growing electrolyte film.

39. The method of

claim 22

, wherein depositing the electrolyte film includes using physical vapor deposition to direct the electrolyte material to the location on the substrate.

24. The method of 22, wherein forming the solid-state, first electrode film includes:

depositing an electrode material to a location on the substrate, and supplying energized ions of a second material adjacent the location to control growth of a crystalline structure of the electrode material at the location.

25. The method of 24, wherein depositing the electrode material includes depositing a metal oxide.

26. The method of 24, wherein depositing the electrode material includes depositing RuO₂.

27. The method of 22, wherein forming the solid-state, electrode second film includes:

depositing an electrode material to a location on the substrate, and supplying energized ions of a second material adjacent the location to control growth of a crystalline structure of the electrode material at the location.

28. The method of 27, wherein depositing the electrode material includes depositing a metal oxide.

29. The method of 27, wherein depositing the electrode material includes depositing RuO₂.

40. A method of fabricating a photovoltaic device, comprising:

providing a substrate;

forming an electrode first film on the substrate;

forming a semiconductor second film on the electrode first film;

forming a semiconductor third film on the semiconductor second film; and

forming an electrode fourth film on the semiconductor third, film wherein one of forming the second film and forming the third film includes;

depositing semiconductor material using a deposition source; and

supplying energy to the semiconductor material to deposit the semiconductor material into a desired film structure.

41. The method of

claim 40

, wherein supplying energy includes supplying energized particles having energy of greater than about 5 eV.

42. The method of

claim 40

, wherein supplying energy includes supplying energized particles having energy of less than about 3000 eV.

43. The method of

claim 40

, wherein supplying energy includes supplying energized particles having energy in the range of about 5 eV to about 500 eV.

44. The method of

claim 40

, wherein supplying energy includes supplying energized particles having energy in the range of about 5 eV to about 250 eV.

45. The method of

claim 40

, wherein supplying energy includes supplying energized particles having energy in the range of about 10 eV to about 200 eV.

46. The method of

claim 40

, wherein supplying energy includes supplying energized particles having energy in the range of about 20 eV to about 40 eV.

47. The method of

claim 40

, wherein forming the second film includes depositing CdS.

48. The method of

claim 40

, wherein forming the third film includes depositing CdTe.

49. The method of

claim 40

, wherein forming the second film includes the supplying energy, and wherein the supplying energy includes supplying ionized sulfur.

50. The method of

claim 49

, wherein forming the second film includes depositing the cadmium and reacting the cadmium with the ionized sulfur.

51. The method of

claim 40

, wherein forming the third film includes the supplying energy, and wherein the supplying energy includes supplying energized ions.

52. The method of

claim 51

, wherein forming the third film includes depositing the cadmium.

53. The method of

claim 40

, wherein supplying energy includes supplying ions simultaneously with depositing material from the deposition source.

54. The method of

claim 40

, wherein supplying energy includes supplying oxygen ions.

55. The method of

claim 40

, wherein supplying energy includes supplying a noble gas ions.

56. The method of

claim 40

, wherein the substrate is not heated during forming the second film or the third film.

57. The method of

claim 40

, wherein forming the semiconductor third film on the semiconductor second film includes depositing a high quality first region and then depositing a second highly doped region on the first region.

58. The method of

claim 40

, wherein the one of forming the second film and forming the third film includes providing energy to the semiconductor material being deposited by only means sending the semiconductor material toward the cell and by the means supplying energy.

59. A photovoltaic cell, comprising:

an essentially transparent substrate;

an essentially transparent electrode first film on the substrate

a semiconductor second film on the electrode first film;

a semiconductor third film on the semiconductor second film; and

an electrode fourth film on the semiconductor third film, wherein the third film includes a high quality first region adjacent to the second film and a highly doped second region remote from the second film, and the first region and the second film form a pn junction of the photovoltaic cell.

60. The device of

claim 59

, wherein the second film has a thickness of about 50 nanometers to about 100 nanometers.

61. The device of

claim 59

, wherein the first region of the third film has a thickness of about 50 nanometers to about 100 nanometers.

62. The device of

claim 61

, wherein the second region of the third film has a thickness of greater than about 1000 nanometers.

63. The device of

claim 59

, wherein the high quality first region of the third film is formed by providing energized ions while material is deposited on the second film to grow the first region such that the first region has a reduced number of defects.

64. The device of

claim 63

, wherein the first region of the third film has large crystal sizes.

65. The device of

claim 64

, wherein the first region includes P-doped CdTe.

66. The device of

claim 59

, wherein the substrate, first film, second film third film, and fourth film provide an efficiency of greater than about 10 percent.

67. The device of

claim 59

, wherein at least one of the substrate, the first film and the fourth film have a thermal degradation temperature of less than about 500 degrees Celsius.

68. A system for fabricating photovoltaic cells, comprising:

chamber in which a substrate on which the cell is to be formed,

deposition apparatus connected to the chamber, the deposition apparatus directing material to be deposited toward the substrate, and

means for providing energy to the material while the material is forming a film on the substrate.

69. The system of

claim 68

, wherein the means for providing energy includes a directed energy source that does not appreciable heat the substrate.

70. The system of

claim 68

, wherein the chamber has a temperature of less than about 300 degrees Celsius.

71. The system of

claim 68

, wherein the chamber has a temperature of less than about 250 degrees Celsius.

72. The system of

claim 68

, wherein the chamber is adapted to hold the substrate below about 500 degrees Celsius.

73. The system of

claim 68

, wherein the chamber is adapted to hold the substrate below about 300 degrees Celsius.

74. The system of

claim 68

, wherein the chamber is adapted to hold the substrate below about 200 degrees Celsius.

75. A system for fabricating photovoltaic cells, comprising:

a chamber in which a substrate on which the cell is to be formed,

a deposition apparatus connected to the chamber, the deposition apparatus directing material to be deposited toward the substrate, and

an energy source directing energy to the material while the material is forming a film on the substrate.

76. The system of

claim 75

, wherein the energy source is an ion beam source.

77. The system of

claim 76

, wherein the ion beam source produces energized ions having energy of about 3 eV to about 3,000 eV.