Light emitting device and method of manufacturing the same
First Claim
1. A light emitting device comprising:
- a thin film transistor on an insulator;
an interlayer insulating film on the thin film transistor;
a first insulating film on the interlayer insulating film;
an anode on the first insulating film;
a wiring line for electrically connecting the thin film transistor to the anode;
a bank over the first insulating film, edge portions of the anode, and wiring;
a second insulating film on the anode and the bank;
an organic compound layer over the anode with the second insulating film interposed therebetween; and
a cathode on the organic compound layer, wherein the first insulating film is a cured film formed by plasma treatment, and comprises one or more kinds of gas elements selected from the group consisting of hydrogen, nitrogen, halogenated carbon, hydrogen fluoride, and rare gas.
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Accused Products
Abstract
A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.
194 Citations
61 Claims
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1. A light emitting device comprising:
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a thin film transistor on an insulator;
an interlayer insulating film on the thin film transistor;
a first insulating film on the interlayer insulating film;
an anode on the first insulating film;
a wiring line for electrically connecting the thin film transistor to the anode;
a bank over the first insulating film, edge portions of the anode, and wiring;
a second insulating film on the anode and the bank;
an organic compound layer over the anode with the second insulating film interposed therebetween; and
a cathode on the organic compound layer, wherein the first insulating film is a cured film formed by plasma treatment, and comprises one or more kinds of gas elements selected from the group consisting of hydrogen, nitrogen, halogenated carbon, hydrogen fluoride, and rare gas. - View Dependent Claims (2, 3)
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4. A light emitting device comprising:
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a thin film transistor on an insulator;
an interlayer insulating film on the thin film transistor;
a first insulating film on the interlayer insulating film;
an anode on the first insulating film;
a wiring line for electrically connecting the thin film transistor to the anode;
a bank over the first insulating film, edge portions of the anode, and wiring;
a second insulating film on the anode and the bank;
an organic compound layer over the anode with the second insulating film interposed therebetween; and
a cathode on the organic compound layer, wherein the first insulating film is a DLC film. - View Dependent Claims (5, 6)
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7. A light emitting device comprising:
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a thin film transistor on an insulator;
an interlayer insulating film on the thin film transistor;
a first insulating film on the interlayer insulating film;
an anode on the first insulating film;
a wiring line for electrically connecting the thin film transistor to the anode;
a bank over the first insulating film, edge portions of the anode, and wiring;
a second insulating film on the anode and the bank;
an organic compound layer over the anode with the second insulating film interposed therebetween; and
a cathode on the organic compound layer, wherein the first insulating film is a silicon nitride film. - View Dependent Claims (8, 9)
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10. A light emitting device comprising:
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a thin film transistor on an insulator;
an interlayer insulating film on the thin film transistor;
a first insulating film on the interlayer insulating film;
an anode on the first insulating film;
a wiring line for electrically connecting the thin film transistor to the anode;
a bank over the first insulating film, edge portions of the anode, and wiring;
a second insulating film on the anode and the bank;
an organic compound layer above the over with the second insulating film interposed therebetween; and
a cathode on the organic compound layer, wherein the first insulating film comprises a cured film formed by plasma treatment and a DLC film. - View Dependent Claims (11, 12, 14, 15, 17, 18, 20, 21, 22, 23, 24, 26, 27, 28, 29)
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13. A light emitting device comprising:
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a thin film transistor on an insulator;
an interlayer insulating film on the thin film transistor;
a first insulating film on the interlayer insulating film;
an anode on the insulating film;
a wiring line for electrically connecting the thin film transistor to the anode;
a bank over the first insulating film, edge portions of the anode, and wiring;
a second insulating film on the anode and the bank;
an organic compound layer over the anode with the second insulating film interposed therebetween; and
a cathode on the organic compound layer, wherein the first insulating film is a cured film formed by plasma treatment and a silicon nitride film.
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16. A light emitting device comprising:
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a thin film transistor on an insulator;
an interlayer insulating film on the thin film transistor;
a first insulating film on the interlayer insulating film;
an anode on the insulating film;
a wiring line for electrically connecting the thin film transistor to the anode;
a bank over the first insulating film, edge portions of the anode, and wiring;
a second insulating film on the bank;
an organic compound layer on the anode and the bank; and
a cathode on the organic compound layer, wherein the second insulating film is a silicon nitride film.
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19. A device comprising:
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a thin film transistor on an insulator;
a first interlayer insulating film over the thin film transistor;
an electrode over the first interlayer insulating film;
a wiring line for electrically connecting the thin film transistor to the electrode, over the first interlayer insulating film;
a second interlayer insulating film over the first interlayer insulating film, the electrode, and the wiring line; and
an anti-electrostatic film over the second interlayer insulating film.
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25. A method of manufacturing a light emitting device comprising the steps of:
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forming an interlayer insulating film on a thin film transistor formed on an insulator;
forming a first insulating film on the interlayer insulating film;
forming a wiring line on the first insulating film;
forming an anode electrically connected to the thin film transistor through the wiring line, on the first insulating film;
forming a resin insulating film that covers the anode and the wiring line;
etching the resin insulating film to form a bank;
conducting heat treatment to the resin insulating film;
wiping the anode;
forming a second insulating film to cover the anode and the bank;
forming an organic compound layer on the second insulating film; and
forming a cathode on the organic compound layer.
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30. A method of manufacturing a light emitting device comprising the steps of:
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forming an interlayer insulating film on a thin film transistor formed on an insulator;
forming a first insulating film on the interlayer insulating film;
forming a wiring line on the first insulating film;
forming an anode electrically connected to the thin film transistor through the wiring line, on the first insulating film;
conducting first heat treatment to the anode;
forming a resin insulating film that covers the anode and the wiring line, and etching the resin insulating film to form a bank;
conducting second heat treatment to the resin insulating film;
wiping the anode;
forming a second insulating film to cover the anode and the bank;
forming an organic compound layer on the second insulating film; and
forming a cathode on the organic compound layer. - View Dependent Claims (31, 32, 33, 34, 36, 37, 38, 39)
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35. A method of manufacturing a light emitting device comprising the steps of:
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forming an interlayer insulating film on a thin film transistor formed on an insulator;
forming a first insulating film on the interlayer insulating film;
forming a wiring line;
forming an anode electrically connected to the thin film transistor through the wiring line;
conducting first heat treatment to the anode;
forming a resin insulating film that covers the anode and the wiring line, which serves a bank;
conducting second heat treatment to the resin insulating film;
etching the resin insulating film to form a bank;
wiping the anode;
forming an insulating film to cover the anode and the bank;
forming an organic compound layer on the insulating film; and
forming a cathode on the organic compound layer.
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40. A method of manufacturing a light emitting device comprising the steps of:
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forming an interlayer insulating film on a thin film transistor formed on an insulator;
performing plasma treatment on a surface of the interlayer insulating film;
forming a wiring line;
forming an anode electrically connected to the thin film transistor through the wiring line;
forming a resin insulating film that covers the anode and the wiring line;
etching the resin insulating film to form a bank;
conducting heat treatment to the resin insulating film;
wiping the anode;
forming an insulating film to cover the anode and the bank;
forming an organic compound layer on the insulating film; and
forming a cathode on the organic compound layer. - View Dependent Claims (41, 42, 43, 44, 46, 47, 48, 49)
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45. A method of manufacturing a light emitting device comprising the steps of:
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forming an interlayer insulating film on a thin film transistor, the thin film transistor being formed on a substrate having an insulating surface;
performing plasma treatment on a surface of the interlayer insulating film;
forming an anode over the interlayer insulating film;
forming a wiring line over the interlayer insulating film;
forming a resin insulating film that covers the anode, the wiring line and the interlayer insulating film;
moving the substrate on which the thin film transistor is formed from a first processing room to a second processing room;
etching the resin insulating film to form a bank;
conducting heat treatment;
performing plasma treatment on a surface of the bank;
wiping the anode;
forming an insulating film to cover the anode and the bank;
forming an organic compound layer on the insulating film; and
forming a cathode on the organic compound layer.
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50. A method of manufacturing a device comprising the steps of:
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forming a thin film transistor formed over a substrate having an insulating surface;
forming an interlayer insulating film over the thin film transistor;
forming an electrode over the interlayer insulating film;
forming a wiring line connecting the anode with the thin film transistor, over the interlayer insulating film;
forming a resin insulating film over the electrode, the wiring line and the interlayer insulating film;
moving the substrate over which the thin film transistor is formed from a first processing room to a second processing room. - View Dependent Claims (51)
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52. A method of manufacturing a device comprising the steps of:
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forming a thin film transistor formed over a substrate having an insulating surface;
forming an interlayer insulating film over the thin film transistor;
forming an electrode over the interlayer insulating film;
forming a wiring line connecting the anode with the thin film transistor, over the interlayer insulating film;
forming a resin insulating film over the anode, the wiring line and the interlayer insulating film;
forming a film for preventing the substrate over which the thin film transistor is formed from a contamination and an electrostatic discharge damage. - View Dependent Claims (53, 54, 55, 56, 57, 59, 60, 61)
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58. A method of manufacturing a device comprising the steps of:
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removing an anti-electrostatic film formed on a resin insulating film, the resin insulating film formed over a thin film transistor and anode;
etching the resin insulating film to form a bank;
baking the bank in a vacuum;
forming an organic compound layer over the bank and the anode;
forming a cathode on the organic compound layer.
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Specification