Method of lithography

• US 20020051127A1
• Filed: 05/03/2001
• Published: 05/02/2002
• Est. Priority Date: 05/12/2000
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Yoshizawa, Masaki, Moriya, Shigeru, Yoshizawa, Noritsugu
• Granted Patent: US 6,548,214 B2
• Time in Patent Office: Days
• US Class Current: 355/77
• CPC Class Codes: G03B 27/32 Projection printing apparatus, e.g. enlarger, copying camera
• CPC Class Codes: G03F 7/70483 Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring

Abstract

A method of lithography capable of optimizing its process condition more simply and precisely based on a limited number of experiments is provided. A line edge roughness of a resist pattern is obtained as a characteristic value for evaluation. The resist pattern is formed in an orthogonal experiment based on an orthogonal table that includes significant factors, which define a process condition of its lithography. Reference level (benchmark) values are set for each factor in the orthogonal experiment, from which an appropriate reference level value which minimizes the edge roughness is selected as a process condition for proceeding the lithography. By provision of the edge roughness criterion as the characteristic value which has satisfactory reproducibility, can reflect a change in the process condition very sensitively, and has a linear correlation with respect to the resolution, the influences of respective process conditions on the resolution can be reflected more precisely and with an improved reproducibility.

Claims

1. A method of lithography for forming a resist pattern, comprising the steps of:

forming said resist pattern on the basis of an orthogonal experiment, wherein a factor for said orthogonal experiment includes a process condition of said lithography;

obtaining a line edge roughness of said resist pattern as a characteristic value for evaluation;

setting a reference level (benchmark) and its value for each of said factors in said orthogonal experiment;

selecting an optimal reference level and its optimal value from a combination thereof set in said orthogonal experiment that minimizes said line edge roughness; and

performing said lithography.

2. The method of lithography as claimed in claim 1, wherein said orthogonal experiment is conducted based on an orthogonal table.

3. The method of lithography as claimed in claim 1, wherein said process condition as said factor comprises a process temperature and a process time in a hexamethyldisilazane (HMDS) process.

4. The method of lithography as claimed in claim 1, wherein said process condition as said factor comprises a process temperature and a process time in a pre-bake (PB) process.

5. The method of lithography as claimed in claim 1, wherein said process condition as said factor comprises a process temperature and a process time in a post-exposure bake (PEB) process.

6. The method of lithography as claimed in claim 1, wherein said process condition as said factor comprises a temperature of a developing solution, a developing time and a concentration of said developing solution in a developing process.

7. The method of lithography as claimed in claim 1, wherein said process condition as said factor comprises a process temperature and a process time in a post-bake process.

8. A method of lithography for forming a resist pattern, comprising the steps of:

forming said resist pattern on the basis of an orthogonal experiment, wherein a factor for said orthogonal experiment includes a process condition of said lithography;

obtaining a line edge roughness of said resist pattern; and

selecting a reference value for said factor, wherein said factor minimizes said line edge roughness.

9. The method of lithography as claimed in claim 8, wherein said orthogonal experiment is based on an orthogonal table.

10. The method of lithography as claimed in claim 8, wherein said process condition includes a process temperature and a process time in a hexamethyldisilazane process.

11. The method of lithography as claimed in claim 8, wherein said process condition includes a process temperature and a process time in a pre-bake process.

12. The method of lithography as claimed in claim 8, wherein said process condition includes a process temperature and a process time in a post-exposure bake process.

13. The method of lithography as claimed in claim 8, wherein said process condition includes a temperature of a developing solution, a developing time and a concentration of said developing solution in a developing process.

14. The method of lithography as claimed in claim 8, wherein said process condition includes a process temperature and a process time in a post-bake process.