CMOS image sensor and method of manufacture

  • US 20020011611A1
  • Filed: 09/25/2001
  • Published: 01/31/2002
  • Est. Priority Date: 07/07/2000
  • Status: Abandoned Application
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First Claim
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1. A complementary metal-oxide-semiconductor (CMOS) image sensor structure, comprising:

  • a substrate, wherein the substrate is a first conductive type material;

    a sensing region buried within the substrate, wherein the sensing region is a second conductive type material; and

    a dopant region above the sensing region, wherein the dopant region is a first conductive type material.

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