Compound semiconductor device and method of manufacturing the same

  • US 20020008248A1
  • Filed: 06/15/2001
  • Published: 01/24/2002
  • Est. Priority Date: 06/15/1998
  • Status: Active Grant
First Claim
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1. A compound semiconductor device comprising:

  • a channel layer formed on a compound semiconductor substrate, and formed of material which has a first donor concentration and a first bandgap;

    a carrier supply layer formed on the channel layer, and formed of material which has a second donor concentration being higher than the first donor concentration and a second bandgap being wider than the first bandgap;

    a first compound semiconductor layer formed on the carrier supply layer, and containing donors in at least one of a lower layer portion and an upper layer portion within a range of impurity concentration of 1×

    1016 to 1×

    1017 atoms/cm3;

    a gate electrode connected to the first compound semiconductor layer;

    a cap layer formed on the first compound semiconductor layer in a source region and a drain region which are formed on both sides of the gate electrode, and formed of material which has a third donor concentration being higher than the first donor concentration and a third bandgap being narrower than the second bandgap;

    a source electrode at least a part of which is formed on the cap layer in the source region; and

    a drain electrode at least a part of which is formed on the cap layer in the drain region.

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