Surge protection circuit for semiconductor devices

  • US 20010050835A1
  • Filed: 06/06/2001
  • Published: 12/13/2001
  • Est. Priority Date: 06/07/2000
  • Status: Active Grant
First Claim
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1. A surge protection device comprising:

  • a gate electrode embedded in an insulator;

    a source electrode and a drain electrode on said insulator, the source and drain electrodes respectively forming first and second capacitances with the gate electrode; and

    a semiconductor island on said insulator, the island forming a channel region between said source and drain electrodes and a third capacitance with said gate electrode, the third capacitance being smaller than either of said first and second capacitances, said source and drain electrodes being adapted for connection to external circuitry for establishing a low-impedance path when said external circuitry is subjected to a surge potential.

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