Integrated high resolution image sensor and display on an active matrix array with micro-lens

• US 20020030768A1
• Filed: 11/14/2001
• Published: 03/14/2002
• Est. Priority Date: 03/15/1999
• Status: Abandoned Application

• Current Assignee: I-Wei Wu
• Original Assignee: I-Wei Wu
• Inventors: Wu, I-Wei
• Application Number:
  US09/991,558
• Publication Number:
  US 20020030768A1
• Time in Patent Office: Days
• US Class Current: 349/42
• CPC Class Codes: G02F 1/13318 Circuits comprising a photodetector
• CPC Class Codes: G02F 1/133526 Lenses, e.g. microlenses or Fresnel lenses
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14667 Colour imagers

Abstract

An integrated image sensor and display device includes both display and sensor thin-film transistors as well as image sensors in the active matrix array of a liquid crystal display. The display thin-film transistors and the liquid crystals control the brightness of a displayed image. The sensor thin-film transistors control the operation of the image sensors. A color filter is disposed between two semiconductor substrates of the device. A microlens is placed on the backside of the active matrix array substrate to focus and direct backlight through a display aperture. Another microlens is constructed on the side facing a user to focus and direct the outside image onto the image sensor of the active matrix array.

Claims

1. An integrated image sensor and liquid crystal display device comprising:

a first semiconductor substrate;

a display thin-film transistor formed on said first semiconductor substrate;

a first display electrode connected to said display thin-film transistor, said first display electrode being formed on said first semiconductor substrate;

a sensor thin-film transistor formed on said first semiconductor substrate;

an image sensor connected to said sensor thin-film transistor, said image sensor being formed on said first semiconductor substrate;

a sensor electrode formed above said image sensor;

a liquid crystal layer disposed above said first display electrode and said sensor electrode;

a second display electrode formed on said liquid crystal layer and above said first display electrode;

a second semiconductor substrate covering said second display electrode and said liquid crystal layer; and

a color filter layer disposed between said first and second semiconductor substrates.

2. The integrated image sensor and liquid crystal display device according to claim 1, wherein said display and sensor thin-film transistors are amorphous silicon, polysilicon, CdSe or single crystalline silicon thin-film transistors.

3. The integrated image sensor and liquid crystal display device according to claim 1, said color filter layer being disposed between said second semiconductor substrate and said second display electrode above said display thin-film transistor, and disposed between said semiconductor substrate and said liquid crystal layer above said sensor electrode.

4. The integrated image sensor and liquid crystal display device according to claim 1, said color filter layer being disposed below said liquid crystal layer and above a passivation layer, wherein said first display electrode is formed on said color filter layer above said display thin film transistor, and said sensor electrode is formed below said color filter layer.

5. The integrated image sensor and liquid crystal display device according to claim 1, said color filter layer being disposed below said liquid crystal layer and directly above an insulating layer, wherein said first display electrode is formed on said color filter layer above said display thin film transistor, said sensor electrode is formed below said color filter layer, and said color filter layer also serves as a passivation layer.

6. The integrated image sensor and liquid crystal display device according to claim 1, further comprising a sensor microlens formed above said second semiconductor substrate.

7. The integrated image sensor and liquid crystal display device according to claim 6, said sensor microlens being formed by coating a photo non-sensitive material on said second substrate or on a cover sheet substrate of said second substrate, said photo non-sensitive material being further patterned by a photo sensitive material.

8. The integrated image sensor and liquid crystal display device according to claim 6, said sensor microlens being formed by diffusing impurities into said second substrate for increasing the index of refraction of a local substrate area as compared to other non-doped area of said second substrate.

9. The integrated image sensor and liquid crystal display device according to claim 1, further comprising a display microlens formed underneath said first semiconductor substrate.

10. The integrated image sensor and liquid crystal display device according to claim 9, said display microlens being formed by coating a photo non-sensitive material on said second substrate or on a cover sheet substrate of said second substrate, said photo non-sensitive material being further patterned by a photo sensitive material.

11. The integrated image sensor and liquid crystal display device according to claim 9, said display microlens being formed by diffusing impurities into said first substrate for increasing the index of refraction of a local substrate area as compared to other non-doped area of said first substrate.