Solar cell substrate, thin-film solar cell, and multi-junction thin-film solar cell

• US 20020050289A1
• Filed: 10/31/2001
• Published: 05/02/2002
• Est. Priority Date: 10/31/2000
• Status: Active Grant

• Current Assignee: Akihisa Matsuda, National Institute of Advanced Industrial Science and Technology (Government of Japan), Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Michio Kondo
• Original Assignee: Akihisa Matsuda, National Institute of Advanced Industrial Science and Technology (Government of Japan), Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Michio Kondo
• Inventors: Matsuda, Akihisa, Nasuno, Yoshiyuki, Wada, Kenji, Kondo, Michio
• Granted Patent: US 6,787,692 B2
• Time in Patent Office: Days
• US Class Current: 136/256
• CPC Class Codes: H01L 31/0236 Special surface textures
• CPC Class Codes: H01L 31/02366 of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
• CPC Class Codes: H01L 31/056 the light-reflecting means being of the back surface reflector [BSR] type
• CPC Class Codes: H01L 31/076 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/077 the devices comprising monocrystalline or polycrystalline materials
• CPC Class Codes: H01L 31/182 Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: Y02E 10/52 PV systems with concentrators
• CPC Class Codes: Y02E 10/546 Polycrystalline silicon PV cells
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10T 428/26 Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

Abstract

A solar cell substrate of the present invention has irregularities on a surface which is in contact with a photo-electric conversion layer, and light is incident on the side of the irregularities. The height of the irregularities is set so that the root mean square height is in a range of 15 nm to 600 nm, and tan θ is in a range of 0.10 to 0.30, where θ is the angle of incline of the surface of the irregularities with respect to an average line of the irregularities. According to this arrangement, the light incident on the irregularities is scattered at the interface. This increases the optical path length and thus the quantity of light absorbed in the photo-electric conversion layer. As a result, photo-electric conversion efficiency can be improved and the photo-electric conversion layer can be made thinner, thereby greatly reducing deposit time and manufacturing cost required for the photo-electric conversion layer. Further, by the foregoing ranges of the height of the irregularities, and tan θ, it is ensured that collision of crystals is not incurred. It is therefore possible to surely prevent deterioration of photo-electric conversion efficiency which is caused by defects.

Claims

1. A solar cell substrate having irregularities on a surface which is in contact with a photo-electric conversion layer, light being incident on the solar cell substrate on the side of the irregularities,

wherein:

a height of the irregularities is set so that a root mean square height is in a range of 15 nm to 600 nm, and tan θ

is in a range of 0.10 to 0.30, where θ

is an angle of incline of a surface of the irregularities with respect to an average line of the irregularities.

2. The solar cell substrate as set forth in claim 1, wherein the irregularities are made of a transparent conductive material.

3. The solar cell substrate as set forth in claim 2, wherein the transparent conductive material chiefly contains zinc oxide.

4. The solar cell substrate as set forth in claim 3, wherein the irregularities are formed by etching the transparent conductive material.

5. A solar cell substrate having irregularities on a surface which is in contact with a photo-electric conversion layer,

wherein:

the irregularities partially have indentations substantially in the form of a hemisphere or circular cone with a diameter in a range of 200 nm to 2000 nm.

6. The solar cell substrate as set forth in claim 5, wherein the indentations are substantially in the form of a hemisphere or circular cone with a diameter in a range of 400 nm to 1200 nm.

7. A thin-film solar cell, comprising:

a solar cell substrate having irregularities on a surface which is in contact with a photo-electric conversion layer, light being incident on the solar cell substrate on the side of the irregularities,

a height of the irregularities being set so that a root mean square height is in a range of 15 nm to 600 nm, and tan θ

in a range of 0.10 to 0.30, where θ

is an angle of incline of a surface of the irregularities with respect to an average line of the irregularities,

said solar cell substrate having the photo-electric conversion layer which is made up of at least one photo-electric conversion element.

8. The thin-film solar cell as set forth in claim 7, wherein a surface opposite the surface in contact with the photo-electric conversion layer has irregularities, and a height of the irregularities is set so that a root mean square height is in a range of 25 nm to 600 nm, and tan θ

in a range of 0.07 to 0.20, where θ

is an angle of incline of a surface of the irregularities with respect to an average line of the irregularities.

9. The thin-film solar cell as set forth in claim 7, wherein an active layer of at least one photo-electric element of the photo-electric conversion layer is made of crystalline silicon or silicon alloy.

10. A solar cell substrate having irregularities on a surface which is in contact with a photo-electric conversion layer, light being incident on the solar cell substrate on the other side of the irregularities,

wherein:

a height of the irregularities is set so that a root mean square height is in a range of 25 nm to 600 nm, and tan θ

is in a range of 0.07 to 0.20, where θ

is an angle of incline of a surface of the irregularities with respect to an average line of the irregularities.

11. The solar cell substrate as set forth in claim 10, wherein the irregularities are made of a transparent conductive material.

12. The solar cell substrate as set forth in claim 11, wherein the transparent conductive material chiefly contains zinc oxide.

13. The solar cell substrate as set forth in claim 12, wherein the irregularities are formed by etching the transparent conductive material.

15. The solar cell substrate as set forth in claim 14, wherein the indentations are substantially in the form of a hemisphere or circular cone with a diameter in a range of 400 nm to 1200 nm.

17. The thin-film solar cell as set forth in claim 16, wherein a surface opposite the surface in contact with the photo-electric conversion layer has irregularities, and a height of the irregularities is set so that a root mean square height is in a range of 15 nm to 600 nm, and tan θ

in a range of 0.10 to 0.30, where θ

is an angle of incline of a surface of the irregularities with respect to an average line of the irregularities.

18. The thin-film solar cell as set forth in claim 16, wherein an active layer of at least one photo-electric element of the photo-electric conversion layer is made of crystalline silicon or silicon alloy.

20. The multi-junction thin-film solar cell as set forth in claim 19, wherein a surface of the substrate opposite the side on which light is incident has irregularities.

21. The multi-junction thin-film solar cell as set forth in claim 19, wherein the irregularities are made of a transparent conductive material.

22. The multi-junction thin-film solar cell as set forth in claim 21, wherein the transparent conductive material chiefly contains zinc oxide.

23. The multi-junction thin-film solar cell as set forth in claim 21, wherein the irregularities are formed by etching the transparent conductive material.

24. The multi-junction thin-film solar cell as set forth in claim 21, wherein a transparent conductive film made of the transparent conductive material is formed by a sputtering method.

25. The multi-junction thin-film solar cell as set forth in claim 21, wherein a transparent conductive film made of the transparent conductive material has a thickness in a range of 1 nm to 50 nm.

27. The multi-junction thin-film solar cell as set forth in claim 26, wherein the indentations are substantially in the form of a hemisphere or circular cone with a diameter in a range of 400 nm to 1200 nm.

28. The multi-junction thin-film solar cell as set forth in claim 26, wherein an active layer of at least one of the photo-electric conversion elements on a surface of the intermediate layer is made of crystalline silicon or silicon alloy.

14. A solar cell substrate having irregularities on a surface which is in contact with a photo-electric conversion layer,

wherein:

the irregularities partially have indentations substantially in the form of a hemisphere or circular cone with a diameter in a range of 200 nm to 2000 nm.

16. A thin-film solar cell, comprising:

a solar cell substrate having irregularities on a surface which is in contact with a photo-electric conversion layer, light being incident on the solar cell substrate on the side of a surface opposite the surface with the irregularities,

a height of the irregularities being set so that a root mean square height is in a range of 25 nm to 600 nm, and tan θ

in a range of 0.07 to 0.20, where θ

is an angle of incline of a surface of the irregularities with respect to an average line of the irregularities,

said solar cell substrate having the photo-electric conversion layer which is made up of at least one photo-electric conversion element.

19. A multi-junction thin-film solar cell, comprising:

a plurality of photo-electric conversion elements on the opposite side of a side of a substrate on which light is incident; and

an intermediate layer, having irregular surfaces, provided on at least one of the photo-electric conversion elements adjacent to one another,

a height of the irregularities of the intermediate layer being set so that a root mean square height is in a range of 25 nm to 600 nm, and tan θ

in a range of 0.07 to 0.20, where θ

is an angle of incline of a surface of the irregularities with respect to an average line of the irregularities.

26. A multi-junction thin-film solar cell, comprising:

a plurality of photo-electric conversion elements on the opposite side of a side of a substrate on which light is incident; and

an intermediate layer, having irregular surfaces, provided on at least one of the photo-electric conversion elements adjacent to one another,

the irregularities of the intermediate layer partially having indentations substantially in the form of a hemisphere or circular cone with a diameter in a range of 200 nm to 2000 nm.

29. A solar cell substrate having irregularities on a surface which is in contact with a photo-electric conversion layer, light being incident on the solar cell substrate on the side of the irregularities,

wherein:

a height of the irregularities is set so that a root mean square height is in a range of 20 nm to 400 nm, and tan θ

is in a range of 0.15 to 0.25, where θ

is an angle of incline of a surface of the irregularities with respect to an average line of the irregularities.

30. A solar cell substrate having irregularities on a surface which is in contact with a photo-electric conversion layer, light being incident on the solar cell substrate on the other side of the irregularities,

wherein:

a height of the irregularities is set so that a root mean square height is in a range of 25 nm to 400 nm, and tan θ

is in a range of 0.07 to 0.15, where θ

is an angle of incline of a surface of the irregularities with respect to an average line of the irregularities.

31. A multi-junction thin-film solar cell, comprising:

a plurality of photo-electric conversion elements on the opposite side of a side of a substrate on which light is incident; and

an intermediate layer, having irregular surfaces, provided on at least one of the photo-electric conversion elements adjacent to one another,

a height of the irregularities of the intermediate layer being set so that a root mean square height is in a range of 25 nm to 400 nm, and tan θ

in a range of 0.07 to 0.15, where θ

is an angle of incline of a surface of the irregularities with respect to an average line of the irregularities.