Power semiconductor switching devices, power converters, integrated circuit assemblies, Integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor
First Claim
1. A power semiconductor switching device comprising:
- a semiconductive substrate having a surface; and
a power transistor having a planar configuration and comprising a plurality of electrically coupled sources and a plurality of electrically coupled drains formed using the semiconductive substrate and adjacent to the surface.
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Accused Products
Abstract
Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor are described. One exemplary aspect provides a power semiconductor device including a semiconductive substrate having a surface; and a power transistor having a planar configuration and comprising a plurality of electrically coupled sources and a plurality of electrically coupled drains formed using the semiconductive substrate and adjacent the surface.
8 Citations
50 Claims
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1. A power semiconductor switching device comprising:
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a semiconductive substrate having a surface; and
a power transistor having a planar configuration and comprising a plurality of electrically coupled sources and a plurality of electrically coupled drains formed using the semiconductive substrate and adjacent to the surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 14, 15, 16, 17, 18, 19, 20, 21, 22, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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13. A power semiconductor device comprising:
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a semiconductive substrate; and
a semiconductor device comprising at least one thousand planar field effect transistors formed using the substrate and wherein individual ones of the field effect transistors include a source and a drain electrically coupled with other sources and drains of the other planar field effect transistors.
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23. A power semiconductor switching device comprising a plurality of planar submicron field effect transistor devices coupled in parallel and configured to selectively conduct power currents in excess of one Ampere.
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24. A power semiconductor switching device comprising a plurality of field effect transistors having source contacts and drain contacts formed adjacent to a common surface of a semiconductive substrate and configured to selectively conduct power currents in excess of one Ampere.
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25. A power semiconductor switching device comprising:
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a monolithic semiconductive substrate having a surface; and
a power transistor comprising a source and a drain formed using a monolithic semiconductive substrate and the source and the drain are formed adjacent to the surface.
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26. A power semiconductor switching device comprising a flip chip configuration configured to conduct power currents in excess of one Ampere.
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27. A power current switching method comprising:
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providing a power transistor comprising a planar configuration and having a plurality of electrically coupled sources and a plurality of electrically coupled drains;
receiving a control signal; and
selectively conducting power currents intermediate the electrically coupled source and electrically coupled drains within responsive to the control signal.
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38. A method of forming a power semiconductor switching device configured to conduct power currents comprising:
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forming at least one thousand planar field effect transistors individually having a source, a drain and a gate adjacent to a common surface of a semiconductive substrate;
electrically coupling the sources of the field effect transistors;
electrically coupling the drains of the field effect transistors; and
electrically coupling the gates of the field effect transistors.
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49. A method of forming a power semiconductor switching device comprising:
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forming a plurality of planar submicron MOSFET devices; and
coupling the planar submicron MOSFET devices in parallel to collectively conduct power currents in excess of one Ampere.
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50. A method of forming a power semiconductor switching device comprising:
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providing a semiconductor die in a flip chip configuration;
coupling a plurality of planar field effect transistors of semiconductor die in parallel to enable conduction of power currents in excess of one Ampere.
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Specification