Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
First Claim
1. A method of fabricating gallium nitride semiconductor structures comprising the steps of:
- providing a substrate including a plurality of non-gallium nitride posts that define trenches therebetween, the non-gallium nitride posts including non-gallium nitride sidewalls and non-gallium nitride tops, and the trenches including non-gallium nitride floors; and
growing gallium nitride on the non-gallium nitride posts, including on the non-gallium nitride tops.
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Abstract
A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops. Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids. The gallium nitride pyramids preferably are grown at a first temperature and the gallium nitride preferably is grown on the pyramids at a second temperature that is higher than the first temperature. The first temperature preferably is about 1000° C. or less and the second temperature preferably is about 1100° C. or more. However, other than temperature, the same processing conditions preferably are used for both growth steps. The grown gallium nitride on the pyramids preferably coalesces to form a continuous gallium nitride layer. Accordingly, gallium nitride may be grown without the need to form masks during the gallium nitride growth process. Moreover, the gallium nitride growth may be performed using the same processing conditions other than temperatures changes. Accordingly, uninterrupted gallium nitride growth may be performed.
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Citations
48 Claims
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1. A method of fabricating gallium nitride semiconductor structures comprising the steps of:
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providing a substrate including a plurality of non-gallium nitride posts that define trenches therebetween, the non-gallium nitride posts including non-gallium nitride sidewalls and non-gallium nitride tops, and the trenches including non-gallium nitride floors; and
growing gallium nitride on the non-gallium nitride posts, including on the non-gallium nitride tops. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 16, 17, 18, 19, 20, 21, 22, 24, 25, 26, 27, 28, 30, 31, 32, 33, 34, 35, 36, 37, 38, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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15. A method of fabricating gallium nitride semiconductor structures comprising the steps of:
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providing a substrate including a plurality of non-gallium nitride posts that define trenches therebetween, the non-gallium nitride posts including non-gallium nitride sidewalls and non-gallium nitride tops, and the trenches including non-gallium nitride floors;
growing gallium nitride on the substrate at a first temperature; and
thencontinuing growing gallium nitride on the substrate at a second temperature that is higher than the first temperature.
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23. A method of fabricating semiconductor structures comprising the steps of:
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providing a substrate comprising a first material, the substrate including a plurality of posts that comprise the first material and that define trenches therebetween, the posts including sidewalls and tops that comprise the first material, and the trenches including floors that comprise the first material; and
growing a second semiconductor material on the posts, including on the tops that comprise the first material.
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29. A gallium nitride semiconductor structure comprising:
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a substrate including a plurality of non-gallium nitride posts that define trenches therebetween, the non-gallium nitride posts including non-gallium nitride sidewalls and non-gallium nitride tops, and the trenches including non-gallium nitride floors; and
a gallium nitride layer on the non-gallium nitride posts including on the non-gallium nitride tops.
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39. A semiconductor structure comprising:
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a substrate comprising a first material, the substrate including a plurality of posts that comprise the first material and that define trenches therebetween, the posts including sidewalls and tops that comprise the first material, and the trenches including floors that comprise the first material; and
a layer of second semiconductor material on the posts including on the tops that comprise the first material.
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Specification