Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery

• US 20010041423A1
• Filed: 01/26/2001
• Published: 11/15/2001
• Est. Priority Date: 01/27/2000
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Sakaguchi, Kiyofumi, Nakagawa, Katsumi, Yonehara, Takao, Nishida, Shoji
• Granted Patent: US 6,602,767 B2
• Time in Patent Office: Days
• US Class Current: 438/455
• CPC Class Codes: H01L 21/02032 by reclaiming or re-processing
• CPC Class Codes: H01L 21/76259 with separation/delamination along a porous layer
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/182 Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
• CPC Class Codes: H01L 31/1844 comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
• CPC Class Codes: H01L 31/1852 comprising a growth substrate not being an AIIIBV compound
• CPC Class Codes: H01L 31/1892 methods involving the use of temporary, removable substrates
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/546 Polycrystalline silicon PV cells
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A method for transferring a porous layer includes forming a porous layer on one side of a crystalline silicon member by anodization, fixing a supporting substrate onto the surface of the porous layer, and applying force to any one of the supporting substrate and the porous layer, whereby at least part of the porous layer is cleaved from the crystalline silicon member and is transferred onto the supporting substrate. The crystalline silicon member can be recycled and this method is suitable for mass production of semiconductor devices or solar batteries at low cost.

Claims

1. A method for transferring a porous layer comprising:

forming a porous layer on one side of a crystalline silicon member by anodization;

fixing a supporting substrate onto the surface of the porous layer; and

applying force to any one of the supporting substrate and the porous layer, whereby at least part of the porous layer is cleaved from the crystalline silicon member and is transferred onto the supporting substrate.

2. A method for transferring a porous layer according to

claim 1

, wherein the crystalline silicon member is a silicon wafer.

3. A method for transferring a porous layer according to

claim 2

, wherein the silicon wafer is a single-crystal silicon wafer.

4. A method for transferring a porous layer according to

claim 2

, wherein the silicon wafer is a polycrystalline silicon wafer.

5. A method for transferring a porous layer according to

claim 1

, wherein the supporting substrate comprises metallurgical-grade silicon.

6. A method for transferring a porous layer according to

claim 1

, wherein the force is applied by inserting a blade into the porous layer.

7. A method for transferring a porous layer according to

claim 1

, wherein the force is a pull strength applied between the crystalline silicon member and the supporting substrate.

8. A method for transferring a porous layer according to

claim 1

, wherein the force is applied by providing ultrasonic waves to the porous layer.

9. A method for transferring a porous layer according to

claim 1

, wherein a first porous sublayer and a second porous sublayer are formed in that order, to comprise the porous layer.

10. A method for transferring a porous layer according to

claim 9

, wherein the first porous sublayer and the second porous sublayer are formed under different anodization conditions.

11. A method for transferring a porous layer according to

claim 9

, wherein the anodization current when the first porous sublayer is formed is different from the anodization current when the second porous sublayer is formed.

12. A method for transferring a porous layer according to

claim 9

, wherein the porous layer is cleaved at the interface between the first porous sublayer and the second porous sublayer.

13. A method for transferring a porous layer according to

claim 9

, wherein the porous layer is cleaved in the first porous sublayer.

14. A method for transferring a porous layer according to

claim 9

, wherein the porous layer is cleaved in the second porous sublayer.

15. A method for making a semiconductor device comprising:

forming a porous layer on one side of a crystalline silicon member by anodization;

fixing a supporting substrate onto the surface of the porous layer;

applying force to any one of the supporting substrate and the porous layer, whereby at least part of the porous layer is cleaved from the crystalline silicon member and is transferred onto the supporting substrate; and

a crystalline semiconductor layer onto the transferred porous layer.

16. A method for making a semiconductor device according to

claim 15

, wherein the crystalline semiconductor layer is formed by epitaxial growth.

17. A method for making a semiconductor device according to

claim 15

, further comprising a step of forming a semiconductor junction in the crystalline semiconductor layer.

18. A method for making a semiconductor device according to

claim 15

, wherein the crystalline semiconductor layer comprises silicon.

19. A method for making a semiconductor device according to

claim 15

, wherein the crystalline semiconductor layer comprises a compound semiconductor.

20. A method for making a semiconductor device according to any one of

claims 15

to

19

, further comprising a step of forming another porous layer by anodization onto the crystalline semiconductor layer after the prior porous layer is transferred.

21. A method for making a semiconductor device according to

claim 20

, wherein the other porous layer is transferred onto another supporting substrate which is different from the prior supporting substrate.

22. A method for making a solar battery comprising:

forming a porous layer on one side of a crystalline silicon member by anodization;

fixing a supporting substrate onto the surface of the porous layer;

applying force to any one of the supporting substrate and the porous layer, whereby at least part of the porous layer is cleaved from the crystalline silicon member and is transferred onto the supporting substrate; and

forming a crystalline semiconductor layer onto the transferred porous layer.