Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications
First Claim
1. A method of forming a conductive barrier layer on a dielectric layer, said method comprising the steps of:
- providing the dielectric layer having a top surface, a bottom surface, and an opening extending from the top surface to the bottom surface, and including a conductive plug having a top surface substantially coplanar with said top surface of said dielectric layer;
subjecting said top surface of said dielectric layer and said top surface of said conductive plug to a gas selected from the group consisting of;
argon, nitrogen, hydrogen, CH4, and any combination thereof, said gas being incorporated into a high-temperature ambient or a plasma; and
forming said conductive barrier layer on said top surface of said dielectric layer and said top surface of said conductive plug after said step of subjecting said top surface of said dielectric layer and said top surface of said conductive plug to said gas incorporated into said high-temperature ambient or said plasma.
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Accused Products
Abstract
An embodiment of the instant invention is a method of forming a conductive barrier layer on a dielectric layer, the method comprising the steps of: providing the dielectric layer (112 of FIG. 7d) having a top surface, a bottom surface, and an opening extending from the top surface to the bottom surface, and including a conductive plug (704 of FIG. 7d) having a top surface substantially coplanar with the top surface of the dielectric layer; subjecting the top surface of the dielectric layer and the top surface of the conductive plug to a gas selected from the group consisting of: argon, nitrogen, hydrogen, CH4, and any combination thereof, the gas being incorporated into a high-temperature ambient or a plasma; and forming the conductive barrier layer on the top surface of the dielectric layer and the top surface of the conductive plug after the step of subjecting the top surface of the dielectric layer and the top surface of the conductive plug to the gas incorporated into the high-temperature ambient or the plasma.
128 Citations
8 Claims
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1. A method of forming a conductive barrier layer on a dielectric layer, said method comprising the steps of:
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providing the dielectric layer having a top surface, a bottom surface, and an opening extending from the top surface to the bottom surface, and including a conductive plug having a top surface substantially coplanar with said top surface of said dielectric layer;
subjecting said top surface of said dielectric layer and said top surface of said conductive plug to a gas selected from the group consisting of;
argon, nitrogen, hydrogen, CH4, and any combination thereof, said gas being incorporated into a high-temperature ambient or a plasma; and
forming said conductive barrier layer on said top surface of said dielectric layer and said top surface of said conductive plug after said step of subjecting said top surface of said dielectric layer and said top surface of said conductive plug to said gas incorporated into said high-temperature ambient or said plasma. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification