Method for increasing a very-large-scale-integrated (VLSI) capacitor size on bulk silicon and silicon-on-insulator (SOI) wafers and structure formed thereby
First Claim
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1. A method of forming a semiconductor device, comprising:
- forming at least one conductive island having a predetermined sidewall angle in a conductive substrate;
forming a dielectric material over said at least one conductive island;
forming a conductive material over said dielectric material; and
forming a contact to said conductive material and said at least one conductive island.
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Abstract
A method of forming a semiconductor device, includes forming at least one conductive island having a predetermined sidewall angle in a conductive substrate, forming a dielectric material over the at least one island, forming a conductive material over the dielectric material, and forming a contact to the conductive material and the at least one island.
45 Citations
22 Claims
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1. A method of forming a semiconductor device, comprising:
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forming at least one conductive island having a predetermined sidewall angle in a conductive substrate;
forming a dielectric material over said at least one conductive island;
forming a conductive material over said dielectric material; and
forming a contact to said conductive material and said at least one conductive island. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 19)
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18. A method of forming a sub-lithographic pattern in a semiconductor device, comprising:
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using a phase shift mask, forming a plurality of conductive islands having a predetermined sidewall angle in a conductive substrate;
forming a dielectric material over said islands;
forming a conductive material over said dielectric material; and
forming a contact to said conductive material and said islands, wherein a spacing size between adjacent islands is smaller than a width of an island.
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20. A semiconductor device, comprising:
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a conductive substrate;
at least one conductive island having a predetermined sidewall angle formed in said conductive substrate;
a dielectric material formed over said at least one island;
a conductive material formed over said dielectric material; and
a contact formed between said conductive material and said at least one island. - View Dependent Claims (21, 22)
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Specification