Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor
First Claim
1. Integrated circuitry comprising:
- a monolithic semiconductive substrate;
a power semiconductor switching device comprising a plurality of field effect transistors formed using the monolithic semiconductive substrate and having a plurality of electrical contacts including a plurality of gate contacts, a plurality of source contacts coupled in parallel and a plurality of drain contacts coupled in parallel; and
auxiliary circuitry formed using the monolithic semiconductive substrate and configured to couple with at least one of the electrical contacts of the power field effect transistors.
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Abstract
Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor are described. One exemplary aspect provides integrated circuitry including a monolithic semiconductive substrate; a power semiconductor switching device comprising a plurality of field effect transistors formed using the monolithic semiconductive substrate and having a plurality of electrical contacts including a plurality of gate contacts, a plurality of source contacts coupled in parallel and a plurality of drain contacts coupled in parallel; and auxiliary circuitry formed using the monolithic semiconductive substrate and configured to couple with at least one of the electrical contacts of the power field effect transistors
35 Citations
22 Claims
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1. Integrated circuitry comprising:
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a monolithic semiconductive substrate;
a power semiconductor switching device comprising a plurality of field effect transistors formed using the monolithic semiconductive substrate and having a plurality of electrical contacts including a plurality of gate contacts, a plurality of source contacts coupled in parallel and a plurality of drain contacts coupled in parallel; and
auxiliary circuitry formed using the monolithic semiconductive substrate and configured to couple with at least one of the electrical contacts of the power field effect transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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12. A method of forming a power transistor comprising:
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providing a monolithic semiconductive substrate having a surface;
forming a power field effect transistor using the monolithic substrate and having a source contact and a drain contact adjacent to the surface; and
forming auxiliary circuitry using the monolithic semiconductive substrate, the forming comprising coupling the auxiliary circuitry with at least one contact of the power field effect transistor.
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Specification