Radiation hardened silicon-on-insulator (SOI) transistor having a body contact
First Claim
1. A field effect transistor comprising:
- a dielectric layer disposed on a substrate; and
a transistor structure disposed on said dielectric layer, wherein said transistor structure includes;
a body region formed on a first surface portion of said dielectric layer;
a source region formed on a second surface portion of said dielectric layer contiguous with said first surface portion;
a drain region formed on a third surface portion of said dielectric layer contiguous with said first surface portion;
a gate layer overlying said body region and being operative to induce a channel in that portion of said body region disposed between and adjoining said source region and said drain region; and
a plurality of diffusions placed across two edges of said source region, wherein said diffusions are ohmically connected to said body region via a body contact.
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0 Petitions
Accused Products
Abstract
A radiation hardened silicon-on-insulator transistor is disclosed. A dielectric layer is disposed on a substrate, and a transistor structure is disposed on the dielectric layer. The transistor structure includes a body region, a source region, a drain region, and a gate layer. The body region is formed on a first surface portion of the dielectric layer, the source region is formed on a second surface portion of the dielectric layer contiguous with the first surface portion, the drain region is formed on a third surface portion of the dielectric layer contiguous with the first surface portion, and the gate layer overlies the body region and being operative to induce a channel in that portion of the body region disposed between and adjoining the source region and the drain region. In addition, multiple diffusions are placed across two edges of the source region. These diffusions are ohmically connected to the body region via a body contact, and these diffusions are also connected to the source region by a self-aligned salicide.
7 Citations
12 Claims
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1. A field effect transistor comprising:
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a dielectric layer disposed on a substrate; and
a transistor structure disposed on said dielectric layer, wherein said transistor structure includes;
a body region formed on a first surface portion of said dielectric layer;
a source region formed on a second surface portion of said dielectric layer contiguous with said first surface portion;
a drain region formed on a third surface portion of said dielectric layer contiguous with said first surface portion;
a gate layer overlying said body region and being operative to induce a channel in that portion of said body region disposed between and adjoining said source region and said drain region; and
a plurality of diffusions placed across two edges of said source region, wherein said diffusions are ohmically connected to said body region via a body contact. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for providing a body contact for a field effect transistor, wherein said field effect transistor is disposed on a dielectric layer situated on top of a substrate, wherein said field effect transistor includes a body region formed on a first surface portion of said dielectric layer, a source region formed on a second surface portion of said dielectric layer contiguous with said first surface portion, a drain region formed on a third surface portion of said dielectric layer contiguous with said first surface portion, a gate layer overlying said body region and being operative to induce a channel in that portion of said body region disposed between and adjoining said source region and said drain region, said method comprising:
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placing a plurality of diffusions across two edges of said source region of said field effect transistor; and
ohmically connecting said diffusions to said body region of said field effect transistor via a body contact. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification