Low dielectric constant materials and their production and use
First Claim
1. A silica-based porous film-forming coating solution which includes a solution obtained by dissolving (A1) a compound represented by the general formula R1Si(OR)3 or R1SiX3 (where R1 is a methyl group or phenyl group, R is an alkyl group of 1-4 carbon atoms or a phenyl group, and X is a halogen element other than F) and (B1) a compound represented by the general formula R2R3Si(OR)2 or R2R3SiX2 (where R2 and R3 each is an alkyl group of 2 or more carbon atoms or a fluoro-substituted form thereof, or a methyl group or phenyl group, provided that at least one of R2 and R3 is an alkyl group of 2 or more carbon atoms or a fluoro-substituted form thereof, R is an alkyl group of 1-4 carbon atoms or a phenyl group, and X is a halogen element other than F) in an organic solvent followed by hydrolysis.
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Abstract
Silica-based low dielectric constant materials having three-dimensional network structures containing siloxane backbones which comprise Si04 tetrahedron structural units, as well as their production and use. The materials can be applied as interlayer dielectrics for semiconductor elements and the like.
27 Citations
8 Claims
- 1. A silica-based porous film-forming coating solution which includes a solution obtained by dissolving (A1) a compound represented by the general formula R1Si(OR)3 or R1SiX3 (where R1 is a methyl group or phenyl group, R is an alkyl group of 1-4 carbon atoms or a phenyl group, and X is a halogen element other than F) and (B1) a compound represented by the general formula R2R3Si(OR)2 or R2R3SiX2 (where R2 and R3 each is an alkyl group of 2 or more carbon atoms or a fluoro-substituted form thereof, or a methyl group or phenyl group, provided that at least one of R2 and R3 is an alkyl group of 2 or more carbon atoms or a fluoro-substituted form thereof, R is an alkyl group of 1-4 carbon atoms or a phenyl group, and X is a halogen element other than F) in an organic solvent followed by hydrolysis.
Specification