Gallium nitride materials and methods

  • US 20020074552A1
  • Filed: 12/14/2000
  • Published: 06/20/2002
  • Est. Priority Date: 12/14/2000
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor material comprising:

  • a silicon substrate;

    a compositionally-graded transition layer formed over the silicon substrate; and

    a gallium nitride material layer formed over the transition layer.

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