Magneto-resistive element
First Claim
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1. A magneto-resistive element, comprising:
- an intermediate layer; and
a pair of magnetic layers sandwiching the intermediate layer;
wherein one of the magnetic layers is a free magnetic layer in which magnetization rotation with respect to an external magnetic field is easier than in the other magnetic layer;
wherein the free magnetic layer is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer; and
wherein an element area, which is defined by the area of the intermediate layer through which current flows perpendicular to the film plane, is not larger than 1000 μ
m2.
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Abstract
The present invention provides a vertical current-type magneto-resistive element. The element includes an intermediate layer and a pair of magnetic layers sandwiching the intermediate layer, and at least one of a free magnetic layer and a pinned magnetic layer is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer. The element area defined by the area of the intermediate layer through which current flows perpendicular to the film is not larger than 1000 μm2.
54 Citations
72 Claims
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1. A magneto-resistive element, comprising:
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an intermediate layer; and
a pair of magnetic layers sandwiching the intermediate layer;
wherein one of the magnetic layers is a free magnetic layer in which magnetization rotation with respect to an external magnetic field is easier than in the other magnetic layer;
wherein the free magnetic layer is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer; and
wherein an element area, which is defined by the area of the intermediate layer through which current flows perpendicular to the film plane, is not larger than 1000 μ
m2. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 20, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72)
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19. A magneto-resistive element, comprising:
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an intermediate layer; and
a pair of magnetic layers sandwiching the intermediate layer;
wherein one of the magnetic layers is a pinned magnetic layer in which magnetization rotation with respect to an external magnetic field is more difficult than in the other magnetic layer;
wherein the pinned magnetic layer is a multilayer film comprising at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer;
wherein a thickness d of the non-magnetic layer is in the range of 0.3 nm<
d<
2.6 nm;
wherein the pinned magnetic layer is in contact with a primer layer or an antiferromagnetic layer; and
wherein an element area, which is defined by the area of the intermediate layer through which current flows perpendicular to the film plane, is not larger than 1000 μ
m2. - View Dependent Claims (21)
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Specification