Method of forming crystalline semiconductor thin film on base substrate, lamination formed with crystalline semiconductor thin film and color filter

• US 20020132454A1
• Filed: 10/17/2001
• Published: 09/19/2002
• Est. Priority Date: 03/19/2001
• Status: Active Grant

• Current Assignee: Fuji Xerox Company Limited (Xerox Holdings Corp.)
• Original Assignee: Fuji Xerox Company Limited (Xerox Holdings Corp.)
• Inventors: Shimizu, Keishi, Yatsuda, Kazutoshi, Ohtsu, Shigemi, Akutsu, Eiichi
• Granted Patent: US 6,680,242 B2
• Time in Patent Office: Days
• US Class Current: 438/486
• CPC Class Codes: C23C 14/083 of refractory metals or yttrium
• CPC Class Codes: C23C 14/58 After-treatment
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02491 Conductive materials
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/02686 Pulsed laser beam

Abstract

A method of forming a crystalline semiconductor thin film on a base material which can be prepared at a low temperature by simple step and device, the method including a processing step of applying UV-rays to an amorphous semiconductor thin film provided on a base material while keeping a temperature at not less than 25° C. and not more than 300° C. in a vacuum or a reducing gas atmosphere, as well as a substrate having the semiconductor thin film provided on the base material, a substrate for forming a color filter and a color filter using the substrate.

Claims

1. A method of forming a crystalline semiconductor thin film on a base material, comprising a step of:

applying UV-rays to an amorphous semiconductor thin film provided on a base material while keeping a temperature at not less than 25°

C. and not more than 300°

C. in a vacuum or a reducing gas atmosphere.

2. The method of forming a crystalline semiconductor thin film on a base material according to claim 1, wherein the reducing gas atmosphere contains a hydrogen gas.

3. The method of forming a crystalline semiconductor thin film on a base material according to claim 1, wherein the UV-rays are light from an excimer lamp.

4. The method of forming a crystalline semiconductor thin film on a base material according to claim 1, wherein the kept temperature is within a temperature range from 50°

C. to 250°

C.

5. The method of forming a crystalline semiconductor thin film on a base material according to claim 1, wherein the base material is a plastic base material and the kept temperature is within a temperature range, from 50°

C. to a heat resistant temperature of the plastic base material.

6. The method of forming a crystalline semiconductor thin film on a base material according to claim 5, wherein the heat resistant temperature of the plastic base material is from 100 to 230°

C.

7. The method of forming a crystalline semiconductor thin film on a base material according to claim 1, wherein the amorphous semiconductor thin film is an oxide semiconductor thin film.

8. The method of forming a crystalline semiconductor thin film on a base material according to claim 1, wherein the amorphous semiconductor thin film is a titanium oxide thin film formed by a sputtering method.

9. The method of forming a crystalline semiconductor thin film on a base material according to claim 1, wherein the crystalline semiconductor thin film is an anatase type titanium oxide thin film or a thin film comprising mixed crystals of anatase type titanium dioxide and rutile type titanium dioxide.

10. The method of forming a crystalline semiconductor thin film on a base material according to claim 1, wherein a transparent conductive thin film is disposed between the base material and the amorphous semiconductor thin film.

11. A lamination having at least a base material and a crystalline semiconductor thin film manufactured by a method comprising a step of:

applying UV-rays to an amorphous semiconductor thin film provided on a base material while keeping a temperature at not less than 25°

C. and not more than 300°

C. in a vacuum or a reducing gas atmosphere.

13. The lamination according to claim 11, wherein the base material is a plastic base material.

15. The lamination according to claim 14, wherein the crystalline semiconductor thin film is an anatase type titanium oxide thin film or a thin film comprising mixed crystals of anatase type titanium dioxide and rutile type titanium dioxide.

19. The method according to claim 18, wherein UV-rays are irradiated uniformly on the thin film.

20. The method according to claim 18, further comprising a step of:

keeping a temperature higher than a normal temperature during irradiation of the UV-rays.

12. The lamination having at least a base material, a transparent conductive thin film and a crystalline semiconductor thin film manufactured by a method comprising a step of:

applying UV-rays to an amorphous semiconductor thin film provided on a base material while keeping a temperature at not less than 25°

C. and not more than 300°

C. in a vacuum or a reducing gas atmosphere.

14. A lamination at least having a plastic base material and a crystalline semiconductor thin film.

16. A lamination at least having a plastic base material, a transparent conductive thin film and a crystalline semiconductor thin film in this order.

17. A color filter comprising:

a lamination at least having a plastic base material, a transparent conductive thin film and a crystalline semiconductor thin film in this order; and

a colored film formed on the lamination by a photo-electrodeposition method or a photocatalytic method.

18. A method of applying UV-rays to an amorphous metal oxide thin film disposed on a base material under a reduced pressure or in a reducing gas atmosphere, thereby changing the amorphous metal oxide into a crystalline metal oxide thin film.