STRUCTURE HAVING REDUCED LATERAL SPACER EROSION

  • US 20020146897A1
  • Filed: 03/31/2000
  • Published: 10/10/2002
  • Est. Priority Date: 12/22/1995
  • Status: Active Grant
First Claim
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1. A process for minimizing lateral spacer erosion on a contact region, said process comprising:

  • encapsulating a conducting layer in an insulating layer on said semiconductor body adjacent said contact region, wherein said insulating layer includes a substantially rectangular spacer portion adjacent said contact region;

    depositing an etch stop layer adjacent said insulating layer and adjacent said contact region; and

    etching a portion of said etch stop layer adjacent said contact region wherein said etching does not significantly erode said spacer portion of said insulating layer.

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