Device for manufacturing semiconductor device and method of manufacturing the same
First Claim
1. A method of manufacturing a semiconductor device by using a clustered device for manufacturing the semiconductor device, comprising a plurality of processing rooms, a shared container enclosing a space containing the plurality of processing rooms such that the space is held in an atmosphere disconnected from an external space, and transporting means for transporting the wafer within the shared container, the method comprising the steps of:
- (a) forming a film on the wafer or removing a film from a surface of the wafer in one of the plurality of processing rooms; and
(b) determining the thickness of the film by optically evaluating a surface state of the wafer at any site in the shared container.
2 Assignments
0 Petitions
Accused Products
Abstract
There is provided a clustered device for manufacturing a semiconductor device in which a cleaning chamber, a rapid thermal processing chamber, an optical measurement chamber, and the like are arranged around a load-lock room. In an optical measurement system, there are disposed an exciting light source, a measuring light source, a light detector, a control/analyze system, and the like. During the formation of an oxide film, for example, a wafer is cleaned in the cleaning chamber and then the amount of a natural oxide film remaining on the wafer or the like is measured by optical modulation reflectance spectroscopy in the optical measurement chamber. Thereafter, the wafer is oxidized in the rapid thermal processing chamber. As a result, the surface of the wafer is prevented from being oxidized on exposure to an atmosphere and the surface state of the wafer can be monitored in the course of sequential process steps. By measuring the thickness of a film on a semiconductor region by optical evaluation in the clustered manufacturing device, the manufacturing process using the clustered device can be controlled.
22 Citations
7 Claims
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1. A method of manufacturing a semiconductor device by using a clustered device for manufacturing the semiconductor device, comprising a plurality of processing rooms, a shared container enclosing a space containing the plurality of processing rooms such that the space is held in an atmosphere disconnected from an external space, and transporting means for transporting the wafer within the shared container, the method comprising the steps of:
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(a) forming a film on the wafer or removing a film from a surface of the wafer in one of the plurality of processing rooms; and
(b) determining the thickness of the film by optically evaluating a surface state of the wafer at any site in the shared container. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification