Liquid crystal device and method of manufacturing the same

• US 20020126243A1
• Filed: 02/17/2000
• Published: 09/12/2002
• Est. Priority Date: 02/23/1999
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Hibino, Yoshitaka, Tarui, Tetsuya, Hirobe, Toshihiko
• Granted Patent: US 6,529,251 B2
• Time in Patent Office: Days
• US Class Current: 349/122
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT

Abstract

A liquid crystal display device includes: a source electrode (gate electrode) having an Al or Al alloy layer; a pixel electrode provided above the source electrode (gate electrode); and interlayer insulator films interposed between the source electrode (gate electrode) and the pixel electrode by depositing a TFT protection film as an inorganic insulator film and an organic insulator film in this sequence when viewed from the source electrode, so as to cover the source electrode (gate electrode).

Claims

1. A liquid crystal display device, comprising:

a first electrode having an Al or Al alloy layer;

a pixel electrode provided above the first electrode, and

at least two interlayer insulator layers interposed between the first electrode and the pixel electrode so as to cover the first electrode,

wherein the two interlayer insulator layers include a first layer composed of an inorganic insulator film and a second layer composed of an organic insulator film, the first and second layers being provided in this sequence when viewed from the first electrode.

2. The liquid crystal display device as set forth in claim 1, wherein

the first layer composed of an inorganic insulator film is provided directly on the first electrode.

3. The liquid crystal display device as set forth in claim 1, wherein

the first electrode serves as a source electrode,

a gate electrode having an Al or Al alloy layer is provided below the source electrode, and

the inorganic insulator film of the first layer is a TFT protection film provided on the source electrode.

4. The liquid crystal display device as set forth in claim 3, wherein

the gate electrode has a three-layered structure including a Ti film, an Al film, and a TiN film.

5. The liquid crystal display device as set forth in claim 3, wherein

the TFT protection film is composed of SiN_x or SiO₂.

6. The liquid crystal display device as set forth in claim 1, wherein

the organic insulator film is composed of an acrylic resin.

7. The liquid crystal display device as set forth in claim 1, wherein

the first electrode serves as a source electrode,

a gate electrode having an Al or Al alloy layer is provided below the source electrode,

the source electrode includes at least a first source electrode layer composed of a source TiN film and a second source electrode layer composed of Al or an Al alloy, the first and second source electrode layers being provided in this sequence when viewed from the gate electrode, and

the first source electrode layer and the pixel electrode are provided so as to cover a terminal section, of the gate electrode, that serves as a connecting terminal.

8. A liquid crystal display device, comprising:

a gate electrode having an Al or Al alloy layer;

a gate insulator layer provided above the gate electrode; and

a source electrode provided above the gate insulator layer,

wherein the source electrode includes at least a first source electrode layer and a second source electrode layer composed of Al or an Al alloy, the first and second source electrode layers being provided in this sequence when viewed from the gate insulator layer.

9. The liquid crystal display device as set forth in claim 8, wherein

the first source electrode layer is composed of an insulator film.

10. A method of manufacturing a liquid crystal display device, comprising the steps of:

providing a first electrode having an Al or Al alloy layer;

depositing at least a first layer composed of an inorganic insulator film and a second layer composed of an organic insulator film above the first electrode so as to provide at least two interlayer insulator layers that cover the first electrode, the first and second layers being provided in this sequence when viewed from the first electrode; and

providing a pixel electrode above the interlayer insulator layers.

11. The method of manufacturing a liquid crystal display device as set forth in claim 10, wherein

the first layer composed of an inorganic insulator film is provided directly on the first electrode.

12. The method of manufacturing a liquid crystal display device as set forth in claim 11, wherein

the first electrode serves as a source electrode,

a gate electrode having an Al or Al alloy layer is provided below the source electrode, and

the inorganic insulator film of the first layer is a TFT protection film provided on the source electrode.

13. The method of manufacturing a liquid crystal display device as set forth in claim 11, wherein

the first electrode serves as a source electrode,

a gate electrode having an Al or Al alloy layer is provided below the source electrode,

the source electrode is formed by depositing at least a first source electrode layer and a second source electrode layer composed of Al or an Al alloy in this sequence when viewed from the gate electrode, and

the first source electrode layer and the pixel electrode cover a terminal section, of the gate electrode, that serves as a connecting terminal.

15. The method of manufacturing a liquid crystal display device as set forth in claim 14, wherein

the first source electrode layer is composed of an insulator film.

14. A method of manufacturing a liquid crystal display device, comprising the steps of:

providing a gate insulator layer above a gate electrode having an Al or Al alloy layer;

depositing at least a first source electrode layer and a second source electrode layer composed of an Al or Al alloy above the gate insulator layer so as to provide a source electrode, the first and second source electrode layers being provided in this sequence when viewed from the gate insulator layer; and

wet etching the second source electrode layer and thereafter dry etching the first source electrode layer, so as to fabricate the source electrode into a predetermined electrode pattern.