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Integrated circuit device having double data rate capability

  • US 20020099896A1
  • Filed: 01/22/2002
  • Published: 07/25/2002
  • Est. Priority Date: 04/18/1990
  • Status: Active Grant
First Claim
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1. A memory subsystem comprising two memory devices connected in parallel to a bus, said bus including a plurality of bus lines for carrying substantially all address, data and control information needed by'"'"'said memory devices, said control information including device-select information, said bus containing substantially fewer bus lines than the number of bits in a single address, and said bus carrying device-select information without the need for separate device-select lines connected directly to individual memory devices.

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