Low substrate-noise electrostatic discharge protection circuits with bi-directional silicon diodes
First Claim
1. An electrostatic discharge protection circuit, comprising:
- at least one bi-directional silicon diode having a first silicon diode and a second silicon diode, wherein an n-type portion of the first silicon diode is coupled to a p-type portion of the second silicon diode and a p-type portion of the first silicon diode is coupled to an n-type portion of the second silicon diode, and wherein the at least one bi-directional silicon diode is responsive to one of a positive electrostatic discharge or a negative electrostatic discharge.
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Accused Products
Abstract
An integrated circuit device that includes a plurality of electrostatic discharge clamp circuits, variously coupled to VDD, VSS and transistor, having at least one bi-directional silicon diode that includes a first silicon diode and a second silicon diode, wherein an n-type portion of the first silicon diode is coupled to a p-type portion of the second silicon diode and a p-type portion of the first silicon diode is coupled to an n-type portion of the second silicon diode, responsive to either a positive electrostatic discharge or a negative electrostatic discharge to provide electrostatic discharge protection.
21 Citations
28 Claims
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1. An electrostatic discharge protection circuit, comprising:
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at least one bi-directional silicon diode having a first silicon diode and a second silicon diode, wherein an n-type portion of the first silicon diode is coupled to a p-type portion of the second silicon diode and a p-type portion of the first silicon diode is coupled to an n-type portion of the second silicon diode, and wherein the at least one bi-directional silicon diode is responsive to one of a positive electrostatic discharge or a negative electrostatic discharge. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 28)
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11. An electrostatic discharge protection circuit, comprising:
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at least one bi-directional silicon diode having a first silicon-on-insulator diode and a second silicon-on-insulator diode, wherein an n-type portion of the first silicon-on-insulator diode is coupled to a p-type portion of the second silicon-on-insulator diode and a p-type portion of the first silicon-on-insulator diode is coupled to an n-type portion of the second silicon-on-insulator diode, and wherein the at least one bi-directional silicon diode is responsive to one of a positive electrostatic discharge or a negative electrostatic discharge. - View Dependent Claims (12, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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13. An integrated circuit, comprising:
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a signal pad;
a first voltage source; and
a first electrostatic discharge clamp circuit, coupled to the first voltage source, having at least one bi-directional silicon diode including a first silicon diode and a second silicon diode, wherein an n-type portion of the first silicon diode is coupled to a p-type portion of the second silicon diode and a p-type portion of the first silicon diode is coupled to an n-type portion of the second silicon diode, and wherein the at least one bi-directional silicon diode is responsive to one of a positive electrostatic discharge or a negative electrostatic discharge.
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Specification