Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same

• US 20020098697A1
• Filed: 11/30/2001
• Published: 07/25/2002
• Est. Priority Date: 11/30/2000
• Status: Active Grant

• Current Assignee: Showa Denko KK
• Original Assignee: Showa Denko KK
• Inventors: Sato, Hajime, Shimazu, Yoshitomo
• Granted Patent: US 6,740,589 B2
• Time in Patent Office: Days
• US Class Current: 438/691
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]
• CPC Class Codes: Y10S 438/959 Mechanical polishing of wafer

Abstract

A polishing composition for polishing copper and tantalum or a tantalum compound provided on a semiconductor wafer, including an aqueous solvent and at least one amino acid having two or more nitrogen atoms.

Claims

1. A polishing composition for polishing copper and tantalum or a tantalum compound provided on a semiconductor wafer, comprising an aqueous solvent and at least one amino acid having two or more nitrogen atoms.

2. The polishing composition according to claim 1, wherein the amino acid having two or more nitrogen atoms is a compound selected from the group consisting of arginine, lysine, asparagine, glutamine, glycylglycine, citrulline, azaserine, creatine, tryptophan, histidine, δ

-hydroxy-lysine, and a salt thereof.

3. The polishing composition according to claim 1, containing the amino acid having two or more nitrogen atoms in an amount of 0.01-10 mass %.

4. The polishing composition according to claim 1, further comprising at least one copper-polishing accelerator.

5. The polishing composition according to claim 4, wherein the copper-polishing accelerator is a substance selected from the group consisting of a carboxylic acid, a sulfonic acid, a phosphonic acid, ammonia, and a salt or a derivative thereof.

6. The polishing composition according to claim 4, wherein the copper-polishing accelerator is a substance selected from the group consisting of formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, glycolic acid, oxalic acid, malic acid, citric acid, succinic acid, succinic acid imide, N-hydroxysuccinic acid imide, lactic acid, tartaric acid, adipic acid, polyacrylic acid, benzoic acid, nicotinic acid, sulfuric acid, benzenesulfonic acid, sulfamic acid, hexametaphosphoric acid, 1-hydroxyethylidene-1,-diphosphonic acid, ethylamine, hexamethylenetetramine, ethylenediamine, triethanolamine, tris(hydroxymethyl)aminomethane, urea, thiourea, N-methylthiourea, and a salt thereof.

7. The polishing composition according to claim 5, wherein the copper-polishing accelerator is a substance selected from the group consisting of formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, glycolic acid, oxalic acid, malic acid, citric acid, succinic acid, succinic acid imide, N-hydroxysuccinic acid imide, lactic acid, tartaric acid, adipic acid, polyacrylic acid, benzoic acid, nicotinic acid, sulfuric acid, benzenesulfonic acid, sulfamic acid, hexametaphosphoric acid, 1-hydroxyethylidene-1,1-diphosphonic acid, ethylamine, hexamethylenetetramiine, ethylenediamine, triethanolamine, tris(hydroxymethyl)aminomethane, urea, thiourea, N-methylthiourea, and a salt thereof.

8. The polishing composition according to claim 4, containing the copper-polishing accelerator in a mol ratio of 0.1-10 to the amino acid having two or more nitrogen atoms.

9. The polishing composition according to claim 5, containing the copper-polishing accelerator in a mol ratio of 0.1-10 to the amino acid having two or more nitrogen atoms.

10. The polishing composition according to claim 1, having a pH of 6-11.

11. The polishing composition according to claim 1, further comprising at least one kind of abrasive grain.

12. The polishing composition according to claim 11, wherein the abrasive grain is selected from the group consisting of silica, alumina, titania, ceria, zirconia, manganese oxide, and a mixture thereof.

13. The polishing composition according to claim 12, wherein the polishing composition contains colloidal silica having an average primary particle size of 10-200 nm.

14. The polishing composition according to claim 12, wherein the polishing composition contains fumed silica having an average primary particle size of 5-100 nm.

15. The polishing composition according to claim 12, wherein the polishing composition contains fumed alumina having an average primary particle size of 10-200 nm.

16. The polishing composition according to claim 12, wherein the polishing composition contains alumina produced by an ammonium alum method having an average primary particle size of 10-200 nm.

17. The polishing composition according to claim 12, wherein the polishing composition contains alumina produced by an aluminum alkoxide method having an average primary particle size of 10-200 nm.

18. The polishing composition according to claim 12, wherein the polishing composition contains alumina produced by an ammonium dowsonite method having an average primary particle size of 10-200 nm.

19. The polishing composition according to claim 12, wherein the polishing composition contains alumina produced by an ethylene chlorohydrin method having an average primary particle size of 10-200 nm.

20. The polishing composition according to claim 12, wherein the polishing composition contains fumed titania having an average primary particle size of 10-200 nm.

21. The polishing composition according to claim 11, containing the abrasive grain in an amount of 30 mass % or less.

22. The polishing composition according to claim 1, further comprising an oxidizing agent.

23. The polishing composition according to claim 22, wherein the oxidizing agent is hydrogen peroxide.

24. The polishing composition according to claim 22, containing the oxidizing agent in an amount of 0.1-10 mass %.

25. A semiconductor wiring wafer comprising copper wiring and a diffusion barrier layer formed from tantalum or a tantalum compound, produced by contacting a semiconductor wafer with a polishing pad, feeding a polishing composition comprising aqueous solvent and at least one amino acid having two or more nitrogen atoms between the semiconductor wafer and the polishing pad, and polishing the wafer.

26. A method for producing a semiconductor wiring wafer which comprises forming copper wiring and a diffusion barrier layer of tantalum or a tantalum compound on a semiconductor wafer, contacting the semiconductor wafer with a polishing pad;

feeding a polishing composition comprising aqueous solvent and at least one amino acid having two or more nitrogen atoms between the semiconductor wafer and the polishing pad; and

polishing the wafer.