Method of manufacturing a semiconductor device
First Claim
1. A method of manufacturing a semiconductor devices comprising the steps of:
- forming a semiconductor layer on an insulating surface;
forming a gate insulating film on the semiconductor layer; and
forming a conductive layer on the gate insulating film, wherein the step of forming the gate insulating film is performed by a sputtering method using one of silicon and silicon oxide as a target and has a first stage for forming a first insulating film including mainly silicon, oxygen, and nitrogen and further including hydrogen at a concentration of 0.4 atomic % to 1.6 atomic % and a second stage for forming a second insulating film including mainly silicon and oxygen and further including hydrogen at a concentration of 0.2 atomic % or lower.
1 Assignment
0 Petitions
Accused Products
Abstract
A gate insulating film of a TFT is formed without increasing a substrate temperature so that a substrate having a low heat resistance such as a plastic substrate can be used. Further, a structure in which an S value of the above TFT is improved and an off leak current is reduced is used to realize the improvement of reliability of a semiconductor device. In the case where the gate insulating film is formed, it is formed by sputtering so that a region having 0.4 atomic % to 1.6 atomic % is present at concentration measurement of hydrogen in the film by an HFS analysis (hydrogen forward scattering analysis). Then, an insulating film is formed thereon by sputtering so that a region having 0.2 atomic % or less is present at concentration measurement of hydrogen in the film by an HFS analysis. When a TFT is manufactured using such a structure of the gate insulating film, there are obtained TFT characteristics such that a subthreshold coefficient is low and a leak current flowing between a gate electrode and a source electrode or a leak current flowing between a gate electrode and a drain electrode is suppressed.
18 Citations
27 Claims
-
1. A method of manufacturing a semiconductor devices comprising the steps of:
-
forming a semiconductor layer on an insulating surface;
forming a gate insulating film on the semiconductor layer; and
forming a conductive layer on the gate insulating film, wherein the step of forming the gate insulating film is performed by a sputtering method using one of silicon and silicon oxide as a target and has a first stage for forming a first insulating film including mainly silicon, oxygen, and nitrogen and further including hydrogen at a concentration of 0.4 atomic % to 1.6 atomic % and a second stage for forming a second insulating film including mainly silicon and oxygen and further including hydrogen at a concentration of 0.2 atomic % or lower. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method of manufacturing a semiconductor device, comprising the steps of:
-
forming a semiconductor layer on a plastic substrate;
forming a gate insulating film on the semiconductor layer; and
forming a conductive layer on the gate insulating film, wherein the step of forming the gate insulating film is performed by a sputtering method using one of silicon and silicon oxide as a target and has a first stage for forming a first insulating film including mainly silicon, oxygen, and nitrogen and further including hydrogen at a concentration of 0.4 atomic % to 1.6 atomic % and a second stage for forming a second insulating film including mainly silicon and oxygen and further including hydrogen at a concentration of 0.2 atomic % or lower. - View Dependent Claims (9, 10, 11, 12, 13, 14, 16, 17, 18, 19, 20, 21)
-
-
15. A method of manufacturing a semiconductor device, comprising the steps of:
-
forming a semiconductor layer on an insulating surface;
forming a first insulating film comprising silicon, oxygen, and nitrogen on the semiconductor layer by a sputtering method, said fist insulating film further including hydrogen;
forming a second insulating film comprising silicon, and oxygen by the sputtering method, said second insulating film further including hydrogen at a lower concentration than that of the first insulating film; and
forming a conductive layer on the first and second insulating films.
-
-
22. A semiconductor device comprising:
-
a semiconductor layer on an insulating surface;
a first insulating film comprising silicon, oxygen, and nitrogen on the semiconductor layer, said fist insulating film further including hydrogen;
a second insulating film comprising silicon, and oxygen, said second insulating film further including hydrogen at a lower concentration than that of the first insulating film; and
a conductive layer on the first and second insulating films. - View Dependent Claims (23, 24, 25, 26, 27)
-
Specification
-
- Resources
-
Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
InventorsIsobe, Atsuo, Takayama, Toru, Arao, Tatsuya, Koura, Akihiko
-
Granted Patent
-
Time in Patent OfficeDays
-
Field of Search
-
US Class Current438/151
-
CPC Class CodesH01L 27/12 the substrate being other t...H01L 27/1214 comprising a plurality of T...H01L 27/1259 Multistep manufacturing met...H01L 29/4908 for thin film semiconductor...H01L 29/66757 Lateral single gate single ...H01L 29/78603 characterised by the insula...
