RF Power detector

• US 20020044018A1
• Filed: 04/26/2001
• Published: 04/18/2002
• Est. Priority Date: 09/12/2000
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Silicon Laboratories Incorporated
• Inventors: Welland, David R., Paul, Susanne A., Dupuis, Timothy J., Niknejad, Ali M.
• Granted Patent: US 6,727,754 B2
• Time in Patent Office: Days
• US Class Current: 330/254
• CPC Class Codes: H01L 2223/6644 Packaging aspects of high-frequency amplifiers amplifiers per se H03F
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15192 Resurf arrangement of the internal vias
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H03F 1/02 Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
• CPC Class Codes: H03F 2200/387 A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
• CPC Class Codes: H03F 2200/391 the output circuit of an amplifying stage comprising an LC-network
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 3/195 in integrated circuits
• CPC Class Codes: H03F 3/211 using a combination of several amplifiers H03F3/60 takes precedence
• CPC Class Codes: H03F 3/2171 with field-effect devices H03F3/2173 - H03F3/2178 take precedence
• CPC Class Codes: H03F 3/2173 of the bridge type
• CPC Class Codes: H03F 3/2176 : Class E amplifiers
• CPC Class Codes: H03F 3/24 : of transmitter output stages
• CPC Class Codes: H03F 3/30 : Single-ended push-pull [SEPP] amplifiers single-ended sense amplifiers G11C7/067; Phase-splitters therefor
• CPC Class Codes: H03F 3/45179 : using MOSFET transistors as the active amplifying circuit H03F3/45278 takes precedence
• CPC Class Codes: H03F 3/72 : Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
• CPC Class Codes: H03K 17/04163 : in field-effect transistor switches
• CPC Class Codes: H03K 17/6872 : using complementary field-effect transistors
• CPC Class Codes: Y10S 257/904 : with passive components,, e.g. polysilicon resistors

Abstract

A method and apparatus is provided for detecting the output power of an RF power amplifier for purposes of controlling the output power. A circuit for generating an output power control signal includes a power detector to detect the output power of an RF power amplifier. A variable gain amplifier is coupled to the power detector for amplifying the output of the power detector. The value of the generated control signal is a function of the gain of the variable gain amplifier.

Claims

1. A circuit for generating a control signal for controlling the output power of a power amplifier of a wireless device by comprising:

a power detector coupled to the output of the power amplifier for generating a detector output signal; and

a variable gain amplifier coupled to the power detector for amplifying the detector output signal to a desired level, wherein the value of the control signal generated by the circuit is a function of the gain of the variable gain amplifier.

2. The circuit of claim 1, further comprising a conditioning circuit coupled to the variable gain amplifier for conditioning an output of the variable gain amplifier, wherein an output signal of the conditioning circuit is the control signal.

3. The circuit of claim 2, further comprising:

a sense circuit coupled to an output of the variable gain amplifier; and

an op amp having an output and first and second inputs, wherein the first input is coupled to an output of the sense circuit and the second input is coupled to a reference signal for creating a gain control signal at the output of the op amp.

4. The circuit of claim 3, wherein the reference signal is a DC signal.

5. The circuit of claim 3, wherein the gain control signal is used to control the gain of the variable gain amplifier.

6. The circuit of claim 3, wherein the sense circuit is comprised of a first peak detector.

7. The circuit of claim 6, further comprising a second peak detector coupled between the reference signal and the second input of the op amp.

8. The circuit of claim 7, wherein the first and second peak detectors are matched.

9. The circuit of claim 3, wherein the reference signal is an RF signal.

10. The circuit of claim 1, wherein the power detector is comprised of a directional coupler.

11. The circuit of claim 1, wherein the variable gain amplifier is comprised of a multi-stage variable gain amplifier.

12. The circuit of claim 11, wherein the variable gain amplifier is comprised of six stages.

13. The circuit of claim 11, wherein each stage of the variable gain amplifier is controlled by the gain control signal.

14. The circuit of claim 1, wherein the wireless device is a cellular telephone.

15. The circuit of claim 1, wherein the power amplifier and the variable gain amplifier reside together on an integrated circuit.

16. The circuit of claim 15, wherein the integrated circuit is a flip chip semiconductor.

17. The circuit of claim 16, further comprising a ceramic chip carrier for carrying the flip chip semiconductor, wherein one or more components of the circuit reside on the ceramic chip carrier.

18. The circuit of claim 1, wherein the power amplifier further comprises:

a first switching device connected between a first supply voltage and a first output node;

a second switching device connected between a second supply voltage and a second output node; and

an inductance coupled between the first and second output nodes.

20. The power detector of claim 19, wherein the RF power amplifier is a power amplifier for a wireless communication device.

21. The power detector of claim 19, wherein the variable gain amplifier is comprised of a plurality of variable gain amplifiers.

22. The power detector of claim 21, wherein the gain of each of the plurality of variable gain amplifiers is determined by the gain control signal.

23. The power detector of claim 19, wherein the conditioning circuitry compensates for the non-linearity of the variable gain amplifier.

24. The power detector of claim 19, further comprising a second sense circuit coupled between the reference signal and the op amp.

25. The power detector of claim 24, wherein the level detector and the second sense circuit are matched.

26. The power detector of claim 24, further comprising a variable limiter coupled between the second sense circuit and the reference signal for limiting the value of the reference signal to a predetermined value.

28. The method of claim 27, wherein the amplifier is provided by a multi-stage variable linear amplifier.

29. The method of claim 27, wherein the output power is detected using a directional coupler.

30. The method of claim 27, wherein the gain control signal is generated by comparing the amplified first signal to a reference signal.

31. The circuit of claim 1, wherein a gain control signal controls the gain of the variable gain amplifier, the circuit further comprising a conditioning circuit for generating the control signal, wherein the control signal is related to the reciprocal of the gain control signal.

32. The circuit of claim 31, wherein the conditioning circuit further comprises:

a variable gain amplifier stage controlled by the gain control signal; and

sense circuitry combined with a feedback loop, wherein the conditioning circuitry forces an input reference tone level to be equal to the control signal multiplied by the gain of the variable gain amplifier stage.

19. A power detector for an RF power amplifier comprising:

a directional coupler for detecting RF power;

a variable gain amplifier having an input and an output, wherein the input is coupled to the directional coupler;

a sense circuit coupled to the output of the variable gain amplifier for rectifying the output of the variable gain amplifier;

an op amp for generating a gain control signal based on the rectified output of the sense circuit and a reference signal, wherein the gain control signal is provided to the variable gain amplifier to control the gain of the variable gain amplifier; and

conditioning circuitry for conditioning the gain control signal for use in controlling the output power of the RF power amplifier.

27. A method of controlling the output power of an RF power amplifier comprising the steps of:

detecting the output power of the RF power amplifier and generating a first signal from the detected output power;

amplifying the first signal using a variable gain amplifier;

generating a gain control signal from the output of the amplifier and from a reference signal;

using the gain control signal to set the gain of the amplifier;

generating a second signal by conditioning the gain control signal; and

using the second signal to control the output power of the RF power amplifier.

33. An integrated circuit for use with an external directional coupler comprising:

an RF power amplifier formed on the integrated circuit, wherein the integrated circuit is configured such that an external directional coupler can be used to generate a detector signal based on the output power of the RF power amplifier; and

a power detector formed on the same integrated circuit to generate an output signal based on the detector signal.

34. The method of claim 33, further comprising a ceramic chip carrier for carrying the integrated circuit.

35. The method of claim 34, wherein the directional coupler is formed on the ceramic chip carrier.

36. The method of claim 33, wherein the integrated circuit is used for a wireless communication device.