Reflective liquid crystal display device and the fabricating method thereof

• US 20010038428A1
• Filed: 02/09/2001
• Published: 11/08/2001
• Est. Priority Date: 02/10/2000
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Philips LCD America (LG Display Co., Ltd.)
• Inventors: Lim, Byoung-Ho, Lee, Jae-Gu
• Granted Patent: US 6,490,019 B2
• Time in Patent Office: Days
• US Class Current: 349/113
• CPC Class Codes: G02F 1/133553 Reflecting elements associated to illuminating devices G02F1/133605
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer

Abstract

The invention provides a reflective liquid crystal display device having a semi-conic concave portion in its reflective electrode. The semi-conic concave portion increases a reflection area of the reflective electrode and prevents open-line defects of the reflective electrode. The inventive reflective liquid crystal display device includes first and second substrates; a liquid crystal layer between the first and second substrates; a first insulating layer on the first substrate; gate electrode and gate line on the first substrate; a second insulating layer covering the gate electrode and gate line; an active layer on the second insulating layer, the active layer overlapping the gate electrode; source and drain electrodes on the active layer; a data line on the second insulating layer; a third insulating layer covering the source and drain electrodes and the data line, the third insulating layer including a drain contact hole over the drain electrode; a concave portion in the passivation layer, the concave portion communicating with the first and second insulating layers and having an inclined surface with respect to the substrate; and a reflective electrode formed on the passivation layer and the concave portion.

Claims

1. A reflective liquid crystal display device comprising:

first and second substrates;

a liquid crystal layer between the first and second substrates;

a first insulating layer on the first substrate;

gate electrode and gate line on the first substrate;

a second insulating layer covering the gate electrode and gate line;

an active layer on the second insulating layer, the active layer overlapping the gate electrode;

source and drain electrodes on the active layer;

a data line on the second insulating layer;

a third insulating layer covering the source and drain electrodes and the data line, the third insulating layer including a drain contact hole over the drain electrode;

a concave portion in the passivation layer, the concave portion communicating with the first and second insulating layers and having an inclined surface with respect to the substrate; and

a reflective electrode formed on the passivation layer and the concave portion.

2. The device of

claim 1

, wherein the active layer includes an amorphous silicon layer and a doped amorphous silicon layer.

3. The device of

claim 1

, wherein the gate electrode, source electrode, drain electrode, and the reflective electrode include an opaque metal.

4. The device of

claim 3

, wherein the opaque metal is selected from a group consisting of chromium (Cr), molybdenum (Mo), aluminum (Al), titanium (Ti), tin (Sb), tungsten (W), and copper (Cu).

5. The device of

claim 1

, wherein the first and second insulating layer are selected from a group consisting of silicon nitride (SiNe) and silicon oxide (SiO₂).

6. The device of

claim 1

, wherein the third insulating layer is an organic insulating layer.

7. The device of

claim 6

, wherein the organic insulating layer includes benzocyclobutene.

8. The device of

claim 1

, wherein the concave portion has a semi-conic shape

9. A fabricating method for a reflective LCD device, the method comprising:

forming a first insulating layer on an insulated substrate;

forming a gate electrode on the first insulating layer;

forming a second insulating layer on the first insulating layer, the second insulating layer covering the gate electrode;

forming an active layer on the second insulating layer;

forming source and drain electrodes on the active layer;

forming a third insulating layer on the second insulating layer, the third insulating layer covering the source and drain electrodes;

integrally patterning the passivation layer, second insulating layer, and first insulating layer to form a concave portion in the passivation layer; and

forming a reflective layer on the passivation layer and the concave portion.

10. The method of

claim 9

, wherein the first and second insulating layer are selected from a group consisting of silicon nitride (SiNx) and silicon oxide (SiO₂).

11. The method of

claim 9

, wherein the third insulating layer is an organic insulating layer.

12. The method of

claim 11

, wherein the organic insulating layer includes benzocyclobutene.

13. The method of

claim 9

, wherein the gate electrode, source electrode, drain electrode, and the reflective electrode include an opaque metal.

14. The method of

claim 13

, wherein the opaque metal is selected from a group consisting of chromium (Cr), molybdenum (Mo), aluminum (Al), titanium (Ti), tin (Sb), tungsten (W), and copper (Cu).